kw.\*:("Concentración impureza")
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Cathodoluminescence des cristaux de KBr et KBr-Tl à 300 KPOPOV, A. I.Optika i spektroskopiâ. 1988, Vol 65, Num 6, pp 1389-1392, issn 0030-4034Article
Concentration effects in temperature quenching of impurity-center luminescenceYUROV, V. M; MURZAKHMETOV, M. K; KUKETAEV, T. A et al.Optika i spektroskopiâ. 1989, Vol 67, Num 6, pp 1398-1399, issn 0030-4034, 2 p.Article
The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profilesCARTER, G; KATARDJIEV, I. V; NOBES, M. J et al.Surface and interface analysis. 1989, Vol 14, Num 9, pp 511-523, issn 0142-2421, 13 p.Article
Edge-localized-mode -induced transport of impurity density, energy, and momentumWADE, M. R; BURRELL, K. H; LEONARD, A. W et al.Physical review letters. 2005, Vol 94, Num 22, pp 225001.1-225001.4, issn 0031-9007Article
Anomalous magnetocaloric effect and magnetoresistance in Ho(Ni,Fe)2 compoundsSINGH, Niraj K; AGARWAL, S; SURESH, K. G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014452.1-014452.6, issn 1098-0121Article
Concentration and depth measurements of boron in semiconductor materials using neutron depth profilingÜNLÜ, K; WEHRING, B. W; HOSSAIN, T. Z et al.SPIE proceedings series. 1997, pp 458-469, isbn 0-8194-2765-9Conference Paper
A kinetic model for crystal growth from aqueous solution in the presence of impurityKUBOTA, N; MULLIN, J. W.Journal of crystal growth. 1995, Vol 152, Num 3, pp 203-208, issn 0022-0248Article
Silicon gettering by segregationSACHELARIE, D; UNGUREANU, R; BADOIU, A et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 159-164, issn 0035-4066Article
Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under 18O fluxACHTNICH, T; BURRI, G; ILEGEMS, M et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2532-2536, issn 0734-2101, 5 p.Article
Ion concentrations in a binary liquid mixture: implications for wetting behaviorRIPPLE, D; FRANCK, C.Physical review. B, Condensed matter. 1989, Vol 40, Num 10, pp 7279-7280, issn 0163-1829, 2 p.Article
Simulation of range profiles for boron implantation into SiO2/Si and Si3N4/SiO2/Si targetsPOSSELT, M; FEUDEL, T; THÄTER, G et al.Applied physics. A, Solids and surfaces. 1990, Vol 51, Num 1, pp 1-5, issn 0721-7250Article
Annealing effects and generation of secondary phases in ZnO after high-dose transition metal implantationGEURTS, J; SCHUMM, M; KOERDEL, M et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 6, pp 1469-1471, issn 0370-1972, 3 p.Article
Extrinsic gettering effects on the oxygen precipitation in epitaxial wafersVERON, A; MIHAELA RADULESCU; OANEA, A et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 57-62, issn 0035-4066Article
High-temperature vacancy concentration in CuVAROTSOS, P; EFTAXIAS, K.Physical review. B, Condensed matter. 1989, Vol 40, Num 14, pp 9963-9964, issn 0163-1829, 2 p.Article
Hopping conduction in a two-dimensional impurity bandTIMP, G; FOWLER, A. B; HARTSTEIN, A et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8771-8785, issn 0163-1829Article
Jahn-Teller energy, bandwidth, and Curie temperature in Ni/Co-doped LaMnO3TANG, F. L; ZHANG, X.Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 41, pp 6507-6517, issn 0953-8984, 11 p.Article
Determination of the dopant concentration in the active layer of a double-heterostructure laser from capacitance measurementsPUZIN, I. B.Soviet physics. Semiconductors. 1991, Vol 25, Num 6, pp 608-612, issn 0038-5700Article
Hydrogen detection in hydrogenated amorphous silicon by ion-induced Auger spectroscopyHIRATA, G. A; FARIAS, M. H; COTA-ARAIZA, L et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2625-2627, issn 0734-2101, 3 p.Article
A Comparative Study of Purification Routes for As2Se3 Chalcogenide Glass : Advances in Glass Science and EngineeringDANTO, Sylvain; THOMPSON, Daniel; WACHTEL, Peter et al.International journal of applied glass science (Print). 2013, Vol 4, Num 1, pp 31-41, issn 2041-1286, 11 p.Article
Metallic spin-glasses beyond mean-field: an approach to the impurity-concentration dependence of the freezing temperatureCUERVO-REYES, E.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 13, issn 0953-8984, 136006.1-136006.9Article
Peculiarities of propagation of acoustic excitations through an imperfect 1D-superlatticeRUMYANTSEV, V. V; FEDOROV, S. A; GUMENNYK, K. V et al.Physica. B, Condensed matter. 2012, Vol 407, Num 18, pp 3727-3730, issn 0921-4526, 4 p.Article
Enhanced superconducting properties in FeCrxSeYADAV, Anil K; THAKUR, Ajay D; TOMY, C. V et al.Solid state communications. 2011, Vol 151, Num 7, pp 557-560, issn 0038-1098, 4 p.Article
Ferroelectric and piezoelectric properties of Aurivillius phase intergrowth ferroe!ectrics and the under!ying materia!s design : Advances in Electronic Materials and Devices in the Far EastYI, Z. G; LI, Y. X; LIU, Y et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 5, pp 1035-1040, issn 1862-6300, 6 p.Article
Influence of Mg doping on the dielectric properties of MgO-doped lithium niobateBAI, W. C; JIANG, L; ZHANG, H. Z et al.Physica. B, Condensed matter. 2011, Vol 406, Num 8, pp 1567-1570, issn 0921-4526, 4 p.Article
Optical absorption and photoluminescent studies of cerium-doped cobalt tungstate nanomaterialsNAIK, S. J; SUBRAMANIAN, Uma; TANGSALI, R. B et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 11, issn 0022-3727, 115404.1-115404.7Article