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Thermomechanical treatments of a 1050 pearlite steel = Thermomechanische Behandlungen eines perlitischen Stahles des Typs 1050CHEN, L.J; WU, T.W; CHENG, H.C et al.Metallurgical transactions. A, Physical metallurgy and materials science. 1983, Vol 14A, Num 3, pp 365-378, issn 0360-2133Article

The ARTS compendium : FHWA's electronic rural ITS project tracking system = Le manuel ARTS (Advanced Rural Transportation System) : le système électronique de répérage des projets ITS en Zone rurale, par la FHWABELFOR, G; CHEN, L.J; LIU, C et al.Public roads. 1997, Num 6, pp 23-26, issn 0033-3735Article

Device and substrate design for sub-10 nm MOSFETsIEONG, Meikei; DORIS, Bruce; KEDZIERSKI, Jakub et al.Proceedings - Electrochemical Society. 2004, pp 371-382, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Optimization of pre-amorphization and dopant implant conditions for advanced annealingFELCH, S. B; GRAOUI, H; MAYUR, A et al.Proceedings - Electrochemical Society. 2004, pp 31-38, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Laser anneal technology for poly-silicon dopant activation enhancementMA, Y; AHMED, K. Z; MUTHUKRISHNAN, S et al.Proceedings - Electrochemical Society. 2004, pp 230-235, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

Fully silicided metal gates for high performance CMOs technologyMASZARA, W. P.Proceedings - Electrochemical Society. 2004, pp 341-353, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Radiative properties of silicon considering surface imperfections and chamber effectsZHANG, Z. M; LEE, H. J.Proceedings - Electrochemical Society. 2004, pp 19-30, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Significant improvement in device performance of advanced dynamic random access memory by hot wall-based single wafer rapid thermal annealingSETOKUBO, Tsuyoshi; NAKANO, Eiji; AIZAWA, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 135-144, issn 0161-6374, isbn 1-56677-406-3, 10 p.Conference Paper

Solid phase epitaxy: Activation and deactivation of boron in ultra-shallow junctionsLERCH, W; PAUL, S; NIESS, J et al.Proceedings - Electrochemical Society. 2004, pp 90-105, issn 0161-6374, isbn 1-56677-406-3, 16 p.Conference Paper

Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOs deviceLEE, K. L; CARDONE, F; SAUNDERS, P et al.Proceedings - Electrochemical Society. 2004, pp 71-81, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Growth of nickel silicide quantum dot arrays on epitaxial SI0.7GE0.3 on (001) silicon with a sacrificial amorphous silicon interlayerCHEN, L. J; WU, W. W; CHENG, S. L et al.Proceedings - Electrochemical Society. 2003, pp 325-330, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Poly-Si gate CMOS with hafnium silicate gate dielectricHOBBS, Christopher; GRANT, John; FRANKE, Andrea et al.Proceedings - Electrochemical Society. 2003, pp 361-366, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Intra-die temperature non uniformity related to front side emissivity dependence during rapid thermal annealingLAVIRON, C; LINDSAY, R; MICHALLET, A et al.Proceedings - Electrochemical Society. 2003, pp 3-9, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Pattern effects during spike annealing of ultra-shallow implantsNIESS, J; NENYEI, Z; LERCH, W et al.Proceedings - Electrochemical Society. 2003, pp 11-16, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

High resolution investigation of atomic interdiffusion during CO/NI/SI phase transitionALBERTI, Alessandra; CAFRA, Brunella; BONGIORNO, Corrado et al.Proceedings - Electrochemical Society. 2003, pp 161-166, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Selective oxidation of tungsten-gate stacks in high-volume DRAM productionROTERS, Georg; HAYN, Regina; KEGEL, Wilhelm et al.Proceedings - Electrochemical Society. 2003, pp 385-390, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Sidewall grooving on COSI2 narrow linesCHAMIRIAN, O; DE POTTER, M; LAUWERS, A et al.Proceedings - Electrochemical Society. 2003, pp 155-160, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Hafnium titanate as a high-K gate insulatorCHEN, F; LI, M; AFANASEV, V et al.Proceedings - Electrochemical Society. 2004, pp 278-285, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Challenges in integration of metal gate high-K dielectrics gate stacksTSAI, W; RAGNARSSON, L-A; SCHRAM, T et al.Proceedings - Electrochemical Society. 2004, pp 321-327, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Low thermal budget germanium MOS technologyCHI ON CHUI; SARASWAT, Krishna C.Proceedings - Electrochemical Society. 2004, pp 396-405, issn 0161-6374, isbn 1-56677-406-3, 10 p.Conference Paper

Nickel SALICIDE technology for sub-100nm CMOS devicesLU, J. P; MILES, D. S; MERCER, D et al.Proceedings - Electrochemical Society. 2004, pp 159-173, issn 0161-6374, isbn 1-56677-406-3, 15 p.Conference Paper

Recent progress in gate dielectric scalingHIGASHI, G. S; KRAUS, P; TEVATIA, G et al.Proceedings - Electrochemical Society. 2004, pp 271-277, issn 0161-6374, isbn 1-56677-406-3, 7 p.Conference Paper

Strained germanium MOSFETs: Devices and process technologyRITENOUR, A; LEE, M. L; LU, N et al.Proceedings - Electrochemical Society. 2004, pp 406-411, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

TiCl4 as a precursor in the TiN deposition by ALD and PEALDELERS, Kai-Erik; WINKLER, Jerry; MARCUS, Steven et al.Proceedings - Electrochemical Society. 2004, pp 361-368, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Ultra shallow P+/N junctions fabricated by plasma doping and all solid state laser annealingTSUTSUI, Kazuo; SASAKI, Yuichiro; JIN, Cheng-Guo et al.Proceedings - Electrochemical Society. 2004, pp 106-111, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

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