Influence des résonances magnétiques d'impuretés sur la photoconductivité de Ge-pSHOVKUN, D. V.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1569-1573, issn 0015-3222Article

Hot photoluminescence in beryllium-doped gallium arsenideIMHOFF, E. A; BELL, M. I; FORMAN, R. A et al.Solid state communications. 1985, Vol 54, Num 10, pp 845-848, issn 0038-1098Article

Effect of iron impurities on the electrical proprerties of GaSe single crystalsTAGIYEV, B. G; NIFTIYEV, G. M; BASHIROV, S. M et al.Solid state communications. 1984, Vol 51, Num 11, pp 893-896, issn 0038-1098Article

Mixed dicationic and monocationic benzidine species in the proton-transfer compound of benzidine with 3,5-dinitrosalicylic acidSMITH, Graham; WERMUTH, Urs D; WHITE, Jonathan M et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, o402-o404, 7Article

Contact charging of ideal insulators: experiments on solidified rare gasesCOTTRELL, G. A; HATTO, C. E; REEDS, C et al.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 5, pp 989-1005, issn 0022-3727Article

Unusual conformations of 1,3-dialkoxythiacalix[4]arenes in the solid stateKASYAN, Oleg; THONDORF, Iris; BOLTE, Michael et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, o289-o294, 5Article

Effect of occupational sites of rare-earth elements on the Curie point in BaTiO₃KISHI, H; KOHZU, N; OZAKI, N et al.Proceedings - IEEE International Symposium on Applications of Ferroelectrics. 2002, pp 271-276, issn 1099-4734, isbn 0-7803-7414-2, 6 p.Conference Paper

Déplacement polaronique dans la théorie des accepteurs à niveau peu profond dans les semiconducteurs à bande dégénéréeGIFEJSMAN, SH. N; KOROPCHANU, V. P.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1853-1855, issn 0015-3222Article

Atomic deuterium passivation of boron acceptor levels in silicon crystalsMIKKELSEN, J. C. JR.Applied physics letters. 1985, Vol 46, Num 9, pp 882-884, issn 0003-6951Article

Spherical model of acceptor-associated bound magnetic polaronsWARNOCK, J; WOLFF, P. A.Physical review. B, Condensed matter. 1985, Vol 31, Num 10, pp 6579-6587, issn 0163-1829Article

Méthode des intégrales sur les trajectoires dans la théorie des bandes dégénéréesGIFEJSMAN, SH. N; PERLIN, YU. E.Fizika tverdogo tela. 1984, Vol 26, Num 9, pp 2760-2766, issn 0367-3294Article

ETATS FONDAMENTAUX D'UN COMPLEXE AD CHARGE POUR DIVERSES DISTANCES ENTRE LES CENTRESTOLPYGO EI; TOLPYGO KB; SHTAERMAN EH YA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 12; PP. 2256-2260; BIBL. 7 REF.Article

PHOTOIONIZATION OF GROUP-III ACCEPTORS IN SILICON.EDWARDS AH; FOWLER WB.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3613-3617; BIBL. 20 REF.Article

A NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON.BARON R; YOUNG MH; NEELAND JK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 11; PP. 594-596; BIBL. 18 REF.Article

ULTRASONIC ATTENUATION DUE TO THE NEUTRAL ACCEPTOR INDIUM IN SILICON.SCHAD H; LASSMANN K.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 56; NO 5; PP. 409-410; BIBL. 7 REF.Article

LES DIAMANTS SEMICONDUCTEURSVAVILOV VS; KONOROVA EA.1976; USP. FIZ. NAUK; S.S.S.R.; DA. 1976; VOL. 118; NO 4; PP. 611-639; BIBL. 2 P.Article

ELECTRONIC RAMAN SCATTERING BY GERMANIUM P-ACCEPTORS AND LUMINESCENCE IN GAAS.SCHEUERMANN W.1975; J. RAMAN SPECTROSC.; NETHERL.; DA. 1975; VOL. 3; NO 1; PP. 101-106; BIBL. 4 REF.Article

THE DEGENERACY FACTOR OF THE GOLD ACCEPTOR LEVEL IN SILICON.RALPH HI.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 672-675; BIBL. 14 REF.Article

HIGH RESOLUTION FOURIER TRANSFORM SPECTROSCOPY OF SHALLOW ACCEPTORS IN ULTRA-PURE GERMANIUM.HALLER EE; HANSEN WL.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 4; PP. 687-692; ABS. ALLEM.; BIBL. 20 REF.Article

PARTICULARITES DE LA RECOMBINAISON DANS LES MONOCRISTAUX DE CDSE PEU RESISTANTSLYUBCHENKO AV; BULAKH BM; GURINA IA et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 5; PP. 923-929; BIBL. 13 REF.Article

TEMPERATURE DEPENDENCE OF THE GOLD ACCEPTOR ENERGY LEVEL IN SILICON.ENGSTROM O; GRIMMEISS HG.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 7; PP. 413-415; BIBL. 9 REF.Article

MECANISME DE CREATION ET CINETIQUE DE LUMINESCENCE DES CENTRES IN²⁺ ET IN²⁺V_C^- DANS LE CRISTAL KCL-INNAGLI LE.1974; OPT. I SPEKTROSK.; S.S.S.R.; DA. 1974; VOL. 37; NO 5; PP. 949-953; BIBL. 9 REF.Article

Host-guest interaction in a thioureadimethyl oxalate (2/1) complex at 300 and 100 KCHITRA, R; ROUSSEL, Pascal; CHOUDHURY, R. R et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, o547-o549, 9Article

Quantification quasi classique des niveaux d'un accepteur dans les semi-conducteurs du type GeGEL'MONT, B. L; MIRLIN, A. D; PEREL, V. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 6, pp 1052-1057, issn 0015-3222Article

Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogenTHEWALT, M. L. W; LIGHTOWLERS, E. C; PANKOVE, J. I et al.Applied physics letters. 1985, Vol 46, Num 7, pp 689-691, issn 0003-6951Article