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Recent progress in multi-wafer CBE systemsANDO, H.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 16-22, issn 0022-0248Conference Paper

Pyrolysis of tertiarybutylphosphine at low pressureHILL, C. W; STRINGFELLOW, G. B; SADWICK, L. P et al.Journal of electronic materials. 1995, Vol 24, Num 6, pp 731-734, issn 0361-5235Article

Interrupted cycle chemical beam epitaxy of gallium phosphide on silicon with or without photon assistanceKELLIHER, J. T; MILLER, A. E; DIETZ, N et al.Applied surface science. 1995, Vol 86, Num 1-4, pp 453-456, issn 0169-4332Conference Paper

1.3 μm decoupled confinement heterostructure lasers grown by chemical beam epitaxyHAUSSER, S; HARDER, C. S; MEIER, H. P et al.Applied physics letters. 1993, Vol 62, Num 7, pp 663-665, issn 0003-6951Article

Quantum well electroabsorption modulators at 1.55 μm using single-step selective area chemical beam epitaxial growthCHEN, Y; ZUCKER, J. E; CHIU, T. H et al.Applied physics letters. 1992, Vol 61, Num 1, pp 10-12, issn 0003-6951Article

Growth and in situ ellipsometric analysis of Si_1-xGe_x alloys deposited by chemical beam epitaxyBOUCAUD, P; GLOWACKI, F; CAMPIDELLI, Y et al.Journal of electronic materials. 1994, Vol 23, Num 6, pp 565-568, issn 0361-5235Article

Advances in the understanding of chemical beam epitaxy growth mechanismsMARTIN, T; FREER, R. W; WHITEHOUSE, C. R et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 69-77, issn 0022-0248Conference Paper

Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgalliumSEONG-JU PARK; JEONG-RAE RO; JAE-KI SIM et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 143-147, issn 0022-0248Conference Paper

Model for reflection high-energy electron diffraction intensity recovery during GaP growth in laser-triggered chemical beam epitaxyVACCARO, P; HASHIMOTO, T; YOSHIMOTO, M et al.Applied physics letters. 1993, Vol 63, Num 26, pp 3601-3603, issn 0003-6951Article

Selective epitaxy of GaAs on indium oxide mask followed by in situ removal of the maskOZASA, K; TIANCHUN YE; AOYAGI, Y et al.Applied physics letters. 1993, Vol 63, Num 12, pp 1634-1636, issn 0003-6951Article

Growth of epitaxial (100) GaAs films using the single-source precursor [Me₂Ga(μ-t-Bu₂As)]₂MILLER, J. E; EKERDT, J. G.Chemistry of materials. 1992, Vol 4, Num 1, pp 7-9, issn 0897-4756Article

Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxyARMSTRONG, J. V; FARRELL, T; BOYD, A et al.Applied physics letters. 1992, Vol 61, Num 23, pp 2770-2772, issn 0003-6951Article

Selective area epitaxy and growth over patterned substrates by chemical beam epitaxyTSANG, W. T; YANG, L; WU, M. C et al.Electronics Letters. 1991, Vol 27, Num 1, pp 3-5, issn 0013-5194, 3 p.Article

In-situ reflection high-energy electron diffraction observation of laser-triggered GaP growth in chemical beam epitaxyYOSHIMOTO, M; HASHIMOTO, T; VACCARO, P et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 89-93, issn 0022-0248Conference Paper

Low-threshold InGaAs strained-layer quantum wells lasers (λ-0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxyTSANG, W. T; KAPRE, R; WU, M. C et al.Applied physics letters. 1992, Vol 61, Num 7, pp 755-757, issn 0003-6951Article

Doping studies using thermal beams in chemical-beam epitaxyTSANG, W. T; TELL, B; DITZENBERGER, J. A et al.Journal of applied physics. 1986, Vol 60, Num 12, pp 4182-4185, issn 0021-8979Article

Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditionsDIETZ, N; ROSSOW, U; ASPNES, D. E et al.Applied surface science. 1996, Vol 102, pp 47-51, issn 0169-4332Conference Paper

Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)ABERNATHY, C. R.Materials science & engineering. R, Reports. 1995, Vol 14, Num 5, pp 203-254, issn 0927-796XArticle

Influence of hydrogen radicals on the reduction of carbon incorporation into chemical beam epitaxial GaAsGOTO, S; NOMURA, Y; MORISHITA, Y et al.Journal of crystal growth. 1994, Vol 144, Num 3-4, pp 126-132, issn 0022-0248Article

In-situ RHEED observation on surface reactions in laser-triggered chemical beam epitaxy of GaPYOSHIMOTO, M; HASHIMOTO, T; VACCARO, P et al.Applied surface science. 1994, Vol 79-80, Num 1-4, pp 227-231, issn 0169-4332Conference Paper

Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethaneCHIN, A; UTPAL DAS et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 847-850, issn 1071-1023Conference Paper

Growth of high-purity InP by chemical beam epitaxySUDERSENA RAO, T; LACELLE, C; ROTH, A. P et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 840-842, issn 1071-1023Conference Paper

34 GHz bandwidth GaAs high-speed Schottky barrier photodiode fabricated by chemical-beam epitaxySEKIGUCHI, Y; KUWAHARA, T; KOBAYASHI, F et al.Japanese journal of applied physics. 1992, Vol 31, Num 2B, pp L180-L182, issn 0021-4922, 2Article

GaInAsP/InP surface emitting lasers grown by chemical beam epitaxyUCHIDA, T; YOKOUCHI, N; MIYAMOTO, T et al.Electronics Letters. 1992, Vol 28, Num 6, pp 550-551, issn 0013-5194Article