Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

Diffusion des porteurs de déséquilibre dans le champ de centres profonds de capturePRIGODIN, V. N.ZETF. Pis′ma v redakciû. 1985, Vol 88, Num 3, pp 909-920, issn 0044-4510Article

Particularités de la caractéristique courant-tension lors d'une injection double dans les structures multicouches au silicium avec une base étroiteMNATSAKANOV, T. T; TUGUSHEVA, T. E.Radiotehnika i èlektronika. 1985, Vol 30, Num 1, pp 127-132, issn 0033-8494Article

Analysis of the decay of picosecond fluorescence in semiconductors. Criteria for the presumption of electroneutrality during the decay of an exponential electron-hole profileFELDBERG, S. W; EVENOR, M; HUPPERT, D et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 185, Num 2, pp 209-228, issn 0022-0728Article

High-field electron mobility and temperature in bulk semiconductorsARORA, V. K.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7297-7298, issn 0163-1829Article

Thermoluminescence governed by simultaneous thermal stimulation of electrons and holesCHEN, R; MATHUR, V. K; RHODES, J. F et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 361-369, issn 0370-1972Article

Analytic transformation of the generation-recombination centres in the transmission-line equivalent-circuit model of a semiconductorKWOK, C. Y.Electronics Letters. 1983, Vol 19, Num 22, pp 947-949, issn 0013-5194Article

Recombinaison d'impuretés dans un semiconducteur à bandes étroites avec excitation de phonons localisésDMITRIEV, A. V.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 12, pp 2222-2224, issn 0015-3222Article

Drift mobility, electron trapping, and diffusion-limited kinetics in sulfur-sensitized AgBr microcrystalsDERI, R. J; SPOONHOWER, J. P.Journal of applied physics. 1985, Vol 57, Num 8, pp 2806-2811, issn 0021-8979Article

Theory of transient currents in dielectrics at a limited level of single injection. II: The case of weak injectionBAGINSKII, I. L; KOSTSOV, E. G.Physica status solidi. A. Applied research. 1985, Vol 88, Num 2, pp 637-646, issn 0031-8965Article

A theoretical explanation of the carrier lifetime as a function of the injection level in gold-doped siliconABBAS, C. C.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 10, pp 1428-1432, issn 0018-9383Article

On the determination of carrier mobilities and densities in semi-insulating GaAsHRIVNAK, L.Physica status solidi. A. Applied research. 1983, Vol 80, Num 1, pp 317-323, issn 0031-8965Article

A theoretical study of the effects of interacting grain boundaries on electron-beam-induced currentsLUKE, K. L; VON ROOS, O.Journal of applied physics. 1984, Vol 55, Num 8, pp 2962-2966, issn 0021-8979Article

Self-consistent semi-classical dynamic theory of non-radiative capture and emission statistics in defect semiconductorsMANDELIS, A.Physica status solidi. B. Basic research. 1984, Vol 122, Num 2, pp 687-701, issn 0370-1972Article

Enhancement of Auger recombination in semiconductors by electron-hole plasma interactionsTAKESHIMA, M.Physical review. B, Condensed matter. 1983, Vol 28, Num 4, pp 2039-2048, issn 0163-1829Article

Electron-trap generation by recombination of electrons and holes in SiO₂CHEN, I. C; HOLLAND, S; HU, C et al.Journal of applied physics. 1987, Vol 61, Num 9, pp 4544-4548, issn 0021-8979Article

Hole trapping and interface state generation during bias-temperature stress of SiO₂ layersHAYWOOD, S. K; DE KEERSMAECKER, R. F.Applied physics letters. 1985, Vol 47, Num 4, pp 381-383, issn 0003-6951Article

Theory of geminate recombination as a molecular processRACKOVSKY, S; SCHER, H.Physical review letters. 1984, Vol 52, Num 6, pp 453-456, issn 0031-9007Article

Surface recombination statistics at trapsLANDSBERG, P. T; ABRAHAMS, M. S.Solid-state electronics. 1983, Vol 26, Num 9, pp 841-849, issn 0038-1101Article

Recombinaison des électrons dans les semiconducteurs sous l'effet de collisions ternairesESIPOV, S. EH; LARKIN, I. A.ZETF. Pis′ma v redakciû. 1985, Vol 89, Num 6, pp 2080-2091, issn 0044-4510Article

Double-carrier injection and recombination in insulators, including diffusion effectsTORPEY, P. A.Journal of applied physics. 1984, Vol 56, Num 8, pp 2284-2294, issn 0021-8979Article

Transport parameters in the n-type moderately doped region of silicon devices at 300 KVAN CONG, H; CHARAR, S; BRUNET, S et al.Physica status solidi. B. Basic research. 1983, Vol 117, Num 2, pp K61-K65, issn 0370-1972Article

Stability of generation-recombination induced dissipative structures in semiconductorsSCHÖLL, E.Zeitschrift für Physik. B, Condensed matter. 1983, Vol 52, Num 4, pp 321-334, issn 0722-3277Article

A model of trap-controlled recombination in disordered materialsARKHIPOV, V. I; POPOVA, J. A; RUDENKO, A. I et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1983, Vol 48, Num 5, pp 401-410, issn 0141-8637Article

Hg vacancy related lifetime in Hg_0.68Cd_0.32Te by optical modulation spectroscopyPOLLA, D. L; AGGARWAL, R. L; NELSON, D. A et al.Applied physics letters. 1983, Vol 43, Num 10, pp 941-943, issn 0003-6951Article