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2004 international conference on indium phosphide and related materials (16th IPRM, conference proceedings)International Conference on Indium Phosphide and Related Materials. 2004, isbn 0-7803-8595-0, 1Vol, XIV-778 p, isbn 0-7803-8595-0Conference Proceedings

Gallium nitride materials and devices II (22-25 January 2007, San Jose, California, USA)Morkoç, Hadis; Litton, Cole W.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6586-3, 1Vol, various pagings, isbn 978-0-8194-6586-3Conference Proceedings

Internal strain and photoelastic effects in Ga1-xAlxAs/GaAs and In1-xGaxAsyP1-yADACHI, S; OE, K.Journal of applied physics. 1983, Vol 54, Num 11, pp 6620-6627, issn 0021-8979Article

GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsROCKETT, P. I.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1573-1579, issn 0018-9383Article

The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction materialHUTCHINGS, K. M; GRASSIE, A. D. C; LAKRIMI, M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1057-1059, issn 0268-1242Article

International conference on radiative recombination and related phenomena in III-V compound semiconductors, Prague, 4-7 October, 1983Czechoslovak journal of physics. 1984, Vol 34, Num 5, pp 365-394, issn 0011-4626, BConference Proceedings

Zero-current voltage oscillations in GaAs-AlGaAs heterojunctionsGRASSIE, A. D. C; LAKRIMI, M; HUTCHINGS, K. M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 983-987, issn 0268-1242Article

Etude d'une nouvelle technique de diffusion dans les semi-conducteurs III-V et application à la réalisation de composants optoélectroniques = Development of new technology for diffusion in III. V semiconductors; application to optoelectronic devices realizationLAUNAY, François.1984, 162 pThesis

III-V Semiconductor integrated circuits: a perspectiveMANDAL, R. P.Solid state technology. 1982, Vol 25, Num 1, pp 94-103, issn 0038-111XArticle

Characterization of multilayer GaAs/AlGaAs transistor structures by variable angle spectroscopic ellipsometryMERKEL, K. G; SNYDER, P. G; WOOLLAM, J. A et al.Japanese journal of applied physics. 1989, Vol 28, Num 6, pp 1118-1123, issn 0021-4922, 6 p., 1Article

Frequency response of InP/InGaAsP/InGaAs avalanche photodiodesCAMPBELL, J. C; JOHNSON, B. C; QUA, G. J et al.Journal of lightwave technology. 1989, Vol 7, Num 5, pp 778-784, issn 0733-8724, 7 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Structural and electrical investigation of high temperature Fe implanted gainp layers lattice matched to GaAsCESCA, T; GASPAROTTO, A; VEMA, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 276-277, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

Effective-mass superlatticeSASAKI, A.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7016-7020, issn 0163-1829Article

On the possibility of intrinsic negative differential resistance in III-V quantum wellsRIDLEY, B. K.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 22, pp L789-L790, issn 0022-3719Article

Etude expérimentale des propriétés de transport non stationnaire dans InP par photoconduction = Experimental study of non stationary transport properties in InP by photoconductionDe Carre, Patrice; Laval, Suzanne.1990, 202 p.Thesis

STRUCTURE CRISTALLINE DES PHASES ORDONNEES A BASE DE COMPOSES SEMICONDUCTEURS DU TYPE AIIIBVVERNER VD; NICHUGOVSKIJ DK.1974; FIZ. TVERD. TELA; S.S.S.R.; DA. 1974; VOL. 16; NO 5; PP. 1503-1504; BIBL. 4 REF.Article

TANK-MISCING METHODS FOR PRODUCING TIME-VARYING REACTIVE GAS MIXTURES FOR CHEMICAL VAPOR DEPOSITION.DONAGHEY LF; SHAIKH SA.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 26; NO 1; PP. 69-75; BIBL. 12 REF.Article

LES IMPURETES ET LEUR INTERACTION DANS LES CRISTAUX DE SILICIUM, DE GERMANIUM ET LES CRISTAUX AIIIBVBORISOVA LA.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 111-126; BIBL. 1 P. 1/2Article

CARRIER LIFETIME MEASUREMENT FOR DETERMINATION OF RECOMBINATION RATES AND DOPING LEVELS OF III-V SEMICONDUCTOR LIGHT SOURCESSU CB; OLSHANSKY R.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 833-835; BIBL. 9 REF.Article

Tomographie laser à balayage : application au test de qualification des semi-conducteursBaroudi, Ahmed; Fillard, J. P.1989, 169 p.Thesis

Etude par électroréflexion d'alliages III-V à base d'antimoine et des propriétés électrooptiques de super-réseaux GaAs/GaAlAs = Electroreflectance studies of Sb based III-V alloys and electro-optical properties of GaAs/GaAlAs super latticesBouche, Christian; Alibert, Claude.1989, 140 p.Thesis

Conception et réalisation d'un appareillage de frottement intérieur destiné à l'étude des matériaux semi-conducteurs. Application à l'étude de la mobilité des dislocations dans InSb non dopé = Design and realization of an internal friction apparatus for semiconductor studies. Application to the study of dislocation mobility in undoped InSbGauffier, Jean-Luc; Astie, Pierre.1992, 129 p.Thesis

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