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Results 1 to 25 of 5163

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New unsymmetrical donor dimethyl(ethylenedioxy)tetraselenafulvalene (DMEDO-TSeF) : Structures and properties of its cation radical saltsSHIRAHATA, Takashi; KIBUNE, Megumi; IMAKUBO, Tatsuro et al.Journal of material chemistry. 2005, Vol 15, Num 41, pp 4399-4402, issn 0959-9428, 4 p.Article

Binding energy of a donor in a quantum-well heterostructureJAYAKUMAR, K; BALASUBRAMANIAN, S.Physical review. B, Condensed matter. 1985, Vol 32, Num 10, pp 6904-6906, issn 0163-1829Article

Nature of thermal donors in silicon crystalsSUEZAWA, M; SUMINO, K.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 235-242, issn 0031-8965Article

The energies of neutral donors in a weakly compensated classical impurity bandBUTCHER, P. N; COX, I. D; MCINNES, J. A et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 21, pp 3745-3752, issn 0022-3719Article

Energy spectra of donors in GaAs-Ga1-xAlxAs superlatticesZHENPENG LIU; DELU MA.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 15, pp 2757-2766, issn 0022-3719Article

Cinétique de formation des «seconds» centres donneurs de l'oxygène dans le siliciumBABITSKIJ, YU. M; GRINSHTEJN, P. M.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 4, pp 604-609, issn 0015-3222Article

Hydrogen-like excited states of a deep donor in germaniumGRIMMEISS, H. G; LARSSON, K; MONTELIUS, L et al.Solid state communications. 1985, Vol 54, Num 10, pp 863-865, issn 0038-1098Article

Comparison of copper imine and amine podates : geometric consequences of podand size and donor typeCOYLE, Joanne L; FULLER, Anna; MCKEE, Vickie et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, m472-m476, 10Article

Shallow states of donor impurity at the surface of isotropic semiconductorsTSIN-FU JIANG; YUEH SHAN.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 17, pp 3399-3406, issn 0022-3719Article

Absorption de la lumière due aux impuretés par les porteurs libres dans les semiconducteurs sans bande inerditeLENTSOV, A. A; YAKOVLEV, V. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 614-617, issn 0015-3222Article

Polyhedral building block with specific facial interaction for conducting supramolecular self-assemblyTANABE, Jun; TERAO, Hiroshi; MATSUSHITA, Michio M et al.Journal of material chemistry. 2004, Vol 14, Num 19, pp 2842-2847, issn 0959-9428, 6 p.Article

Elimination of persistent photo-conductivity and improvement in Si activation coefficient by Al spatial separation from Ga and Si in Al-Ga-As Si solid system. A novel short period AlAs/n-GaAs superlatticeBABA, T; MIZUTANI, T; OGAWA, M et al.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp L627-L629, issn 0021-4922Article

Magnetic polaron contribution to donor bound exciton in Cd1-xMnxSeHUBER, C. A; NURMIKKO, A. V; GAL, M et al.Solid state communications. 1983, Vol 46, Num 1, pp 41-43, issn 0038-1098Article

Donorlike excited states of the thermally induced 0.767-eV (P line) defect in oxygen-rich siliconWAGNER, J; DORNEN, A; SAUER, R et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5561-5564, issn 0163-1829Article

The effect of heat treatment on compensated CZ siliconBARANSKII, P. I; BABICH, V. M; BARAN, N. P et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 533-536, issn 0031-8965Article

High-resolution photothermal ionization spectroscopy of lithium-related shallow donors in germaniumDARKEN, L. S.Physical review. B, Condensed matter. 1983, Vol 27, Num 10, pp 6564-6567, issn 0163-1829Article

Dichloro[(1E,1'E)-1,1'-(pyridine-2,6-diyl)diethanone bis(O-methyloxime)-κ3N1,N2,N6]cobalt(II)ÖZDEMIR, Namik; DINCER, Muharrem; DAYAN, Osman et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, m398-m400, 9Article

On the thermal donors in siliconCORBETT, J. W; FRISCH, A. L; SNYDER, L. C et al.Materials letters (General ed.). 1984, Vol 2, Num 3, pp 209-210, issn 0167-577XArticle

Processus d'amplification et de génération de la lumière dans les cristaux d'halogénures alcalins à centres colorés donneursMEDVEDEV, B. A; PARSHKOV, O. M; SILKINA, T. G et al.Optika i spektroskopiâ. 1984, Vol 56, Num 3, pp 478-483, issn 0030-4034Article

Calcul des états d'impureté peu profonds et profonds dans Ge et Si par la méthode variationnelle de FeyhmanGERASIMOV, A. B; GOGUA, Z. G; TSERTSVADZE, A. A et al.Fizika tverdogo tela. 1983, Vol 25, Num 3, pp 746-750, issn 0367-3294Article

catend-poly[[(trifluoromethanesulfonato-κO)silver(I)]-μ-di-2-pyridylamine-κ2N2:N2'], a chain polymer with short Ag···C contactsJONES, Peter G; CRESPO, Olga; CONCEPCION GIMENO, M et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, m411-m412, 9Article

Electrical readout of a spin qubit without double occupancyGREENTREE, Andrew D; HAMILTON, A. R; HOLLENBERG, Lloyd C. L et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 11, pp 113310.1-113310.4, issn 1098-0121Article

New approach to the achievement of organic superconductivityYAMADA, Jun-Ichi.Journal of material chemistry. 2004, Vol 14, Num 20, pp 2951-2953, issn 0959-9428, 3 p.Article

Local distortions and volume changes in semiconductors: donors in siliconSTONEHAM, A. M; PAJOT, B; SCHOBER, H. R et al.Journal of physics. C. Solid state physics. 1988, Vol 21, Num 26, pp 4687-4692, issn 0022-3719Article

On occupation functions of donor- and acceptor-like interface states in metal-insulator-semiconductor tunnel structuresCHANG, C. Y; WANG, S. J.Solid-state electronics. 1985, Vol 28, Num 12, pp 1181-1191, issn 0038-1101Article

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