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Results 1 to 25 of 916

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Mechanism of Ge2Sb2Te5 chemical mechanical polishingLIANGYONG WANG; ZHITANG SONG; MIN ZHONG et al.Applied surface science. 2012, Vol 258, Num 12, pp 5185-5190, issn 0169-4332, 6 p.Article

Particles detection and analysis of hard disk substrate after cleaning of post chemical mechanical polishingYATING HUANG; XINCHUN LU; GUOSHUN PAN et al.Applied surface science. 2009, Vol 255, Num 22, pp 9100-9104, issn 0169-4332, 5 p.Article

Dishing effects during chemical mechanical polishing of copper in acidic mediaLUO, Q; BABU, S. V.Journal of the Electrochemical Society. 2000, Vol 147, Num 12, pp 4639-4644, issn 0013-4651Article

Modeling the effects of particle deformation in chemical mechanical polishingXIAOCHUN CHEN; YONGWU ZHAO; YONGGUANG WANG et al.Applied surface science. 2012, Vol 258, Num 22, pp 8469-8474, issn 0169-4332, 6 p.Article

Batch sequencing for run-to-run control : Application to chemical mechanical polishingCHEN, Yih-Hang; SU, An-Jhih; SHIU, Sheng-Jyh et al.Industrial & engineering chemistry research. 2005, Vol 44, Num 13, pp 4676-4686, issn 0888-5885, 11 p.Article

New nontoxic chemical polishing baths for aluminium = Nouveaux bains de polissage chimique non toxique de l'aluminiumTAJIMA, S.Plating and surface finishing. 1985, Vol 72, Num 6, pp 64-67, issn 0360-3164Article

Augmentation de la résistance électrique d'électrodes de verreCHISTYAKOV, V. P; GERSHTANSKAYA, O. S; REUTSKIKH, V. I et al.Steklo i keramika. 1984, Num 10, pp 10-11, issn 0131-9582Article

Characterization of slurries used for chemical-mechanical polishing (CMP) in the semiconductor industryKUNTZSCH, Timo; WITNIK, Ulrike; HOLLATZ, Mark et al.Chemical engineering & technology. 2003, Vol 26, Num 12, pp 1235-1239, issn 0930-7516, 5 p.Article

Dynamic mechanisms of chemical mechanical polishing based on frictional characteristicsHOMMA, Yoshio.Japanese journal of tribology. 2006, Vol 51, Num 4, pp 411-419, issn 1045-7828, 9 p.Article

The influence of feature-scale surface geometry on CMP processesYAO, C.-H; FEKE, D. L; ROBINSON, K. M et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 8, pp 3094-3099, issn 0013-4651Article

Abrasive-free polishing for copper damascene interconnectionKONDO, Seiichi; SAKUMA, Noriyuki; HOMMA, Yoshio et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3907-3913, issn 0013-4651Article

Study of the chemical behavior of hydrofluoric, nitric and sulfuric acids mixtures applied to niobium polishingASPART, A; ANTOINE, C. Z.Applied surface science. 2004, Vol 227, Num 1-4, pp 17-29, issn 0169-4332, 13 p.Article

Mineral-acid-free chemical polishing solutions for ferrous alloysHUIXIN JIANG; XINGFU CHEN; LIANG HONG et al.Applied surface science. 2003, Vol 218, Num 1-4, pp 305-309, issn 0169-4332, 5 p.Article

DEVELOPMENTS IN METAL-FINISHING PLANT. = PERFECTIONNEMENTS DES INSTALLATIONS DE FINITION DES METAUXBLABY T.1977; SHEET METAL INDUSTR.; G.B.; DA. 1977; VOL. 54; NO 12; PP. 1208-1212 (3P.)Article

NOUVEAU PROCEDE DE POLISSAGE CHIMIQUE DE L'ALUMINIUM ET DE SES ALLIAGESKOKAI R; KRANSNYANSZKY J.1977; MAGYAR. ALUMIN.; MAGYAR.; DA. 1977; VOL. 14; NO 9; PP. 269; ABS. ANGL.Article

BREVET PROCEDE DE DECAPAGE-BRILLANTAGE POUR LE CUIVRE ET SES ALLIAGES1978; ; FRA; DA. 1978-12-29; FR/A1/2.388.898; DEP.77-12730/1977-04-27Patent

Static dissolution rate of tungsten film versus chemical adjustments of a reused slurry for chemical mechanical polishingCOETSIER, C. M; TESTA, F; CARRETIER, E et al.Applied surface science. 2011, Vol 257, Num 14, pp 6163-6170, issn 0169-4332, 8 p.Article

Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrateWENHU XU; XINCHUN LU; GUOSHUN PAN et al.Applied surface science. 2010, Vol 256, Num 12, pp 3936-3940, issn 0169-4332, 5 p.Article

Material removal mechanism in chemical mechanical polishing : Theory and modelingJIANFENG LUO; DORNFELD, David A.IEEE transactions on semiconductor manufacturing. 2001, Vol 14, Num 2, pp 112-133, issn 0894-6507Article

Modeling of chemical-mechanical polishing with soft padsSHI, F. G; ZHAO, B.Applied physics. A, Materials science & processing (Print). 1998, Vol 67, Num 2, pp 249-252, issn 0947-8396Article

Exploring CMP solutions to planarity challenges with tungsten plugsMENDONCA, J; MURELLA, K; KIM, I et al.Thin solid films. 1998, Vol 320, Num 1, pp 103-109, issn 0040-6090Conference Paper

Chemical polishing of crystals glass with concentrated acidsLAZAREV, Y. S; DROZHZHINOV, V. A.Glass and ceramics. 1990, Vol 47, Num 11-12, pp 433-434, issn 0361-7610, 2 p.Article

The quantitative description between zeta potential and fluorescent particle adsorption on Cu surfaceHEGENG MEI; XINCHUN LU.Surface and interface analysis. 2014, Vol 46, Num 1, pp 56-60, issn 0142-2421, 5 p.Article

Investigation of chemical mechanical polishing of zinc oxide thin filmsGUPTA, Sushant; KUMAR, Purushottam; ARUL CHAKKARAVATHI, A et al.Applied surface science. 2011, Vol 257, Num 13, pp 5837-5843, issn 0169-4332, 7 p.Article

A new pad-scanning, local- CMP (PASCAL-CMP) technique for reliable Cu-damascene interconnect formationHAYASHI, Y; ONODERA, T; SASAKI, N et al.IEEE 1999 international interconnect technology conference. 1999, pp 100-102, isbn 0-7803-5174-6Conference Paper

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