Electrodeposition of low-dimensional phases on au studied by EQCM and XRDSHANNON, Curtis.Proceedings - Electrochemical Society. 2003, pp 489-490, issn 0161-6374, isbn 1-56677-376-8, 2 p.Conference Paper

Pairing reactions between substitutional and interstitial defects caused by the same transition metal in silicon float zone crystalsLEMKE, H; IRMSCHER, K.Proceedings - Electrochemical Society. 2004, pp 146-159, issn 0161-6374, isbn 1-56677-418-7, 14 p.Conference Paper

Application of electric current in growing silicon single crystalsWANG, Jong Hoe.Proceedings - Electrochemical Society. 2004, pp 3-11, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Advanced multilevel interconnect technologies for 40-nm Lg devicesOHBA, Takayuki.Proceedings - Electrochemical Society. 2003, pp 183-193, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

Process integration on glass substrate by CW laser lateral crystallization (CLC)SASAKI, Nobuo.Proceedings - Electrochemical Society. 2005, pp 259-269, issn 0161-6374, isbn 1-56677-464-0, 11 p.Conference Paper

Cmos scaling and nanoelectronics new materials and processesNISHI, Yoshio.Proceedings - Electrochemical Society. 2005, pp 15-26, issn 0161-6374, isbn 1-56677-464-0, 12 p.Conference Paper

A kinetic model for p-type doping in silicon epitaxy by CVDMEHTA, Bhavesh; MENG TAO.Proceedings - Electrochemical Society. 2004, pp 12-22, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

FTIR measurement of nitrogen in silicon using shuttle type sample stageWATANABE, Masaharu; TAKENAWA, Noriaki.Proceedings - Electrochemical Society. 2004, pp 121-131, issn 0161-6374, isbn 1-56677-418-7, 11 p.Conference Paper

Modeling of internal gettering for metal impurities by oxide precipitates in CZ-Si wafersSUEOKA, Koji.Proceedings - Electrochemical Society. 2004, pp 176-187, issn 0161-6374, isbn 1-56677-418-7, 12 p.Conference Paper

ULSI process integration III (Paris, 28 April - 2 May 2003)Claeys, C.L; Gonzales, F; Murota, J et al.Proceedings - Electrochemical Society. 2003, issn 0161-6374, isbn 1-56677-376-8, XVII, 598 p, isbn 1-56677-376-8Conference Proceedings

Plasma technologies for low-k dry etchingTATSUMI, Tetsuya.Proceedings - Electrochemical Society. 2003, pp 206-216, issn 0161-6374, isbn 1-56677-376-8, 11 p.Conference Paper

Single and few electron devices integration trendsGAUTIER, Jacques.Proceedings - Electrochemical Society. 2003, pp 263-265, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Thin film transistors in ULSI -status and futureYUE KUO.Proceedings - Electrochemical Society. 2003, pp 322-329, issn 0161-6374, isbn 1-56677-376-8, 8 p.Conference Paper

High purity silicon VI (Phoenix AZ, 22-27 October 2000)Claeys, C.L; Rai-Choudhury, P; Watanabe, M et al.SPIE proceedings series. 2000, isbn 1-56677-284-2, XIX, 695 p, isbn 1-56677-284-2Conference Proceedings

Logic based DRAM technology evolution through ultimate integrationMAZOYER, Pascale; CAILLAT, Christian; BOUCHE, Michel et al.Proceedings - Electrochemical Society. 2005, pp 45-52, issn 0161-6374, isbn 1-56677-464-0, 8 p.Conference Paper

SPP photonic probe of damascene line qualityKNIGHT, Gary D; SMY, Tom J.Proceedings - Electrochemical Society. 2005, pp 206-217, issn 0161-6374, isbn 1-56677-464-0, 12 p.Conference Paper

Reliability of damascene copper interconnectsUENO, Kazuyoshi; ISHIGAMI, Takashi; KAKUHARA, Yumi et al.Proceedings - Electrochemical Society. 2005, pp 408-418, issn 0161-6374, isbn 1-56677-464-0, 11 p.Conference Paper

Formation and control of defects in nitrogen doped silicon crystalsHUBER, A; LAMBERT, U; HÄCKL, W et al.Proceedings - Electrochemical Society. 2004, pp 77-85, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Hydrogen diffusion characterized by hydrogen enhanced thermal donor formation in p-type Czochralski silicon at temperatures between 350 and 450 °CHUANG, Y. L; MA, Y; JOB, R et al.Proceedings - Electrochemical Society. 2004, pp 419-427, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper

Modelling end-of-the-roadmap transistorsASENOV, A; BROWN, A. R; WATLING, J. R et al.Proceedings - Electrochemical Society. 2003, pp 306-321, issn 0161-6374, isbn 1-56677-376-8, 16 p.Conference Paper

Diffused silicon transistors and switches (1954-55): The beginning of integrated circuit technologyHOLONYAK, N. JR.Proceedings - Electrochemical Society. 2003, pp 68-106, issn 0161-6374, isbn 1-56677-376-8, 39 p.Conference Paper

Cleaning for sub 0.1 μm technology: A particular challengeKNOTTER, D. Martin.Proceedings - Electrochemical Society. 2003, pp 349-360, issn 0161-6374, isbn 1-56677-376-8, 12 p.Conference Paper

Analysis of CMOS gate-to-drain leakage current and proposition of a new cobalt salicide selective etch chemistry for high dram yieldFROMENT, Benoit; REGNIER, Christophe; BASSO, Marie-Thérèse et al.Proceedings - Electrochemical Society. 2003, pp 397-399, issn 0161-6374, isbn 1-56677-376-8, 3 p.Conference Paper

Technology and applications of silicon-on-nothingMIZUSHIMA, I; SATO, T; TSUNASHIMA, Y et al.Proceedings - Electrochemical Society. 2005, pp 245-258, issn 0161-6374, isbn 1-56677-464-0, 14 p.Conference Paper

Improvement in the SIMS measurement of bulk nitrogen in siliconPARK, Byoung-Suk; WANG, L; HOCKETT, R. S et al.Proceedings - Electrochemical Society. 2004, pp 60-68, issn 0161-6374, isbn 1-56677-418-7, 9 p.Conference Paper