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Switch-on transient of shallow-profile bipolar transistorsDUAN-LEE TANG, D.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2224-2226, issn 0018-9383Article

Concentration effects in temperature quenching of impurity-center luminescenceYUROV, V. M; MURZAKHMETOV, M. K; KUKETAEV, T. A et al.Optika i spektroskopiâ. 1989, Vol 67, Num 6, pp 1398-1399, issn 0030-4034, 2 p.Article

The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profilesCARTER, G; KATARDJIEV, I. V; NOBES, M. J et al.Surface and interface analysis. 1989, Vol 14, Num 9, pp 511-523, issn 0142-2421, 13 p.Article

Particularités de la cinétique des défauts radiatifs dans les semiconducteurs en présence d'atomes d'impuretéVERNER, I. V; TSUKANOV, V. V.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 11, pp 2236-2238, issn 0044-4642Article

The role of impurity dispersion and hardness anisotropy studies in NaCl:Sm crystalsNARASIMHA REDDY, K; SUBBA RAO, U. V; HARI BABU, V et al.Crystal research and technology (1979). 1984, Vol 19, Num 1, pp 121-126, issn 0232-1300Article

Edge-localized-mode -induced transport of impurity density, energy, and momentumWADE, M. R; BURRELL, K. H; LEONARD, A. W et al.Physical review letters. 2005, Vol 94, Num 22, pp 225001.1-225001.4, issn 0031-9007Article

Out-diffusion of silver from InPTUCK, B; CHAOUI, R.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 2, pp 379-385, issn 0022-3727Article

Study of impurity profiles in siliconERANNA, G; KAKATI, D.Journal of the Electrochemical Society. 1983, Vol 130, Num 12, pp 2502-2504, issn 0013-4651Article

Théorie des jonctions SNS avec des impuretés non magnétiques de concentration arbitraire pour les températures voisines de la température critiqueSAVCHENKO, S. M; SVIDZINSKIJ, A. V.Teoretičeskaâ i matematičeskaâ fizika. 1983, Vol 56, Num 2, pp 288-300, issn 0564-6162Article

A formula for the concentration profile of a buried layer with back diffusionSHIER, J. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 6, pp 1142-1143, issn 0018-9383Article

Ballistic and overshoot electron transport in bulk semiconductors and in submicronic devicesGHIS, A; CONSTANT, E; BOITTIAUX, B et al.Journal of applied physics. 1983, Vol 54, Num 1, pp 214-221, issn 0021-8979Article

Concentration-fluctuation model of a doped semiconductor in the nonmetallic regime. II: Excitation spectrumRIKLUND, R; CHAO, K. A.Physical review. B, Condensed matter. 1984, Vol 29, Num 6, pp 3456-3462, issn 0163-1829Article

On models of phosphorus diffusion in siliconHU, S. M; FAHEY, P; DUTTON, R. W et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 6912-6922, issn 0021-8979Article

Oxygen and carbon measurements on silicon slices by the IR methodSTALLHOFER, P; HUBER, D.Solid state technology. 1983, Vol 26, Num 8, pp 233-237, issn 0038-111XArticle

ON THE TECHNIQUE AND EVALUATION OF ANGLE-BEVELING SILICON EPITAXIAL LAYERS.SEVERIN PJ; BULLE H; POODT G et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 440-443; BIBL. 12 REF.Article

Anomalous magnetocaloric effect and magnetoresistance in Ho(Ni,Fe)₂ compoundsSINGH, Niraj K; AGARWAL, S; SURESH, K. G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014452.1-014452.6, issn 1098-0121Article

Concentration and depth measurements of boron in semiconductor materials using neutron depth profilingÜNLÜ, K; WEHRING, B. W; HOSSAIN, T. Z et al.SPIE proceedings series. 1997, pp 458-469, isbn 0-8194-2765-9Conference Paper

A kinetic model for crystal growth from aqueous solution in the presence of impurityKUBOTA, N; MULLIN, J. W.Journal of crystal growth. 1995, Vol 152, Num 3, pp 203-208, issn 0022-0248Article

Silicon gettering by segregationSACHELARIE, D; UNGUREANU, R; BADOIU, A et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 159-164, issn 0035-4066Article

Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under ^₁8O fluxACHTNICH, T; BURRI, G; ILEGEMS, M et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 4, pp 2532-2536, issn 0734-2101, 5 p.Article

Ion concentrations in a binary liquid mixture: implications for wetting behaviorRIPPLE, D; FRANCK, C.Physical review. B, Condensed matter. 1989, Vol 40, Num 10, pp 7279-7280, issn 0163-1829, 2 p.Article

Spectral characteristics of the impurity band in the structural disorder modelLIFSHITZ, I. M; GREDESKUL, S. A; PASTUR, L. A et al.Journal of statistical physics. 1985, Vol 38, Num 1-2, pp 37-63, issn 0022-4715Article

Température de Curie d'un ferromagnétique à faible concentration d'impuretés à liaisons fortesZABOROV, A. V.Fizika metallov i metallovedenie. 1985, Vol 60, Num 3, pp 462-466, issn 0015-3230Article

Auger electron spectroscopy studies of calcium containing carbon surfacesFREUND, H; KELEMEN, S. R.Applications of surface science. 1984, Vol 20, Num 3, pp 267-278, issn 0378-5963Article