Double injection in solids with non-ohmic contacts. I: Solids without defectsKAO, K. C.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 7, pp 1433-1448, issn 0022-3727Article

Théorie des contacts n+-ν(p+-π) sur semiconducteurs compensésGREJSUKH, A. M; TSYRLIN, L. EH.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 398-401, issn 0015-3222Article

Le problème de l'injection d'un courant électrique dans un métal liquideYAVOJSKIJ, V. I; POVKH, I. L; KHANOV, V. K et al.Magnitnaâ gidrodinamika. 1984, Num 1, pp 139-140, issn 0025-0015Article

Non-linear stability bounds in electrohydrodynamicsRICHARDSON, A. T.Journal of electrostatics. 1984, Vol 15, Num 3, pp 343-349, issn 0304-3886Conference Paper

Propriétés photoélectriques de structures p+-ν-π-n+ épitaxiques d'arséniure de galliumVORONIN, S. T; KRAVCHENKO, A. F; SHERSTYAKOV, A. P et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 5, pp 787-791, issn 0015-3222Article

Charge injection into SiO₂ films at fields between 1 and 3 MV cm^-1 after electrical stressKRAUSE, H; BÄR, H.-P.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 537-547, issn 0031-8965Article

Double injection in solids with non-ohmic contacts. II: Solids with defectsKAO, K. C.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 7, pp 1449-1467, issn 0022-3727Article

Influence d'un flux hors d'équilibre de quasi-particules sur les propriétés de jonctions Josephson supraconducteur-métal normal-supraconducteurKAPLUNENKO, V. K; RYAZANOV, V. V; SHMIDT, V. V et al.ZETF. Pis′ma v redakciû. 1985, Vol 89, Num 4, pp 1389-1403, issn 0044-4510Article

Détermination des paramètres électrophysiques des domaines fortement dopés des structures p+-n-n+ à partir des valeurs des coefficients d'injection des jonctions émettricesGRIGOR'EV, B. I; TOGATOV, V. V.Radiotehnika i èlektronika. 1984, Vol 29, Num 9, pp 1810-1813, issn 0033-8494Article

Inverted top-emitting organic light-emitting diodes by whole device transferKIM, Kyung-Ho; HUH, Sung-Yoon; SEO, Soon-Min et al.Organic electronics. 2008, Vol 9, Num 6, pp 1118-1121, issn 1566-1199, 4 p.Article

Carrier transport and injection efficiency of InGaAsN quantum-well lasersYEH, Jeng-Ya; MAWST, Luke. J; TANSU, Nelson et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol2, 693-694Conference Paper

A novel light emitting device based on Si nanostructures and tunneling injection of carriersWONG, H; FILIP, V; CHU, P. L et al.International Vacuum Nanoelectronics Conference. 2004, pp 162-163, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper

Rigorous modeling of recombination under double injection in amorphous films : An example of the stiff problemSCHAUER, F; WEITER, M.The Journal of imaging science and technology. 1999, Vol 43, Num 5, pp 413-419, issn 1062-3701Article

Does tris-(8-hydroxyquinolinato) aluminum transport holes?LIN, L.-B; YOUNG, R. H; WEISS, D. S et al.SPIE proceedings series. 1997, pp 201-207, isbn 0-8194-2570-2Conference Paper

Bipolar transistor carrier-injected optical modulator/switch: proposal and analysisTADA, K; OKADA, Y.IEEE electron device letters. 1986, Vol 7, Num 11, pp 605-606, issn 0741-3106Article

Recombination-induced heating of free carriers in a semiconductorBIMBERG, D; MYCIELSKI, J.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5490-5493, issn 0163-1829Article

Conditioning effect of dielectric breakdown in liquid heliumKIM, S; TERAUCHI, M; YOSHINO, K et al.Japanese journal of applied physics. 1983, Vol 22, Num 6, pp 952-954, issn 0021-4922Article

Echauffement du plasma d'électrons-trous dans des hétérostructures doublesLUBASHEVSKIJ, I. A; RYZHIJ, V. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2031-2034, issn 0015-3222Article

Thermally stimulated spontaneous currents from Kapton polyimide-metal contactsBHARDWAJ, R. P; QUAMARA, J. K; NAGPAUL, K. K et al.Physica status solidi. A. Applied research. 1983, Vol 80, Num 1, pp 325-332, issn 0031-8965Article

Bipolar transistor base bandgap grading for minimum delayMCGREGOR, J. M; MANKU, T; ROULSTON, D. J et al.Solid-state electronics. 1991, Vol 34, Num 4, pp 421-422, issn 0038-1101, 2 p.Article

Open circuit voltage decay in p-n junction diodes at high levels of injectionJAIN, S. J; RAY, U. C; MURALIDHARAN, R et al.Solid-state electronics. 1986, Vol 29, Num 5, pp 561-570, issn 0038-1101Article

Caractéristiques courant-tension de structures à largeur de bande interdite variable avec double injectionARUTYUNYAN, V. M; DARBASYAN, A. T.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 5, pp 864-868, issn 0015-3222Article

Role of EHD motion in the electrical conduction of liquids in a blade-plane geometryHAIDARA, M; ATTEN, P.IEEE transactions on industry applications. 1985, Vol 21, Num 3, pp 709-714, issn 0093-9994Article

Hot carrier injection of photogenerated electrons at indium phosphide-electrolyte interfacesCOOPER, G; TURNER, J. A; PARKINSON, B. A et al.Journal of applied physics. 1983, Vol 54, Num 11, pp 6463-6473, issn 0021-8979Article

Impédance d'une diode longue pour la double injection de porteurs modifiant peu la quasi-neutralitéBLOKHIN, I. K; KHOLODNOV, V. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1761-1765, issn 0015-3222Article