Intersubband transition studies of Cd_0.936Zn_0.064Te/CdTe superlattices grown by double-well temperature-gradient vapor transport depositionCHUNG, I. H; HWANG, J.-S; CHUNG, C. H et al.Solid state communications. 1993, Vol 88, Num 1, pp 67-70, issn 0038-1098Article

Application of detectors based on the wide-gap semiconductors CdTe, CdZnTe, and GaAs for nuclear power plant safety monitoringAZHAZHA, V. M; KUTNII, V. E; RYBKA, A. V et al.Atomic energy (New York, N.Y.). 2002, Vol 92, Num 6, pp 508-513, issn 1063-4258, 6 p.Article

Optimisation des performances de détecteurs CdTe et CdZnTe en spectrométrie gamma = Performance optimization of CdTe and CdZnTe detectors for γ-spectrometryMontémont, Guillaume; Mohammad Djafari, Ali.2000, 169 p.Thesis

Investigation of deep levels in vanadium-doped CdTe and CdZnTeZERRAI, A; DAMMAK, M; MARRAKCHI, G et al.Journal of crystal growth. 1999, Vol 197, Num 3, pp 729-732, issn 0022-0248Conference Paper

Methods of dislocation distribution analysis and inclusion identification with application to CdTe and (Cd, Zn)TeROSET, D; DUROSE, K; PALOSZ, W et al.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 8, pp 1009-1016, issn 0022-3727Article

Structural defects and compositional uniformity in CdTe and Cd_1-xZn_xTe crystals grown by a vapour transport techniqueSZCZERBAKOW, A; DOMAGALA, J; ROSE, D et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 673-678, issn 0022-0248Article

Dislocation density reduction in CdZnTe(100) on GaAs using strained layer superlatticesRENO, J. L; CHADDA, S; MALLOY, K et al.Applied physics letters. 1993, Vol 63, Num 13, pp 1827-1829, issn 0003-6951Article

Interface roughness correlation in CdTe/CdZnTe strained quantum wellsPELEKANOS, N. T; BOUDET, N; EYMERY, J et al.Journal of crystal growth. 1998, Vol 184-85, pp 886-889, issn 0022-0248Conference Paper

Reconstruction, morphology, and stoichiometry of CdTe(001) and Cd_0.96Zn_0.04Te(001) surfacesNEUREITER, H; SPRANGER, S; SCHNEIDER, M et al.Surface science. 1997, Vol 388, Num 1-3, pp 186-200, issn 0039-6028Article

CdTe quantum wires achieved by strain-induced lateral confinementMARIETTE, H; BRINKMANN, D; FISHMAN, G et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 418-424, issn 0022-0248Conference Paper

Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBMCHIBANI, L; HAGE-ALI, M; SIFFERT, P et al.Journal of crystal growth. 1996, Vol 161, Num 1-4, pp 153-158, issn 0022-0248Conference Paper

Low-noise electronics for high-resolution CdZnTe and CdTe X-ray detection systemsNIEMELÄ, A.Journal de physique. IV. 1996, Vol 6, Num 4, pp C4.721-C4.731, issn 1155-4339Conference Paper

Growth of CdTe/CdZnTe strained-layer single quantum wells by modified hot-wall epitaxy method and their propertiesHWANG, J.-S; KOO, B. J; CHUNG, I. H et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 131-135, issn 0022-0248Conference Paper

Hard x-ray and gamma-ray detector physics V (San Diego CA, 4-5 August 2003)Franks, Larry A; Burger, Arnold; James, Ralph B et al.SPIE proceedings series. 2004, isbn 0-8194-5071-5, X, 352 p, isbn 0-8194-5071-5Conference Proceedings

CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectorsEISEN, Y; SHOR, A.Journal of crystal growth. 1998, Vol 184-85, pp 1302-1312, issn 0022-0248Conference Paper

Anisotropic center-of-mass quantization of excitons in CdTe/CdZnTe quantum wellsGOURGON, C; DAND, L. S; MARIETTE, H et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 537-541, issn 0022-0248Conference Paper

Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTeZAZVORKA, J; FRANC, J; MORAVEC, P et al.Applied surface science. 2014, Vol 315, pp 144-148, issn 0169-4332, 5 p.Article

Scanning tunneling microscopy and spectroscopy of the semi-insulating CdZnTe(110) surfaceEGAN, C. K; CHOUBEY, A; BRINKMAN, A. W et al.Surface science. 2010, Vol 604, Num 19-20, pp 1825-1831, issn 0039-6028, 7 p.Article

Semiconductor crystal optimization of gamma detectionLACHISH, Uri.Journal of crystal growth. 2001, Vol 225, Num 2-4, pp 114-117, issn 0022-0248Conference Paper

Comparison of CdTe, Cd_0.9Zn_0.1Te and CdTe_0.9Se_0.1 crystals : application for γ- and X-ray detectorsFIEDERLE, M; EBLING, D; EICHE, C et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 529-533, issn 0022-0248Conference Paper

Quantum confined Stark effect (QCSE) and self-electro-optic effect device (SEED) in II-VI heterostructuresHAAS, H; GENTILE, P; MAGNEA, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 224-227, issn 0921-5107Conference Paper

Results of a Si/CdTe compton telescopeOONUKI, Kousuke; TANAKA, Takaaki; WATANABE, Shin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59220J.1-59220J.11, issn 0277-786X, isbn 0-8194-5927-5, 1VolConference Paper

Photoluminescence properties of Z-bands in CdTeKRUSTOK, J; MÄDASSON, J; HIIE, J et al.Physica status solidi. A. Applied research. 1998, Vol 165, Num 2, pp 517-525, issn 0031-8965Article

Dopant precipitation in post-growth phosphorus-doped CdTeLOGINOV, YU. YU; BROWN, P. D; DUROSE, K et al.Inorganic materials. 1995, Vol 31, Num 9, pp 1079-1082, issn 0020-1685Article

Trapping parameters in evaporated CdTe thin films showing space-charge-limited conductivityISMAIL, B. B; GOULD, R. D.International journal of electronics. 1995, Vol 78, Num 2, pp 261-266, issn 0020-7217Conference Paper