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Determination of trapped charge distributions in the dielectric of a metal-oxide-semiconductor structurePRZEWLOCKI, H. M.Journal of applied physics. 1985, Vol 57, Num 12, pp 5359-5366, issn 0021-8979Article

Individual oxide traps as probes into submicron devicesRESTLE, P.Applied physics letters. 1988, Vol 53, Num 19, pp 1862-1864, issn 0003-6951Article

Temperature dependence of electron trapping in metal-oxide-semiconductor devices as a function of the injection modeGILDENBLAT, G. S; HUANG, C.-L; GROT, S. A et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 2150-2152, issn 0021-8979Article

The statistics of electron trapping processes in microcrystals of silver halidesMITCHELL, J. W.Journal of Photographic Science. 1983, Vol 31, Num 6, pp 227-234, issn 0022-3638Article

Kinetics of trapping, detrapping, and trap generationWILLIAMS, C. K.Journal of electronic materials. 1992, Vol 21, Num 7, pp 711-720, issn 0361-5235Article

Trapping parameters from isothermal decay of TL: extension of the modelMOHARIL, S. V.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 1, pp 179-183, issn 0022-3727Article

Influence of sintering temperature on intrinsic trapping in zinc oxide-based varistorsSLETSON, L. C; POTTER, M. E; ALIM, M. A et al.Journal of the American Ceramic Society. 1988, Vol 71, Num 11, pp 909-913, issn 0002-7820Conference Paper

Hole trapping and breakdown in thin SiO₂CHEN, I. C; HOLLAND, S; HU, C et al.IEEE electron device letters. 1986, Vol 7, Num 3, pp 164-167, issn 0741-3106Article

Nature of electron and hole traps in MOS systems with poly-Si electrodeASLAM, M; SINGH, R; BALK, P et al.Physica status solidi. A. Applied research. 1984, Vol 84, Num 2, pp 659-668, issn 0031-8965Article

Diffusion des porteurs de déséquilibre dans le champ de centres profonds de capturePRIGODIN, V. N.ZETF. Pis′ma v redakciû. 1985, Vol 88, Num 3, pp 909-920, issn 0044-4510Article

Quelques singularités de la caractéristique courant-tension d'une structure p+-π-p+LUK'YANCHENKO, A. I; ORESHKIN, G. I; FETISOV, E. A et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 874-877, issn 0015-3222Article

EVIDENCE FOR THE CREATION OF THE MAIN ELECTRON TRAP IN BULK GAASMARTIN GM; TERRIAC P; MAKRAM EBEID S et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 61-63; BIBL. 15 REF.Article

A THEORETICAL APPROACH TO EXCITON TRAPPING IN SYSTEMS WITH ARBITRARY TRAP CONCENTRATIONKENKRE VM.1982; CHEMICAL PHYSICS LETTERS; ISSN 0009-2614; NLD; DA. 1982; VOL. 93; NO 3; PP. 260-263; BIBL. 11 REF.Article

EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDELAI SK; DONG DW; HARTSTEIN A et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2042-2044; BIBL. 14 REF.Article

RELATION BETWEEN CR-LEVEL AND MAIN ELECTRON TRAP (EL2) IN BOAT-GROWN BULK GAASHASEGAWA F; IWATA N; NANNICHI Y et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1479-1484; BIBL. 36 REF.Article

ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO₂ LAYERSDE KEERSMAECKER RF; DI MARIA DJ.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1085-1101; BIBL. 47 REF.Article

MODEL OF BACKSURFACE GETTERING OF METAL IMPURITIES IN SILICONVENGURLEKAR AS.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 830-832; BIBL. 13 REF.Article

RANDOM-WALK STUDIES OF EXCITATION TRAPPING IN CRYSTALSZUMOFEN G; BLUMEN A.1982; CHEM. PHYS. LETT.; ISSN 0009-2614; NLD; DA. 1982; VOL. 88; NO 1; PP. 63-67; BIBL. 24 REF.Article

A new evaluation technique for analyzing the thermoluminescence glow curve and calculating the trap parametersRASHEEDY, M. S.Thermochimica acta. 2005, Vol 429, Num 2, pp 143-147, issn 0040-6031, 5 p.Article

Charge carrier dipole traps in neat molecular crystals of polar moleculesSKRYSHEVSKI, Yu; OSTAPENKO, N; KADASHCHUK, A et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1998, Vol 324, pp 101-106, issn 1058-725XConference Paper

Trap emptying time in LT CdTe films determined by Time Resolved Reflectance near Brewster's angleBREUIL, N; GHIS, A; REINEIX, A et al.SPIE proceedings series. 1998, pp 348-356, isbn 0-8194-2920-1Conference Paper

Study of carrier trapping in stacked dielectricsNOZAKI, S; GIRIDHAR, R. V.IEEE electron device letters. 1986, Vol EDL-7, Num 8, pp 486-489, issn 0741-3106Article

Trap controlled hopping in one-dimensional systemsPRIGODIN, V. N; SEIDEL, C; NAKHMEDOV, A. P et al.Solid state communications. 1985, Vol 53, Num 5, pp 451-455, issn 0038-1098Article

Thermal energy depth of electron traps in the SiO₂ layer of the ion-implanted MOS structureMARCZEWSKI, M; STRZALKOWSKI, I; KOWALSKI, M et al.Solid state communications. 1984, Vol 49, Num 10, pp 977-979, issn 0038-1098Article