Selected papers from the ULIS 2011 ConferenceFERAIN, Isabelle; FIEGNA, Claudio.Solid-state electronics. 2012, Vol 71, issn 0038-1101, 115 p.Conference Proceedings

Papers Selected from the Ultimate Integration on Silicon Conference 2009, ULIS 2009LEMME, Max; MANTL, Siegfried.Solid-state electronics. 2009, Vol 53, Num 12, issn 0038-1101, 126 p.Serial Issue

2005 ULIS Conference. Selected papersSANGIORGI, Enrico; FIEGNA, Claudio.Solid-state electronics. 2006, Vol 50, Num 1, issn 0038-1101, 104 p.Conference Proceedings

Characterization and metrology for ULSI technologySEILER, David G.IEEE transactions on semiconductor manufacturing. 2006, Vol 19, Num 4, pp 372-403, issn 0894-6507, 31 p.Conference Paper

Differential silicide thickness for ULSI scalingTAYLOR, William J; SMITH, James; NGUYEN, Jen-Yee et al.Proceedings - Electrochemical Society. 2003, pp 278-287, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Carbon nanotube technologies for future ULSI via interconnectsAWANO, Yuji.SPIE proceedings series. 2005, pp 37-44, isbn 0-8194-5706-X, 8 p.Conference Paper

The double jet ionizer for ULSI manufacturing processes : Special section on issues related to semiconductor manufacturing at technology nodes below 70 nmIMAZONO, Hiroyuki; TERASHIGE, Takashi; OKANO, Kazuo et al.IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 189-193, issn 0894-6507Article

Improvements in both thermal stability of Ni-silicide and electrical reliability of gate oxides using a stacked polysilicon gate structureJAM WEM LEE; LIN, Shen-Xiang; LEI, Tan-Fu et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 9, pp G530-G533, issn 0013-4651Article

Epitaxial silicide interfaces in microelectronicsTUNG, R. T; OHMI, S.Thin solid films. 2000, Vol 369, Num 1-2, pp 233-239, issn 0040-6090Conference Paper

Compact quasi-analytic equations for estimating the temperature distribution of ULSI interconnectionsXIAO, X; YOU, X; RUAN, G et al.Microelectronic engineering. 2002, Vol 60, Num 3-4, pp 415-428, issn 0167-9317Article

Special Issue with Papers Selected from the Ultimate Integration on Silicon Conference, Ulis 2008SELMI, Luca; ESSENI, David; PALESTRI, Pierpaolo et al.Solid-state electronics. 2009, Vol 53, Num 4, issn 0038-1101, 68 p.Serial Issue

Thin film transistors in ULSI -status and futureYUE KUO.Proceedings - Electrochemical Society. 2003, pp 322-329, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

Novel SOI-like structures for improved thermal dissipationOSHIMA, K; CRISTOLOVEANU, S; GUILLAUMOT, B et al.IEEE International SOI conference. 2002, pp 95-96, isbn 0-7803-7439-8, 2 p.Conference Paper

Modelling and simulation for dielectric constant of aerogelXIA XIAO; STREITER, Reinhard; GANG RUAN et al.Microelectronic engineering. 2000, Vol 54, Num 3-4, pp 295-301, issn 0167-9317Article

Simplified monitoring technique for line-short defects that provides high sensitivity and high throughput : Technologies supporting semiconductor scientific manufacturing : Process monitoring, testing, failure analysis and reliabilityKIKUCHI, Hiroaki; KODAMA, Noriyuki; NISHIO, Naoharu et al.NEC research & development. 2000, Vol 41, Num 4, pp 332-335, issn 0547-051XArticle

Mainstreaming SOI CMOS technologySHAHIDI, G. G.SPIE proceedings series. 1999, pp 15-21, isbn 0-8194-3480-9Conference Paper

Current status of failure analysis for ULSIsNAKAJIMA, S; UEKI, T; SHIONOYA, Y et al.Microelectronics and reliability. 1998, Vol 38, Num 9, pp 1369-1377, issn 0026-2714Article

Tool commonality analysis for yield enhancementKONG, George.ASMC proceedings. 2002, pp 202-205, issn 1078-8743, isbn 0-7803-7158-5, 4 p.Conference Paper

High-performance and damage-free neutral-beam etching processes using negative ions in pulse-time-modulated plasmaSAMUKAWA, Seiji.Applied surface science. 2007, Vol 253, Num 16, pp 6681-6689, issn 0169-4332, 9 p.Article

Unveiling the electromigration physics of ULSI interconnects through statisticsCHER MING TAN; RAGHAVAN, Nagarajan.Semiconductor science and technology. 2007, Vol 22, Num 8, pp 941-946, issn 0268-1242, 6 p.Article

An efficient low-degree RMST algorithm for VLSI/ULSI physical designYIN WANG; XIANLONG HONG; TONG JING et al.Lecture notes in computer science. 2004, pp 442-452, issn 0302-9743, isbn 3-540-23095-5, 11 p.Conference Paper

Use of Ti_xTiN as cap layer for the formation of cobalt silicideVULPIO, M; FAZIO, D; BILECI, M et al.Proceedings - Electrochemical Society. 2003, pp 167-173, issn 0161-6374, isbn 1-56677-390-3, 7 p.Conference Paper

Closed-form formulae for frequency-dependent 3-D interconnect inductanceZHAOMIN ZHU; XIAO XIA; STREITER, Reinhard et al.Microelectronic engineering. 2001, Vol 56, Num 3-4, pp 359-370, issn 0167-9317Article

Changes in orientational polarization and structure of silicon dioxide film by fluorine additionSANG WOO LIM; SHIMOGAKI, Y; NAKANO, Y et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 11, pp 4196-4202, issn 0013-4651Article

Low-k silicon nitride film for copper interconnects process prepared by catalytic chemical vapor deposition method at low temperatureSATO, Hidekazu; IZUMI, Akira; MASUDA, Atsushi et al.Thin solid films. 2001, Vol 395, Num 1-2, pp 280-283, issn 0040-6090Conference Paper