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Results 1 to 25 of 7201

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Heterolayer mobility in the Block-Grüneisen rangePRICE, P. J.Solid state communications. 1984, Vol 51, Num 8, pp 607-608, issn 0038-1098Article

A MICROCOMPUTER BASED CONTROL SYSTEM FOR ANTENNA MEASUREMENTSPAPAIOANNOU D; LANGLEY RJ.1982; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1982 PUBL. 1983; VOL. 16; NO 5; PP. 394-396; BIBL. 1 REF.Article

AN EFFICIENT TECHNIQUE OF CHARACTERISING CALIBRATION GRIDS IN E-BEAM LITHOGRAPHY TOOLSMICHAIL MS.1982; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1982 PUBL. 1983; VOL. 16; NO 5; PP. 387-389; BIBL. 4 P.Article

TUNNELING IN TILTED SI INVERSION LAYERSMATHESON TG; HIGGINS RJ.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2633-2644; BIBL. 22 REF.Article

Analysis of the traveling-wave technique for measuring mobilities in low-conductivity semiconductorsFRITZSCHE, H.Physical review. B, Condensed matter. 1984, Vol 29, Num 12, pp 6672-6678, issn 0163-1829Article

Single longitudinal-mode optical phonon scattering in Ga0.47In0.53AsPEARSALL, T. P; CARLES, R; PORTAL, J. C et al.Applied physics letters. 1983, Vol 42, Num 5, pp 436-438, issn 0003-6951Article

Anisotropie de la mobilité des trous dans le tellureGORLEJ, P. N; KUSHNIR, N. YA.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2097-2098, issn 0015-3222Article

Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

Phonon-scattering-limited mobility in a quantum-well heterostructureARORA, V. K; NAEEM, A.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 3887-3892, issn 0163-1829Article

Instabilité de dérive dans les structures semiconductrices stratifiées périodiquesBULGAKOV, A. A; YAKOVENKO, V. M.Izvestiâ vysših učebnyh zavedenij. Radiofizika. 1984, Vol 27, Num 4, pp 518-522, issn 0021-3462Article

Influence de la polarisation des centres d'impureté sur la mobilité des porteurs dans des structures bidimensionnellesZON, B. A; KUPERSHMIDT, V. YA; SYSOEV, B. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 1, pp 140-142, issn 0015-3222Article

The reversal of drifting excess carriers in a amorphous silicon junctionSPEAR, W. E; STEEMERS, H. L.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1983, Vol 47, Num 6, pp L107-L112, issn 0141-8637Article

Isothermal transient current studies in cellulose acetate filmsASHOK KUMAR; RABINDER NATH.Journal of applied polymer science. 1983, Vol 28, Num 8, pp 2483-2489, issn 0021-8995Article

Carrier mobility determination in short-channel MOS devicesPETROVA, R. S; KAMBUROVA, R. S; NACHEV, I. S et al.Microelectronics. 1985, Vol 16, Num 6, pp 31-38, issn 0026-2692Article

Comment on Electron mobility in modulation-doped heterostructures. ResponsePRICE, P. J; WALUKIEWICZ, W; RUDA, H. E et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2643-2646, issn 0163-1829Article

Peak mobility of silicon metal-oxide-semiconductor systemsGOLD, A.Physical review letters. 1985, Vol 54, Num 10, pp 1079-1082, issn 0031-9007Article

ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA) AS/GAAS FETS AT CRYOGENIC TEMPERATURESDRUMMOND TJ; SU SL; LYONS WG et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1057-1058; BIBL. 8 REF.Article

A CAPACITIVE INSTRUMENT FOR THE MEASUREMENT OF MAGNETOSTRICTION IN PULSED FIELDSHEREMANS J; MICHENAUD JP; IYE Y et al.1982; JOURNAL OF PHYSICS E: SCIENTIFIC INSTRUMENTS; ISSN 0022-3735; GBR; DA. 1982 PUBL. 1983; VOL. 16; NO 5; PP. 382-386; BIBL. 12 REF.Article

Ballistic transport and properties of submicrometer silicon MOSFET's from 300 to 4.2 KROBERTSON, P. J; DUMIN, D. J.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 4, pp 494-498, issn 0018-9383Article

Mobility fluctuation 1/f noise in silicon p+-n-p transistorsKILMER, J; VAN DER ZIEL, A; BOSMAN, G et al.Solid-state electronics. 1985, Vol 28, Num 3, pp 287-288, issn 0038-1101Article

GaAs compensation by intense fluxes of low-energy particlesBITYURIN, YU. A; GAPONOV, S. V; KLYUENKOV, E. B et al.Solid state communications. 1983, Vol 45, Num 12, pp 997-999, issn 0038-1098Article

The thickness dependence of excess carrier lifetime and mobility in amorphous silicon junctionsSTEEMERS, H; SPEAR, W. E; LE COMBER, P. G et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1983, Vol 47, Num 5, pp L83-L88, issn 0141-8637Article

Low-energy implantation of arsenic in siliconKACHURIN, G. A; MAYER, V. A; ROMANOV, S. I et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp 475-480, issn 0031-8965Article

Photocatalytic hydrogen generation enhanced by band gap narrowing and improved charge carrier mobility in AgTaO3 by compensated co-dopingMIN LI; JUNYING ZHANG; WENQIANG DANG et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 38, pp 16220-16226, issn 1463-9076, 7 p.Article

Field-dependent grain boundary barriers as a cause of carrier drift velocity saturation in organic solidsSZYMANSKI, A.Journal of applied physics. 1985, Vol 58, Num 11, pp 4440-4441, issn 0021-8979Article

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