Strains in Si-on-SiO₂ structures formed by oxygen implantation: Raman scattering characterizationOLEGO, D. J; BAUMGART, H; CELLER, G. K et al.Applied physics letters. 1988, Vol 52, Num 6, pp 483-485, issn 0003-6951Article

High-temperature stability of Si/SiO₂ interfaces and the influence of SiO flux on thermomigration of impurities in SiO₂CELLER, G. K; TRIMBLE, L. E.Applied physics letters. 1988, Vol 53, Num 25, pp 2492-2494, issn 0003-6951Article

Lateral epitaxial growth over oxideWILSON, L. O; CELLER, G. K.Journal of the Electrochemical Society. 1985, Vol 132, Num 11, pp 2748-2758, issn 0013-4651Article

Silicon-on-insulator technology and devices XI (Paris, 28 April - 2 May 2003)Celler, G; Fossum, J; Gamiz, F et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-375-X, XI, 522 p, isbn 1-56677-375-XConference Proceedings

Defects and electrical consequences in SOI buried oxidesHOVEL, H. J; ALMONTE, M; LEE, J. D et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Investigation of charge control related performances in double-gate SOI MOSFETsKILCHYTSKA, V; CHUNG, T. M; VAN MEER, H et al.Proceedings - Electrochemical Society. 2003, pp 225-230, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Comparative study of the dynamic performance of bulk and FDSOI mosfet by means of a Monte Carlo simulationRENGEL, R; PARDO, D; MARTIN, M. J et al.Proceedings - Electrochemical Society. 2003, pp 283-288, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Extraction of high frequency noise parameters of 0.25μm partially depleted silicon-on-insulator MOSFET: Impact of the high resistivity substrateDAVIOT, R; ROZEAU, O; CHOUTEAU, S et al.Proceedings - Electrochemical Society. 2003, pp 473-478, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Evidence for a linear kink effect in ultra-thin gate oxide SOI MOSFETsMERCHA, A; RAFI, J. M; SIMOEN, E et al.Proceedings - Electrochemical Society. 2003, pp 319-324, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

An accurate model for threshold voltage and S-factor of partially-depleted surrounding gate transistor (PD-SGT)YAMAMOTO, Yasue; HIOKI, Masakazu; NISHI, Ryohsuke et al.Proceedings - Electrochemical Society. 2003, pp 325-330, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Nature of high-temperature charge instability in fully depleted SOI MOSFETsNAZAROV, A. N; LYSENKO, V. S; COLINGE, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 455-460, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Saturation current model for the N-channel G⁴-FETDUFRENE, B; BLALOCK, B; CRISTOIOVEANU, S et al.Proceedings - Electrochemical Society. 2003, pp 367-372, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Status and future development of PDSOI MOSFETsKRISHNAN, Srinath.Proceedings - Electrochemical Society. 2003, pp 215-224, issn 0161-6374, isbn 1-56677-375-X, 10 p.Conference Paper

Emerging silicon-on-nothing (SON) devices technologySKOTNICKI, T; MONFRAY, S; FENOUILLET-BERANGER, C et al.Proceedings - Electrochemical Society. 2003, pp 133-148, issn 0161-6374, isbn 1-56677-375-X, 16 p.Conference Paper

Multi-fin double-gate mosfet fbricated by using (110)-oriented SOI wafers and orientation-dependent etchingLIU, Y. X; ISHII, K; TSUTSUMI, T et al.Proceedings - Electrochemical Society. 2003, pp 255-260, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Partially depleted SOI dynamic threshold MOSFET for low-voltage and microwave applicationsDEBAN, M; VANHOENACKER-JANVIER, D; RASKIN, J.-P et al.Proceedings - Electrochemical Society. 2003, pp 289-294, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Control of SEU in SOI SRAMs through carrier lifetime engineeringMITRA, S; IOANNOU, D. P; LIU, S. T et al.Proceedings - Electrochemical Society. 2003, pp 461-466, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Oxidation simulation of silicon nanostructures on silicon-on-insulator substratesUEMATSU, M; KAGESHIMA, H; SHIRAISHI, K et al.Proceedings - Electrochemical Society. 2003, pp 407-412, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Fully depleted SOI process and device technology for digital and RF applicationsICHIKAWA, F; NAGATOMO, Y; KATAKURA, Y et al.Proceedings - Electrochemical Society. 2003, pp 123-132, issn 0161-6374, isbn 1-56677-375-X, 10 p.Conference Paper

Changes in the parameters of silicon-on-insulator structures under irradiationANTONOVA, I. V; NIKOLAEV, D. V; NAUMOVA, O. V et al.Proceedings - Electrochemical Society. 2003, pp 505-510, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperaturesBELLODI, M; MARTINO, J. A.Proceedings - Electrochemical Society. 2003, pp 443-448, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

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Ultrathin SOI wafer fabrication and metrologyMALEVILLE, Christophe.Proceedings - Electrochemical Society. 2003, pp 33-44, issn 0161-6374, isbn 1-56677-375-X, 12 p.Conference Paper

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