Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Chemical diffusion")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 2860

  • Page / 115

Export

Selection :

  • and

Determination of nitroester and stabilizer migration in combustible cartridge case wallHO, C.-H; TOMKINS, B. A; RAMSEY, R. S et al.Propellants, explosives, pyrotechnics. 1996, Vol 21, Num 2, pp 79-84, issn 0721-3115Article

Diffuse interface model of diffusion-limited crystal growthCOLLINS, J. B; LEVINE, H.Physical review. B, Condensed matter. 1985, Vol 31, Num 9, pp 6119-6122, issn 0163-1829Article

Experimental determination of chemical diffusion within secondary organic aerosol particlesABRAMSON, Evan; IMRE, Dan; BERANEK, Josef et al.PCCP. Physical chemistry chemical physics (Print). 2013, Vol 15, Num 8, pp 2983-2991, issn 1463-9076, 9 p.Article

Quantum yield of a two-site proton diffusion model : suggestions for dominant uncoupling processes in cytochrome oxidaseARRECIS, J. J; KUNDU, K; PHILLIPS, P et al.Journal of physical chemistry (1952). 1990, Vol 94, Num 18, pp 7316-7321, issn 0022-3654Article

Interdiffusion profiles of AuGe/n-GaAs ohmic contacts studied by AESJUNG, T; NEBAUER, E.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K203-K206, issn 0031-8965Article

Interstitial kinetics near oxidizing silicon interfacesDUNHAM, S. T.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 250-254, issn 0013-4651, 5 p.Article

Rôle de la diffusion par les limites des phases solides dans la cristallisation eutectiqueTEMKIN, D. E.Kristallografiâ. 1986, Vol 31, Num 1, pp 12-22, issn 0023-4761Article

Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxyMAXEY, C. D; CAPPER, P; WHIFFIN, P. A. C et al.Materials letters (General ed.). 1989, Vol 8, Num 9, pp 385-388, issn 0167-577X, 4 p.Article

Interface deformation due to a quench: solid caseONUKI, A; SEKIMOTO, K; JASNOW, D et al.Progress of theoretical physics. 1985, Vol 74, Num 4, pp 685-692, issn 0033-068XArticle

Profils de diffusion d'impuretés près de la surface des semiconducteurs. I. Enoncé du problème. Diffusions successivesFISTUL, V. I; SINDER, M. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 1995-2002, issn 0015-3222Article

Profils de diffusion d'impuretés près de la surface des semiconducteurs II. Diffusion simultanée et diffusion mutuelleFISTUL, V. I; SINDER, M. I.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 2003-2008, issn 0015-3222Article

Lateral confinement of microchemical surface reactions: effects on mass diffusion and kineticsZEIGER, H. J; EHRLICH, D. J.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 466-480, issn 0734-211X, 15 p.Article

Hopping diffusion across interfacesBLENDER, R; DIETERICH, W; FRISCH, H. L et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 5, pp 3538-3540, issn 0163-1829Article

Chemical diffusion in amphoteric oxide semiconductorsGRZESIK, Z; BAK, T; NOWOTNY, J et al.Advances in applied ceramics. 2007, Vol 106, Num 1-2, pp 77-81, 5 p.Article

Developments of high-voltage all-solid-state thin-film lithium ion batteriesSCHWENZEL, J; THANGADURAI, V; WEPPNER, W et al.Journal of power sources. 2006, Vol 154, Num 1, pp 232-238, issn 0378-7753, 7 p.Article

Diffusive relaxation of Li in particles of silicon oxycarbide measured by galvanostatic titrationsWEIDMAN, P. D; DONGJOON AHN; RAJ, R et al.Journal of power sources (Print). 2014, Vol 249, pp 219-230, issn 0378-7753, 12 p.Article

Experimental and theoretical studies on dynamic properties of Li ions in LixMn2O4CHUYING OUYANG; SIQI SHI; ZHAOXIANG WANG et al.Solid state communications. 2004, Vol 130, Num 7, pp 501-506, issn 0038-1098, 6 p.Article

Reversible A↔B reaction―diffusion process with initially mixed reactants: Boundary layer function approachSINDER, M; SOKOLOVSKY, V; PELLEG, J et al.Physica. B, Condensed matter. 2011, Vol 406, Num 15-16, pp 3042-3049, issn 0921-4526, 8 p.Article

The vacancy wind effect for chemical diffusion in intermetallic compoundsMURCH, G. E; BELOVA, I. V.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2001, Vol 81, Num 1, pp 83-94, issn 1364-2804Article

Defect chemistry : composition, transport, and reactions in the solid state. II: KineticsMAIER, J.Angewandte Chemie. International edition in English. 1993, Vol 32, Num 4, pp 528-542, issn 0570-0833Article

Adsorbate dynamics on a substrate. III: Surface structural disorderingPAIK, S. M; DAS SARMA, S.Surface science. 1989, Vol 219, Num 3, pp L607-L614, issn 0039-6028Article

Crystal growth in gels and Liesegang ring formation. I: Diffusion relationshipsHENISCH, H. K; GARCIA-RUIZ, J. M.Journal of crystal growth. 1986, Vol 75, Num 2, pp 195-202, issn 0022-0248Article

Sur la diffusion d'une partie de l'acide abscissique des pépins de raisin au cours de la phase de réhydratation nécessaire à leur germination = About diffusion of a part of abscisic acid in grapes pips during the rehydration phase necessary for germination duringBROQUEDIS, M.1984, Vol 18, Num 4, pp 273-276Article

Defect chemistry and chemical transport involving interfacesJAMNIK, J; MAIER, J.Solid state ionics. 1999, Vol 119, Num 1-4, pp 191-198, issn 0167-2738Conference Paper

Measurement and analysis of grain boundary grooving by volume diffusionHARDY, S. C; MCFADDEN, G. B; CORIELL, S. R et al.Journal of crystal growth. 1991, Vol 114, Num 3, pp 467-480, issn 0022-0248Article

  • Page / 115