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2004 international conference on indium phosphide and related materials (16th IPRM, conference proceedings)International Conference on Indium Phosphide and Related Materials. 2004, isbn 0-7803-8595-0, 1Vol, XIV-778 p, isbn 0-7803-8595-0Conference Proceedings

Gallium nitride materials and devices II (22-25 January 2007, San Jose, California, USA)Morkoç, Hadis; Litton, Cole W.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6586-3, 1Vol, various pagings, isbn 978-0-8194-6586-3Conference Proceedings

Zero-current voltage oscillations in GaAs-AlGaAs heterojunctionsGRASSIE, A. D. C; LAKRIMI, M; HUTCHINGS, K. M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 983-987, issn 0268-1242Article

GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsROCKETT, P. I.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1573-1579, issn 0018-9383Article

The fabrication of sub-micron width mesas in GaAs/Ga1-xAlxAs heterojunction materialHUTCHINGS, K. M; GRASSIE, A. D. C; LAKRIMI, M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1057-1059, issn 0268-1242Article

Characterization of multilayer GaAs/AlGaAs transistor structures by variable angle spectroscopic ellipsometryMERKEL, K. G; SNYDER, P. G; WOOLLAM, J. A et al.Japanese journal of applied physics. 1989, Vol 28, Num 6, pp 1118-1123, issn 0021-4922, 6 p., 1Article

Frequency response of InP/InGaAsP/InGaAs avalanche photodiodesCAMPBELL, J. C; JOHNSON, B. C; QUA, G. J et al.Journal of lightwave technology. 1989, Vol 7, Num 5, pp 778-784, issn 0733-8724, 7 p.Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Structural and electrical investigation of high temperature Fe implanted gainp layers lattice matched to GaAsCESCA, T; GASPAROTTO, A; VEMA, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 276-277, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

Mechanisms of III-V light-emitting diode bulk degradationTORCHINSKAYA, T. V.SPIE proceedings series. 1998, pp 200-202, isbn 0-8194-2756-X, 2VolConference Paper

Single-stage calculation of the total energy of compositionally modulated III-V alloysGLAS, F.Journal of applied physics. 1989, Vol 66, Num 4, pp 1667-1670, issn 0021-8979, 4 p.Article

Monte Carlo particle investigation of noise in short n+-n-n+ GaAs diodesJUNEVICIUS, D; REKLAITIS, A.Electronics Letters. 1988, Vol 24, Num 21, pp 1307-1308, issn 0013-5194Article

Computer simulation experiment on the mm-wave properties of indium phosphide double drift impattsBANERJEE, J. P; PATI, S. P; ROY, S. K et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 359-364, issn 0031-8965Article

Characteristics of Schottky diodes on AlxIn1-xAs grown by MOCVDHODSON, P. D; WALLIS, R. H; DAVIES, J. I et al.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1136-1138, issn 0268-1242Article

Evidence for band-gap narrowing effects in Be-doped, p-p+ GaAs homojunction barriersCHUANG, H. L; DEMOULIN, P. D; KLAUSMEIER-BROWN, M. E et al.Journal of applied physics. 1988, Vol 64, Num 11, pp 6361-6364, issn 0021-8979Article

On the use of Thornber's augmented drift-diffusion equation for modeling GaAs devicesBLAKEY, P. A; BURDICK, S. A; SANDBORN, P. A et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1991-1994, issn 0018-9383Article

MOVPE of III/V semiconductors using nitrogen as the carrier gasHARDTDEGEN, H.SPIE proceedings series. 1998, pp 244-251, isbn 0-8194-2756-X, 2VolConference Paper

Microtomography observation of precipitates in semi-insulating GaAs materialsGALL, P; FILLARD, J. P; CASTAGNE, M et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 5161-5169, issn 0021-8979Article

Novel index semiconductor surfacesHENINI, Mohamed.Microelectronics journal. 1995, Vol 26, Num 8, issn 0959-8324, 168 p.Conference Proceedings

Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistorHORIO, K.Electronics Letters. 1989, Vol 25, Num 8, pp 547-549, issn 0013-5194, 3 p.Article

In situ grown Schottky gates on GaAs/AlGaAs heterojunctionsTIMMERING, C. E; LAGEMAAT, J. M; FOXON, C. T et al.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1139-1142, issn 0268-1242Article

Organometallic vapor phase epitaxy of AlGaAs/GaAs hetorojunction bipolar transistors using tertiarybutylarsineKIM, T. S; BAYARKTAROGLU, B; HENDERSON, T. S et al.Applied physics letters. 1991, Vol 58, Num 18, pp 1997-1999, issn 0003-6951, 3 p.Article

Clean electromigrated nanogaps imaged by transmission electron microscopySTRACHAN, Douglas R; SMITH, Deirdre E; FISCHBEIN, Michael D et al.Nano letters (Print). 2006, Vol 6, Num 3, pp 441-444, issn 1530-6984, 4 p.Article

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