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A simple EDXRF technique to analyse alloysMANDAL, A. C; SARKAR, M; BHATTACHARYA, D et al.EPJ. Applied physics (Print). 2002, Vol 17, Num 1, pp 81-84, issn 1286-0042Article

Electron flood gun damage in the analysis of polymers and organics in time-of-flight SIMSGILMORE, I. S; SEAH, M. P.Applied surface science. 2002, Vol 187, Num 1-2, pp 89-100, issn 0169-4332Article

Laser ablation and time-of-flight mass-spectrometric study of SiOTORRES, Ricardo; MARTIN, Margarita.Applied surface science. 2002, Vol 193, Num 1-4, pp 149-155, issn 0169-4332Article

Use of spin-coated TXRF reference samples for ToF-SIMS metal contaminant quantification on silicon wafersLAZZERI, Paolo; LUI, Alberto; MORO, Lorenza et al.Surface and interface analysis. 2000, Vol 29, Num 11, pp 798-803, issn 0142-2421Article

Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin filmsMOON, D. W; KIM, K. J; PARK, Y et al.Surface and interface analysis. 2000, Vol 30, Num 1, pp 484-487, issn 0142-2421Conference Paper

Compositional analysis of amorphous SiN_x:H films by ERDA and infrared spectroscopyBOHNE, W; FUHS, W; RÖHRICH, J et al.Surface and interface analysis. 2000, Vol 30, Num 1, pp 534-537, issn 0142-2421Conference Paper

Quantitative TOF-SIMS analysis of metal contamination on silicon wafersZANDERIGO, F; FERRARI, S; QUEIROLO, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 73, Num 1-3, pp 173-177, issn 0921-5107Conference Paper

Influence of argon pressure on the depth resolution during GDOES depth profiling analysis of thin filmsSHIMIZU, K; HABAZAKI, H; SKELDON, P et al.Surface and interface analysis. 2000, Vol 29, Num 2, pp 155-159, issn 0142-2421Article

Quantitative AES analysis and preferential sputtering of titanium silicide thin filmsPALACIO, C.Surface and interface analysis. 1999, Vol 27, Num 12, pp 1092-1097, issn 0142-2421Article

Temporal and spatial resolution of scattered and recoiled atoms for surface elemental and structural analysisRABALAIS, J. W.Surface and interface analysis. 1999, Vol 27, Num 4, pp 171-178, issn 0142-2421Conference Paper

SIMS depth profiling of TiO_xN_y filmsMETSON, J. B; PRINCE, K. E.Surface and interface analysis. 1999, Vol 28, Num 1, pp 159-162, issn 0142-2421Conference Paper

Determination of the concentration of surface hydroxyl groups on metal oxide films by a quantitative XPS methodMCCAFFERTY, E; WIGHTMAN, J. P.Surface and interface analysis. 1998, Vol 26, Num 8, pp 549-564, issn 0142-2421Article

Quantitative secondary ion mass spectrometry analysis of the native oxide on silicon wafersYAMAZAKI, H; TAKAHASHI, M.Surface and interface analysis. 1997, Vol 25, Num 12, pp 937-941, issn 0142-2421Article

Towards a 'universal curve' for total electron-yield XASSCHROEDER, S. L. M.Solid state communications. 1996, Vol 98, Num 5, pp 405-409, issn 0038-1098Article

SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substratesYEO, K. L; WEE, A. T. S; LIU, R et al.Surface and interface analysis. 2002, Vol 33, Num 5, pp 373-375, issn 0142-2421Article

Quantitative AES depth profiling of iron and chromium oxides in solid solution, (Cr_1-xFe_x)₂O₃ASTEMAN, H; NORLING, R; SVENSSON, J.-E et al.Surface and interface analysis. 2002, Vol 34, Num 1, pp 234-238, issn 0142-2421Conference Paper

AES and SAM microanalysis of structure ceramics by thinning and coating the backsideLING YU; DELING JIN.Surface and interface analysis. 2001, Vol 31, Num 4, pp 338-342, issn 0142-2421Article

SIMS quantification of Si_1-xGe_x alloys using polyatomic secondary ionsGUI DONG; CHA LIANGZHEN; LIU RONG et al.Surface and interface analysis. 2001, Vol 32, Num 1, pp 171-174, issn 0142-2421Conference Paper

Glow discharge optical emission spectrometry (GDOES) depth profiling analysis of anodic alumina Film: a depth resolution studySHIMIZU, K; BROWN, G. M; HABAZAKI, H et al.Surface and interface analysis. 1999, Vol 27, Num 1, pp 24-28, issn 0142-2421Article

Broadening the horizons of SIMS : the low cost Chemical MicroscopeECCLES, A. J; STEELE, T. A; ROBINSON, A. W et al.Applied surface science. 1999, Vol 144-45, pp 106-112, issn 0169-4332Conference Paper

Pin point depth profiling for unit device or several nano-devicesMAEKAWA, Ayaka; YAMAMOTO, Takeshi; ISHIZAKI, Yasuhiro et al.Surface and interface analysis. 2006, Vol 38, Num 12-13, pp 1747-1750, issn 0142-2421, 4 p.Conference Paper

Development of ultrahigh vacuum floating-type low-energy ion gun with differential pumping facilities for high-resolution depth profilingMIZUHARA, Y; BUNGO, T; NAGATOMI, T et al.Surface and interface analysis. 2005, Vol 37, Num 2, pp 171-175, issn 0142-2421, 5 p.Conference Paper

Erosion rate variations during XPS sputter depth profiling of nanoporous filmsGASPAR, Daniel J; ENGELHARD, Mark H; HENRY, Matthew C et al.Surface and interface analysis. 2005, Vol 37, Num 4, pp 417-423, issn 0142-2421, 7 p.Conference Paper

Characterization of oxygen impurities in thermally evaporated LaF₃ thin films suitable for oxygen sensorVIJAYAKUMAR, M; SELVASEKARAPANDIAN, S; GNANASEKARAN, T et al.Applied surface science. 2004, Vol 222, Num 1-4, pp 125-130, issn 0169-4332, 6 p.Article