Electron-phonon scattering in superlatticesFRIEDMAN, L.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 955-961, issn 0163-1829Article

Electrons moving in a crystal weakly coupled to a random reservoirNOGUIEIRA, A. C. R.Journal of mathematical physics. 1984, Vol 25, Num 12, pp 3551-3557, issn 0022-2488Article

Diffusion noise of an electrokinetic transducerANTOKHIN, A. YU; KOZLOV, V. A; THOMAS, J. G et al.Technical physics. 1993, Vol 38, Num 7, pp 539-541, issn 1063-7842Article

Role of recombination and impact ionization in intervalley repopulation effectsMITIN, V. V.Solid state communications. 1985, Vol 55, Num 11, pp 997-1001, issn 0038-1098Article

Parallel computational techniques for simulating dopant diffusion in siliconBISWAS, R; AMARATUNGA, G. A. J.IEE proceedings. Part G. Electronic circuits and systems. 1989, Vol 136, Num 3, pp 135-137, issn 0143-7089, 3 p.Article

Calcul par le pseudopotentiel des potentiels de diffusion entre valléesGRINYAEV, S. N; KARAVEEV, G. F; TYUTEREV, V. G et al.Fizika tverdogo tela. 1988, Vol 30, Num 9, pp 2753-2756, issn 0367-3294Article

Carrier diffusion effects on quantum noise spectra in long wavelength BH lasersBROSSON, P; FERNIER, B; LECLERC, D et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 700-706, issn 0018-9197Article

Limits for the isotropy of the Mayadas-Shatzkes conduction modelPICHARD, C. R; BEDDA, M; TOSSER, A. J et al.Journal of materials science letters. 1984, Vol 3, Num 8, pp 743-744, issn 0261-8028Article

Nonstationary diffusion through arbitrary piecewise-linear potential profile. Exact solution and time characteristicsAGUDOV, N. V; MALAKHOV, A. N.Radiophysics and quantum electronics. 1993, Vol 36, Num 2, pp 97-109, issn 0033-8443Article

Streaming and inverse distribution of electrons at cyclotron parametric resonanceARONOV, I. E; BARANETZ, O. N; KANER, E. A et al.Solid state communications. 1985, Vol 55, Num 8, pp 695-700, issn 0038-1098Article

Relation d'Einstein dans les semiconducteurs dans les conditions d'une forte diffusion électron-trouMNATSAKANOV, T. T; ROSTOVTSEV, I. L; FILATOV, N. I et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 7, pp 1293-1296, issn 0015-3222Article

Théorie de la fuite transversale d'électrons chaudsKACHLISHVILI, Z. S; CHUMBURIDZE, F. G.ZETF. Pis′ma v redakciû. 1984, Vol 87, Num 5, pp 1834-1841, issn 0044-4510Article

Photoexcited carrier diffusion near a Si(111) surface and in the Si bulkLI, C. M; SJODIN, T; YING, Z. C et al.Applied surface science. 1996, Vol 104-05, pp 57-60, issn 0169-4332Conference Paper

Diffusion des porteurs de déséquilibre dans le champ de centres profonds de capturePRIGODIN, V. N.ZETF. Pis′ma v redakciû. 1985, Vol 88, Num 3, pp 909-920, issn 0044-4510Article

Role of potential scattering in the Shiba-Rusinov theory of magnetically doped superconductorsGINSBERG, D. M.Physical review. B, Condensed matter. 1984, Vol 29, Num 3, issn 0163-1829, 1439Article

Electrical transport properties of highly doped N-type GaN epilayersLEE, H. J; CHEONG, M. G; SUH, E.-K et al.SPIE proceedings series. 1998, pp 321-326, isbn 0-8194-2726-8Conference Paper

Perpendicular transport through rough interfaces in the metallic regimeBRATAAS, A; BAUER, G. E. W.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1239-1242, issn 0038-1101Conference Paper

Diffusion of delta doped boron in silicon following oxidationO'NEILL, A. G; BARLOW, R. D; BISWAS, R. G et al.Electronics Letters. 1993, Vol 29, Num 3, pp 263-264, issn 0013-5194Article

Elastic scattering of fast electrons in a real crystalBORGARDT, N. I; KIRSCH, S. G.Soviet physics. Crystallography. 1991, Vol 36, Num 3, pp 296-300, issn 0038-5638Article

Der Einfluss der Ladungsträger-Diffusion auf den Photowiderstand von optoelektronischen SchalternWEBER, N.AEU. Archiv für Elektronik und Übertragungstechnik. 1990, Vol 44, Num 4, pp 302-305, issn 0001-1096Article

Manifestation of carrier diffusion in coulomb blockade phenomenaNAZAROV, Y. V.Physics letters. A. 1990, Vol 147, Num 1, pp 81-83, issn 0375-9601Article

Anomalous transport in lattice and continuum percolating systemsYU, K. W.Physical review. B, Condensed matter. 1986, Vol 33, Num 11, pp 7748-7752, issn 0163-1829Article

Détermination de la durée de vie dans le volume et de la longueur de diffusion dans le semiconducteur de structures MISUSIKOV, V. D.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 939-941, issn 0015-3222Article

Positron diffusion in SiNIELSEN, B; LYNN, K. G; VEHANEN, A et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2296-2301, issn 0163-1829Article

Study of the Hall coefficient in p-type germanium taking into account anisotropic charge carrier scatteringGUTSUL, I. V; KIRNAS, I. G; LITOVCHENKO, P. G et al.Physica status solidi. B. Basic research. 1985, Vol 128, Num 2, pp 753-759, issn 0370-1972Article