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Results 1 to 25 of 376

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Optimization of CCD fabrication process for space applicationASIAM, S; DAS, N. C; JHABVALA, M et al.SPIE proceedings series. 1998, pp 588-591, isbn 0-8194-2756-X, 2VolConference Paper

An automatic light spectrum compensation method for CCD white balance measurementQIAN, D; TOKER, J; BENCUYA, S et al.IEEE transactions on consumer electronics. 1997, Vol 43, Num 2, pp 216-220, issn 0098-3063Article

A comparative study of two-phase and uni-phase GaAs cermet-gate CCDsCHEN, L; KWOK, H. L.International journal of electronics. 1995, Vol 79, Num 1, pp 25-32, issn 0020-7217Article

A high-packing density pixel with punchtrough read-out method for an HDTV interline CCDOZAKI, T; ONO, H; TANAKA, H et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 7, pp 1128-1135, issn 0018-9383Article

Theoretical and experimental study of photoelectric characteristics of the two-channel bulk charge-coupled deviceKHAINOVSKII, V. I; UZDOVSKII, V. V.Optical engineering (Bellingham. Print). 1994, Vol 33, Num 7, pp 2352-2356, issn 0091-3286Article

Analysis of the transmission characteristics of a photodiode-reader system employing charge-coupled devicesKUNAKBAYEVA, G. P; LI, I. I; CHEREPOV, Y. I et al.Journal of communications technology & electronics. 1993, Vol 38, Num 13, pp 94-102, issn 1064-2269Article

Buried channel charge-coupled device on gas-source MBE grown InPHAN, K. Y; IYER, R; HAFICH, M et al.Electronics Letters. 1992, Vol 28, Num 19, pp 1795-1796, issn 0013-5194Article

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiencyHOENK, M. E; GRUNTHANER, P. J; GRUNTHANER, F. J et al.Applied physics letters. 1992, Vol 61, Num 9, pp 1084-1086, issn 0003-6951Article

Bleaching effect of illumination on the vertical hot-electron transportGEIM, A. K; BENDING, S. J; GUERET, P et al.Superlattices and microstructures. 1992, Vol 12, Num 2, pp 247-250, issn 0749-6036Article

Transient analysis of signal charge transfer in long diffused regions of spectroscopic image sensorsDOBSON, D. A.. B; CHAMBERLAIN, S. G.Canadian journal of physics (Print). 1992, Vol 70, Num 10-11, pp 1086-1091, issn 0008-4204Conference Paper

Dynamic suppression of interface-state dark current in buried-channel CCD'sBURKE, B. E; GAJAR, S. A.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 2, pp 285-290, issn 0018-9383, 6 p.Article

CCD-on chip amplifiers : noise performance versus MOS transistor dimensionsCENTEN, P.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 5, pp 1206-1216, issn 0018-9383Article

Multidimensional augmented current equation including velocity oveshootKAN, E. C; RAVAIOLI, U; CHEN, D et al.IEEE electron device letters. 1991, Vol 12, Num 8, pp 419-421, issn 0741-3106Article

A novel trench-defined MISIM CCD structure for X-ray imaging and other applicationsFOSSUM, E. R.IEEE electron device letters. 1989, Vol 10, Num 5, pp 177-179, issn 0741-3106Article

A two-dimensional numerical approach to achieve a silicon BCCD cell optimal designCARQUET, M; RIGAUD, D; TOUBOUL, A et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 9, pp 1445-1455, issn 0018-9383Article

Counting of deep-level traps using a charge-coupled deviceMCGRATH, R. D; DOTY, J; LUPINO, G et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 12, pp 2555-2557, issn 0018-9383Article

Les dispositifs à transfert de charge en arséniure de gallium : conception et réalisationBesnard, Véronique; Rocchi, Marc.1987, 144 p.Thesis

Characterization of dark current non-uniformities in charge-coupled devicesVAN DER SPIEGEL, J; DECLERCK, G. J.Solid-state electronics. 1984, Vol 27, Num 2, pp 147-154, issn 0038-1101Article

Dunkelströme in n-Kanal-Volumen CCD = Courants d'obscurité dans un dispositif à transfert de charges à canal n = Dark currents in n channel CCDEIGLER, H; DONTH, H.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 5, pp 176-177, issn 0323-4657Article

Novel real-space hot-electron transfer devicesKASTALSKY, A; LURYI, S.IEEE electron device letters. 1983, Vol 4, Num 9, pp 334-336, issn 0741-3106Article

Proton radiation damage in high-resistivity n-type silicon CCDsBEBEK, C. J; GROOM, D. E; WAGNER, M. T et al.SPIE proceedings series. 2002, pp 161-171, isbn 0-8194-4409-XConference Paper

Multi-spectral CCD camera system for ocean water color and seacoast observationZHU MIN; CHEN SHIPING; WU YANLIN et al.SPIE proceedings series. 2001, pp 153-159, isbn 0-8194-4341-7Conference Paper

Carrier reset operation in charge modulation deviceNOMOTO, T; MATSUMOTO, K; NAKAMURA, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp 3754-3759, issn 0021-4922, 1Article

A simplified and efficient numerical model for charge injection in acoustic charge transport devicesKNAPP, S. M; MALOCHA, D. C; LIOU, J. J et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 8, pp 1811-1820, issn 0018-9383Article

CCD focal-plane image reorganization processors for lossless image compressionKEMENY, S. E; TORBEY, H. H; MEADOWS, H. E et al.IEEE journal of solid-state circuits. 1992, Vol 27, Num 3, pp 398-405, issn 0018-9200Article

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