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Prozess- und Bauelementesimulation für MOS-Schaltkreise = Simulation de processus et de composants pour circuits MOS = Process and component simulation for MOS circuitsSCHAARSCHMIDT, J; MÖSCHWITZER, A; SCHÜFFNY, R et al.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 3, pp 109-112, issn 0323-4657Article

High G MEMS integrated accelerometerDAVIES, B. R; BARRON, C. C; MONTAGUE, S et al.SPIE proceedings series. 1997, pp 52-62, isbn 0-8194-2459-5Conference Paper

Full-swing three-state driver for single-channel MOS integrated circuitsTORELLI, G; DEVECCHI, D.Alta frequenza. 1983, Vol 52, Num 6, pp 532-536, issn 0002-6557Article

A framework to evaluate technology and device design enhancements for MOS integrated circuitsSODINI, C. G; WONG, S. S; KO, P.-K et al.IEEE journal of solid-state circuits. 1989, Vol 24, Num 1, pp 118-127, issn 0018-9200, 10 p.Article

RELAX: a new circuit simulator for large scale MOS integrated circuitsLELARASMEE, E; SANGIOVANNI-VINCENTELLI, A.Computer-aided design. 1983, Vol 15, Num 5, pp 262-270, issn 0010-4485Article

MOS AREA SENSOR. II: LOW-NOISE MOS AREA SENSOR WITH ANTIBLOOMING PHOTODIODESOHBA S; NAKAI M; ANDO H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1682-1687; BIBL. 17 REF.Article

STATIC ESFI MOS (SOS) CELLS FOR HIGH-DENSITY MEMORIES.GOSER K; POMPER M.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 4; PP. 220-225; BIBL. 11 REF.Article

SPEICHERSCHALTUNGEN MIT MNOS-TRANSISTOREN. = CIRCUITS MEMOIRE A TRANSISTORS MNOSHORNINGER K.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 4; PP. 213-219; BIBL. 9 REF.Article

AN OPTIMIZED OUTPUT STAGE FOR MOS INTEGRATED CIRCUITS.HUNG CHANG LIN; LINHOLM LW.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 2; PP. 106-109Article

CMOS INTEGRATED CIRCUIT RELIABILITYSCHNABLE GL; COMIZZOLI RB.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 1; PP. 33-50; BIBL. 145 REF.Article

M.O.S. DEVELOPMENTS.STRATH AB.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 6; PP. 38.Article

GRACE A L'IMPLANTATION IONIQUE ET A L'ELECTRON-LITHOGRAPHIE, IBM A REALISE UNE RAM DE 8 K BITS EN MOS AVEC ACCES EN 90 NS.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 214; PP. 7Article

CMOS OPTIMIZATION FOR RADIATION HARDNESS.DERBENWICK GF; FOSSUM JG.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 433-436; BIBL. 8 REF.Conference Paper

EIN HALBLEITERKOPPELBAUSTEIN FUER BREITBANDSIGNALE. = MATRICE DE COUPLAGE A SEMI-CONDUCTEUR POUR SIGNAUX A LARGE BANDERALL B.1975; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DTSCH.; DA. 1975; VOL. 48; NO 2-3; PP. 60-65; ABS. ANGL.; BIBL. 2 REF.Article

RECHNERGESTUETZTER TOPOGRAPHIE-ENTWURF FUER MOS-STANDARDZELLENSCHALTUNGEN MIT DEM PROGRAMMSYSTEM AVESTA. = CONCEPTION ASSISTEE PAR CALCULATION DE LA TOPOGRAPHIE POUR DES CIRCUITS A CELLULES NORMALISEES AVEC LE SYSTEME DE PROGRAMME AVESTAKOLLER K; LAUTHER U.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 1; PP. 8-12; ABS. ANGL.; BIBL. 5 REF.Article

ASPECTS PHYSIQUES DE LA FIABILITE DES BLOCS DE CIRCUITS INTEGRES A TRANSISTORS MOSKOSTYCHEV GI.1974; RADIOTEKHNIKA; S.S.S.R.; DA. 1974; VOL. 29; NO 8; PP. 76-80; BIBL. 6 REF.Article

BESONDERHEITEN DES ENTWURFS INTEGRIERTER MIS-SCHALTKREISE = PARTICULARITES DE LA CONCEPTION DES CIRCUITS INTEGRES MOSROESSLER F.1982; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1982; VOL. 31; NO 1; PP. 39-43Article

PROBLEMI CONNESSI ALLA VALUTAZIONE ED ALL' IMPIEGO DI CONTENITORI PLASTICI IN APPLICAZIONI A VITA UTILE MOLTO LUNGA. = PROBLEMES LIES A L'EVALUATION ET A EMPLOI DE CONTAINERS EN PLASTIQUE A DUREE DE VIE TRES LONGUEBASILE L; FANTINI F.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 324-332; BIBL. 54 REF.Article

ON MODELING OF THE SELF-ALIGNED FIELD IMPLANTED MOS DEVICES WITH NARROW WIDTHS.BANDALI MB; LO TC.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 573-576; BIBL. 2 REF.Conference Paper

FILTRES CAPACITIFS A COMMUTATIONSPOPOV VP.1974; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1974; VOL. 17; NO 9; PP. 36-42; BIBL. 7 REF.Article

ANALYSIS OF HARMONIC DISTORTION IN SINGLE-CHANNEL MOS INTEGRATED CIRCUITSFONG E; ZEMAN R.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 1; PP. 83-86; BIBL. 8 REF.Article

MULGA - AN INTERACTIVE SYMBOLIC LAYOUT SYSTEM FOR THE DESIGN OF INTEGRATED CIRCUITSWESTE NHE.1981; BELL SYST. TECH. J.; ISSN 0005-8580; USA; DA. 1981; VOL. 60; NO 6; PART. 1; PP. 823-857; BIBL. 18 REF.Article

L'AFFIDABILITA DEI COMPONENTI A MOS DAL PUNTO DI VISTA DI UN UTILIZZATORE. = LA FIABILITE DES COMPOSANTS MOS DU POINT DE VUE D'UN UTILISATEURSALVINI A.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 318-324Article

A MOS MODEL FOR COMPUTER-AIDED DESIGN.KLAASSEN FM.1976; PHILIPS RES. REP.; NETHERL.; DA. 1976; VOL. 31; NO 1; PP. 71-83; BIBL. 20 REF.Article

FAULT CLUSTERING: MODELING AND OBSERVATION ON EXPERIMENTAL LSI CHIPS. = ACCUMULATION DE DEFAUTS: MODELISATION ET OBSERVATION SUR DES PAILLETTES EXPERIMENTALES INTEGREES A GRANDE ECHELLEMUEHLDORF EI.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 4; PP. 237-244; BIBL. 14 REF.Article

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