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Nature of dark-brown SnO₂ films prepared by a chemical vapor deposition methodMATSUSHIMA, Yuta; MAEDA, Kazuyuki; SUZUKI, Takeyuki et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 2008, Vol 116, Num 9, pp 989-993, issn 0914-5400, 5 p.Article

Effect of hydrogen content on the ZnO thin films on the surface of polyethylene terephthalate substrate through electron cyclotron resonance-metal organic chemical vapor depositionPARK, J. H; BYUN, D; JEON, B. J et al.Journal of materials science. 2008, Vol 43, Num 10, pp 3417-3423, issn 0022-2461, 7 p.Conference Paper

A study of the morphology of GaN seed layers on in situ deposited Si_xN_y and its effect on properties of overgrown GaN epilayersMOON, Y. T; XIE, J; FEENSTRA, R. M et al.Journal of crystal growth. 2006, Vol 291, Num 1, pp 301-308, issn 0022-0248, 8 p.Article

Conformal aluminum oxide coating of high aspect ratio structures using metalorganic chemical vapor depositionWIEST, F; CAPODIECI, V; BLANK, O et al.Thin solid films. 2006, Vol 496, Num 2, pp 240-246, issn 0040-6090, 7 p.Article

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Quantitative analysis of variant III CuAu-I-type ordering of Al_xGa_1-xAs on (110), (111)A and (001) GaAs substrates using X-ray diffractionVAN NIFTRIK, A. T. J; BAUHUIS, G. J; SCHERMER, J. J et al.Journal of crystal growth. 2006, Vol 289, Num 1, pp 48-54, issn 0022-0248, 7 p.Article

A novel two-step MOCVD for producing thin copper films with a mixture of ethyl alcohol and water as the additiveLEE, Hsin-Hung; CHIAPYNG LEE; KUO, Yu-Lin et al.Thin solid films. 2006, Vol 498, Num 1-2, pp 43-49, issn 0040-6090, 7 p.Conference Paper

Effects of plasma treatment in the tungsten process for chemical vapor deposition titanium nitride barrier film beyond nanometer technologyCHEN, K. W; WANG, Y. L; CHANG, L et al.Thin solid films. 2006, Vol 498, Num 1-2, pp 64-69, issn 0040-6090, 6 p.Conference Paper

Mesostructured thin films deposited by PECVD from TMGeKAZIMIERSKI, P.Thin solid films. 2006, Vol 495, Num 1-2, pp 144-148, issn 0040-6090, 5 p.Conference Paper

High-rate deposition of SiN_x films over 100 nm/min by Cat-CVD method at low temperatures below 80 °COSONO, Tetsuo; HEYA, Akira; NIKI, Toshikazu et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 55-57, issn 0040-6090, 3 p.Conference Paper

Characterization of polyconjugated thin films synthesized by hot-wire chemical vapor deposition of anilineZAHARIAS, Gillian A; SHI, Helen H; BENT, Stacey F et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 341-345, issn 0040-6090, 5 p.Conference Paper

Improvement of indium-tin oxide films on polyethylene terephthalate substrates using hot-wire surface treatmentWUU, Dong-Sing; LIEN, Shui-Yang; MAO, Hsin-Yuan et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 346-349, issn 0040-6090, 4 p.Conference Paper

Growth and characterization of single crystal CVD diamond film based nuclear detectorsBALDUCCI, A; MARINELLI, Marco; POTENZA, R et al.Diamond and related materials. 2006, Vol 15, Num 2-3, pp 292-295, issn 0925-9635, 4 p.Conference Paper

Morphology, optical properties and single-electron spectrum of 'detector-quality' polycrystalline diamond layers, prepared by MW CVDLIGATCHEV, V; GAN, B.Diamond and related materials. 2006, Vol 15, Num 2-3, pp 410-416, issn 0925-9635, 7 p.Conference Paper

Plasma CVD on the inner surface of a microchannelKADOWAKI, M; YOSHIZAWA, H; MORI, S et al.Thin solid films. 2006, Vol 506-07, pp 123-127, issn 0040-6090, 5 p.Conference Paper

Species responsible for Si-H₂ bond formation in a-Si:H films deposited using silane high frequency dischargesSHIRATANI, Masaharu; KOGA, Kazunori; KAGUCHI, Naoto et al.Thin solid films. 2006, Vol 506-07, pp 17-21, issn 0040-6090, 5 p.Conference Paper

Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor depositionDAIMARU, T; TABATA, A; MIZUTANI, T et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 102-106, issn 0040-6090, 5 p.Conference Paper

Sub-bandgap optical absorption spectroscopy of hydrogenated microcrystalline silicon thin films prepared using hot-wire CVD (Cat-CVD) processGOKTAS, O; ISIK, N; OKUR, S et al.Thin solid films. 2006, Vol 501, Num 1-2, pp 121-124, issn 0040-6090, 4 p.Conference Paper

The mechanism of alumina formation from TMA and molecular oxygen using catalytic-CVD with an iridium catalyzerOGITA, Yoh-Ichiro; TOMITA, Toshiyuki.Thin solid films. 2006, Vol 501, Num 1-2, pp 35-38, issn 0040-6090, 4 p.Conference Paper

Chemical vapor growth of NiGa₂O₄ films: Advantages and limitations of a single molecular sourceMATHUR, Sanjay; BARTH, Sven; HAO SHEN et al.Chemical vapor deposition (Print). 2005, Vol 11, Num 1, pp 11-16, issn 0948-1907, 6 p.Article

Oxidation characteristics of nanodot and nanobump on TiN thin films by atomic force microscopyFANG, Te-Hua.Electrochimica acta. 2005, Vol 50, Num 14, pp 2793-2797, issn 0013-4686, 5 p.Article

Preparation of silver thin films using liquid-phase precursors by metal organic chemical vapor deposition and their conversion to silver selenide films by selenium vapor depositionKIM, Hong-Ki; JEONG, Han-Cheol; KYUNG SOO KIM et al.Thin solid films. 2005, Vol 478, Num 1-2, pp 72-76, issn 0040-6090, 5 p.Article

Deposition of thin films of SiO_xC_yH in a surfatron microwave plasma reactor with hexamethyldisiloxane as precursorWALKIEWICZ-PIETRZYKOWSKA, Agnieszka; COTRINO, José; GONZALEZ-ELIPE, Agustin R et al.Chemical vapor deposition (Print). 2005, Vol 11, Num 6-7, pp 317-323, issn 0948-1907, 7 p.Article

Metallo-organic low-pressure chemical vapor deposition of Ta₂O₅ using TaC₁₂H₃₀O₅N as precursor for batch fabrication of microsystemsBRIAND, Danick; MONDIN, Gianni; JENNY, Sabine et al.Thin solid films. 2005, Vol 493, Num 1-2, pp 6-12, issn 0040-6090, 7 p.Article