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kw.\*:("Chemical mechanical polishing")

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A study on the stress and nonuniformity of the wafer surface for the chemical-mechanical polishing processLIN, Yeou-Yih; LO, Ship-Peng.International journal, advanced manufacturing technology. 2003, Vol 22, Num 5-6, pp 401-409, issn 0268-3768, 9 p.Article

Investigation on the final polishing slurry and technique of silicon substrate in ULSIYULING LIU; KAILIANG ZHANG; FANG WANG et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 438-444, issn 0167-9317, 7 p.Conference Paper

Effect of process parameters on material removal rate in chemical mechanical polishing of Si(1 0 0)FORSBERG, Markus.Microelectronic engineering. 2005, Vol 77, Num 3-4, pp 319-326, issn 0167-9317, 8 p.Article

Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scaleYONGGUANG WANG; YONGWU ZHAO; WEI AN et al.Applied surface science. 2007, Vol 253, Num 23, pp 9137-9141, issn 0169-4332, 5 p.Article

Synergistic roles of mixed inhibitors and the application of mixed complexing ligands in copper chemical mechanical polishingWANG NING; PAN GUOSHUN; LIU YAN et al.Microelectronic engineering. 2011, Vol 88, Num 11, pp 3372-3374, issn 0167-9317, 3 p.Article

A mathematical model for material removal and chemical-mechanical synergy in chemical-mechanical polishing at molecular scaleBAI, J; ZHAO, Y. W; WANG, Y. G et al.Applied surface science. 2007, Vol 253, Num 20, pp 8489-8494, issn 0169-4332, 6 p.Article

A study on the correlation between electrochemical corrosion and chemical mechanical polishing performance of W and Ti filmSEO, Yong-Jin.Microelectronic engineering. 2007, Vol 84, Num 12, pp 2769-2774, issn 0167-9317, 6 p.Article

In situ endpoint detection by pad temperature in chemical-mechanical polishing of copper overlayHOCHENG, Hong; HUANG, Yun-Liang.IEEE transactions on semiconductor manufacturing. 2004, Vol 17, Num 2, pp 180-187, issn 0894-6507, 8 p.Article

A study on the reproducibility of HSS STI-CMP process for ULSI applicationsJEONG, So-Young; KIM, Sang-Yong; SEO, Yong-Jin et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 480-487, issn 0167-9317, 8 p.Conference Paper

Chemical mechanical polishing of tantalum: oxidizer and pH effectsDU, T; TAMBOLI, D; DESAI, V et al.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 2, pp 87-90, issn 0957-4522, 4 p.Article

Modeling the effects of particle deformation in chemical mechanical polishingXIAOCHUN CHEN; YONGWU ZHAO; YONGGUANG WANG et al.Applied surface science. 2012, Vol 258, Num 22, pp 8469-8474, issn 0169-4332, 6 p.Article

In-situ end point detection of the STI-CMP process using a high selectivity slurryKIM, Sang-Yong; LEE, Kyoung-Jin; SEO, Yong-Jin et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 463-471, issn 0167-9317, 9 p.Conference Paper

A model for wafer scale variation of material removal rate in chemical mechanical polishing based on viscoelastic pad deformationGUANGHUI FU; CHANDRA, Abhijit.Journal of electronic materials. 2002, Vol 31, Num 10, pp 1066-1073, issn 0361-5235, 8 p.Conference Paper

Planarizing ars for dual damascene processingPAVELCHEK, Edward K; CERNIGLIARO, Marjorie; TREFONAS, Peter et al.SPIE proceedings series. 2001, pp 864-872, isbn 0-8194-4031-0, 2VolConference Paper

Signal analysis of the end point detection method based on motor currentKIM, Sang-Yong; PARK, Chang-Jun; SEO, Yong-Jin et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 472-479, issn 0167-9317, 8 p.Conference Paper

Mathematical modeling of polish-rate decay in chemical-mechanical polishingBORUCKI, L.Journal of engineering mathematics. 2002, Vol 43, Num 2-4, pp 105-114, issn 0022-0833Article

Effect of concentric slanted pad groove patterns on slurry flow during chemical mechanical planarizationROSALES-YEOMANS, D; LEE, H; SUZUKI, T et al.Thin solid films. 2012, Vol 520, Num 6, pp 2224-2232, issn 0040-6090, 9 p.Article

Texture investigation in the trench depth direction of very fine copper wires less than 100 nm wide using electron backscatter diffractionKHOO, Khyoupin; ONUKI, Jin.Thin solid films. 2010, Vol 518, Num 12, pp 3413-3416, issn 0040-6090, 4 p.Article

Electrochemical corrosion effects and chemical mechanical polishing characteristics of tungsten film using mixed oxidizersSEO, Yong-Jin; KIM, Nam-Hoon; LEE, Woo-Sun et al.Microelectronic engineering. 2006, Vol 83, Num 3, pp 428-433, issn 0167-9317, 6 p.Article

Interaction between abrasive particles and films during chemical-mechanical polishing of copper and tantalumYING LI; JUNZI ZHAO; PING WU et al.Thin solid films. 2006, Vol 497, Num 1-2, pp 321-328, issn 0040-6090, 8 p.Article

The impact of scaling on metal thickness for advanced back end of line interconnectsCHEN, Hsueh-Chung; FAN, Su-Chen; LIN, Jian-Hong et al.Thin solid films. 2004, Vol 469-70, pp 487-490, issn 0040-6090, 4 p.Conference Paper

Effect of mechanical process parameters on chemical mechanical polishing of Al thin filmsWOONG CHO; YOOMIN AHN; BAEK, Chang-Wook et al.Microelectronic engineering. 2003, Vol 65, Num 1-2, pp 13-23, issn 0167-9317, 11 p.Article

Organic diamond disk versus brazed diamond disk for dressing a chemical―mechanical polishing padTSAI, M. Y; LI, P. H; SUNG, J. C et al.Diamond and related materials. 2012, Vol 23, pp 144-149, issn 0925-9635, 6 p.Article

A dishing model for chemical mechanical polishing of metal interconnect structuresCHANG, Shih-Hsiang.Microelectronic engineering. 2005, Vol 77, Num 1, pp 76-84, issn 0167-9317, 9 p.Article

A study on the chemical mechanical polishing of oxide film using a zirconia (ZrO2)-mixed abrasive slurry (MAS)PARK, Sung-Woo; SEO, Yong-Jin; LEE, Woo-Sun et al.Microelectronic engineering. 2008, Vol 85, Num 4, pp 682-688, issn 0167-9317, 7 p.Article

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