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Modelling the static property of carrier density variation in directly modulated lasersMUHAMMAD TAHER ABUELMA'ATTI.International journal of infrared and millimeter waves. 1989, Vol 10, Num 1, pp 63-71, issn 0195-9271, 9 p.Article
Concentration effects on charge transport in dye doped polymer light emitting diodesNUNZI, J.-M; GAUTIER-THIANCHE, E; LORIN, A et al.SPIE proceedings series. 1998, pp 302-309, isbn 0-8194-2720-9Conference Paper
Importance of self-induced carrier-density modulation in semiconductor lasersGRAY, G. R; AGRAWAL, G. P.IEEE photonics technology letters. 1992, Vol 4, Num 11, pp 1216-1219, issn 1041-1135Article
Carrier distribution in asymmetric dual quantum wellsLIN, C.-F; LEE, B.-L.SPIE proceedings series. 1998, pp 369-376, isbn 0-8194-2873-6Conference Paper
Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVDHUDAIT, M. K; MODAK, P; HARDIKAR, S et al.SPIE proceedings series. 1998, pp 312-316, isbn 0-8194-2756-X, 2VolConference Paper
A unified wide temperature range model for the energy GAP, the effective carrier mass and intrinsic concentration in siliconVANKEMMEL, R; SCHOENMAKER, W; DE MEYER, K et al.Solid-state electronics. 1993, Vol 36, Num 10, pp 1379-1384, issn 0038-1101Article
Photoelectric characteristics of materials Pb1-xSnxTe<In> subject to microwave and infrared emissionABRAHAMIAN, YU. A; GAVRILENKO, V. I; KRASYLNICK, Z. F et al.International journal of infrared and millimeter waves. 1993, Vol 14, Num 8, pp 1667-1678, issn 0195-9271Article
The sublinear relationship between index change and carrier density in 1.5 and 1.3 μm semiconductor lasersSHIN, S; SU, C. B.IEEE photonics technology letters. 1992, Vol 4, Num 6, pp 534-537Article
Electronic structure of the CuOx (x=4, 5 and 6) model clusters. II, Effects of the madelung potentialSEKINE, R; KAWAI, M; ADACHI, H et al.Molecular crystals and liquid crystals (1969). 1990, Vol 184, pp 395-399, issn 0026-8941Conference Paper
Defect-coupled diffusion at high concentrationsGILES, M. D.IEEE transactions on computer-aided design of integrated circuits and systems. 1989, Vol 8, Num 5, pp 460-467, issn 0278-0070, 8 p.Article
High temperature drift mobilities in hign resistivity siliconCASELLI, E; CABANILLAS, R; WAINSCHENKER, R et al.Physica status solidi. A. Applied research. 1986, Vol 98, Num 2, pp K179-K183, issn 0031-8965Article
Impurity-enhanced disordering in the pseudobinary semiconductor alloy AlxGa1-xAsKAMIJOH, T; HASHIMOTO, A; WATANABE, N et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 7281-7284, issn 0163-1829Article
Solution of a new nonlinear equation for the distribution of charge carriers in a semiconductorLIBOFF, R. L; SCHENTER, G. K.Physical review. B, Condensed matter. 1986, Vol 34, Num 10, pp 7063-7068, issn 0163-1829Article
Parallel channel to the Boltzmann band conduction: scattering y charged screened impurities in semiconductorsCAPEK, V.Physical review. B, Condensed matter. 1988, Vol 38, Num 18, pp 13426-13428, issn 0163-1829Article
Phototransport under the presence of a small steady-state photocarrier gratingYUAN-MIN LI.Physical review. B, Condensed matter. 1990, Vol 42, Num 14, pp 9025-9032, issn 0163-1829, 8 p.Article
Variation of the hopping exponent in disordered silicon MOSFETsFERRUS, T; GEORGE, R; BARNES, C. H. W et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 41, issn 0953-8984, 415226.1-415226.6Article
Analysis of localized recombination in quantum dotsSUMMERS, Huw D; PASK, Helen; BLOOD, Peter et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61151F.1-61151F.8, issn 0277-786X, isbn 0-8194-6157-1, 1VolConference Paper
Fermi energy and other related aspects in a parabolic band semiconductor under band tailingCHAKRABORTY, P. K; GHATAK, K. P.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 18, pp 2438-2441, issn 0022-3727Article
Electrical properties of n- and p-type doped epitaxial GaAs layers grown by OMVPEMODAK, P; HUDAIT, M. K; HARDIKAR, S et al.SPIE proceedings series. 1998, pp 336-340, isbn 0-8194-2756-X, 2VolConference Paper
A high-low emitter bipolar power transistorANG, S. S.Microelectronics journal. 1995, Vol 26, Num 1, pp 1-7, issn 0959-8324Article
A fully analytical partitioned-charge-based model for linearly-graded SiGe-base heterojunction bipolar transistorsKUO, J. B; LU, T. C.Solid-state electronics. 1994, Vol 37, Num 8, pp 1561-1566, issn 0038-1101Article
A D.C. intrinsic base resistance model considering resitivity modulation for arbitrarily doped transistorsWATERS, J. W; SUZUKI, K.Solid-state electronics. 1993, Vol 36, Num 4, pp 563-568, issn 0038-1101Article
A simple accurate expression of the reduced Fermi energy for any reduced carrier densityVAN CONG, H; DEBIAIS, G.Journal of applied physics. 1993, Vol 73, Num 3, pp 1545-1546, issn 0021-8979Article
Influence of vacancies with a negative correlation energy on the free carriers concentration in p-type SiANAGNOSTOPOULOS, A. N; KYRIAKOS, D. S.Solid state communications. 1993, Vol 86, Num 5, pp 317-321, issn 0038-1098Article
Low noise ohmic contacts on n and p type GaSb : Microelectronics and optoelectronics III-VROLLAND, M; GAILLARD, S; VILLEMAIN, E et al.Journal de physique. III (Print). 1993, Vol 3, Num 9, pp 1825-1832, issn 1155-4320Conference Paper