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Build-up of CaF2 thermoluminescence excited by high energy X-raysCOSTA, S; DELUNAS, A; MAXIA, V et al.Journal of luminescence. 1983, Vol 28, Num 2, pp 217-220, issn 0022-2313Article

Effet de la passivation thermique sur l'efficacité des cellules solaires polycristallines du siliciumBILYALOV, R. R; CHIRVA, V. P.Geliotehnika (Taškent). 1989, Num 1, pp 3-6, issn 0130-0997, 4 p.Article

The effect of doping by rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystalsABDINOV, A. Sh; BABAYEVA, R. F; RZAYEV, R. M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 299-303, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 5 p.Conference Paper

Vitesse de recombinaison par l'intermédiaire d'un centre à plusieurs niveaux (à plusieurs charges)EVSTROPOV, V. V; KISELEV, K. V; PETROVICH, I. L et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 902-912, issn 0015-3222Article

Explanation of positive and negative PICTS peaks in SI-GaAsSCHMERLER, S; HAHN, T; HAHN, S et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S328-S332, SUP1Conference Paper

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodesHADER, J; MOLONEY, J. V; KOCH, S. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7954, issn 0277-786X, isbn 978-0-8194-8491-8, 79540H.1-79540H.8Conference Paper

New exciton mechanism decreasing recombination lossesKARAZHANOV, S. ZH.Applied solar energy. 1995, Vol 31, Num 4, pp 25-32, issn 0003-701XArticle

Current-controlled negative resistance in ZrS2 single crystalsBARTWAL, K. S; SRIVASTAVA, O. N.Materials science & engineering. B, Solid-state materials for advanced technology. 1992, Vol 14, Num 2, pp L-11, -L13Article

Evaluation of the stopping depth of nonradiative recombination centers in Al0.5Ga0.5As by Ar+ ion beam sputtering by photoluminescence measurementsAKITA, K; TANEYA, M; SUGIMOTO, Y et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 4, pp 3274-3278, issn 0734-2101Article

Investigations of the dose-dependent anomalous fading rate of feldspar from sedimentsBO LI; LI, Sheng-Hua.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 22, issn 0022-3727, 225502.1-225502.15Article

Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentrationKHOLODNOV, Vyacheslav A; SEREBRENNIKOV, Pavel S.SPIE proceedings series. 2003, pp 352-356, isbn 0-8194-4986-5, 5 p.Conference Paper

Effect of the recombination function on the collection in a p-i-n solar cellHUBIN, J; SHAH, A. V.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1995, Vol 72, Num 6, pp 589-599, issn 1364-2812Article

Self-trapped-exciton formation by F,H center recombination in RbIBERZINA, B.Physica status solidi. B. Basic research. 1993, Vol 178, Num 1, pp K27-K29, issn 0370-1972Article

Mapping of the local minority carrier diffusion length in silicon wafersSTEMMER, M.Applied surface science. 1993, Vol 63, Num 1-4, pp 213-217, issn 0169-4332Conference Paper

Courant inverse et photocourant d'une jonction p-n ayant une concentration élevée de centres de recombinaisonAERYAN, L. V; SHIK, A. YA.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 4, pp 613-617, issn 0015-3222Article

Gigantic splash of the weak optical radiation gain in intrinsic threshold photoconductive devices (photoresistors) upon an increase in the concentration of recombination centersKHOLODNOV, V. A.SPIE proceedings series. 1999, pp 98-115, isbn 0-8194-3305-5Conference Paper

Specific features of concentrated radiation by polycrystalline solar cellsABDURAKHMANOV, B. M; ALIEV, R; BILYALOV, R. R et al.Applied solar energy. 1996, Vol 32, Num 1, pp 1-6, issn 0003-701XArticle

Recombinaison Auger dans le germanium fortement dopéKARPOVA, I. V; PEREL, V. I; SYROVEGIN, S. M et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 5, pp 826-831, issn 0015-3222Article

Blocking of recombination sites and photoassisted hydrogen evolution at surface-modified polycrystalline thin films of p-WSe2CABRERA, C. R; ABRUNA, H. D.Journal of physical chemistry (1952). 1985, Vol 89, Num 7, pp 1279-1285, issn 0022-3654Article

NON-RADIATIVE RECOMBINATION CENTERS IN GAAS0.6P0.4 RED LIGHT-EMITTING DIODES.FORBES L.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 635-640; BIBL. 21 REF.Article

OPTICAL AND TEMPERATURE QUENCHING OF PHOTOCURRENT IN ZINC SELENIDE SINGLE CRYSTALS.BIRCHAK I; SERDYUK VV; CHEMERESYUK GG et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 2; PP. K145-K149; BIBL. 8 REF.Article

ZUM NACHWEIS VON MINORITAETSTRAEGER-TRAPS IN HALBLEITERN = MISE EN EVIDENCE DES PIEGES DE PORTEURS MINORITAIRES DANS LES SEMI-CONDUCTEURSLEMKE H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 539-545; ABS. ENG; BIBL. 6 REF.Article

CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR. II. RECOMBINATION CENTERS IN THE SURFACE SPACE CHARGE LAYERSAH CT; FU HS.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 1; PP. 59-70; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

CARACTERISTIQUES DES CENTRES DE RECOMBINAISON DETERMINANT LA HAUTE SENSIBILITE DES PHOTORESISTANCES EN CDSB DE TYPE NMALYUTENKO VK.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 84-89; BIBL. 8 REF.Serial Issue

GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS.DUDECK I; KASSING R.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 1033-1036; BIBL. 11 REF.Article

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