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High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxyRAJAVEL, R. D; JAMBA, D. M; WU, O. K et al.Journal of crystal growth. 1997, Vol 175-76, pp 653-658, issn 0022-0248, 1Conference Paper

Structural approach to II-VI / GaAs heterostructures : precursor states and strain accomodation in the early stages of MBE growthETGENS, V. H; PINCHAUX, R; SAUVAGE-SIMKIN, M et al.Applied surface science. 1992, Vol 56-58, pp 597-603, issn 0169-4332, bConference Paper

Photoelectrical and optical properties of Pb1-xMnxTe(Ga) epitaxial filmsNURIYEV, H. R; FARZALIYEV, S. S; FARADJEV, N. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 246-249, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 4 p.Conference Paper

Applications of MBE grown PHEMTsDILORENZO, J. V; LAUTERWASSER, B; ZAITLIN, M. P et al.Journal of crystal growth. 1997, Vol 175-76, pp 1-7, issn 0022-0248, 1Conference Paper

A simple molecular beam system for surface reactivity studiesBOWKER, M; PUDNEY, P. D. A; BARNES, C. J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 816-820, issn 0734-2101Article

Ion channeling analysis of a Si1-xGex(As)/Si strained layerMOORE, J. A; LENNARD, W. N; MASSOUMI, G. R et al.Applied physics letters. 1989, Vol 54, Num 25, pp 2571-2573, issn 0003-6951, 3 p.Article

Optical simulation of the beam flux distribution from molecular beam epitaxy effusion sourcesMICHALAK, L; ADAMCZYK, B; HERMAN, M. A et al.Vacuum. 1992, Vol 43, Num 4, pp 341-345, issn 0042-207XArticle

Radiation Sievë effect during epitaxy from low energy ion-molecular flowBUDREVICH, A. G; LYUTOVICH, A. S; OKSENGENDLER, B. L et al.Physica status solidi. A. Applied research. 1989, Vol 114, Num 2, pp K163-K166, issn 0031-8965Article

Blue-light emission from ZnSTe-based EL devicesSOU, I. K; MAO, J; MA, Z et al.Journal of crystal growth. 1997, Vol 175-76, pp 632-636, issn 0022-0248, 1Conference Paper

Effects of morphology on photoemission oscillation measurements during growth of resonant tunneling devicesZINCK, J. J; CHOW, D. H.Journal of crystal growth. 1997, Vol 175-76, pp 323-327, issn 0022-0248, 1Conference Paper

II-VI light-emitting devices based on beryllium chalcogenidesFISCHER, F; LANDWEHR, G; LITZ, T et al.Journal of crystal growth. 1997, Vol 175-76, pp 532-540, issn 0022-0248, 1Conference Paper

Le paradoxe de Zénon d'Elée = Zenon Elee paradoxELKINANI, I; VILLAIN, J.Solid state communications. 1993, Vol 87, Num 2, pp 105-108, issn 0038-1098Article

Ultrahigh vacuum in situ fabrication of three-dimensional semiconductor structures using a combination of particle beamsJONES, G. A. C; RITCHIE, D. A; LINFIELD, E. H et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2834-2837, issn 1071-1023Conference Paper

Heavily boron-doped Si layers grown below 700˚C by molecular beam epitaxy using a HBO2 sourceLIN, T. L; FATHAUER, R. W; GRUNTHANER, P. J et al.Applied physics letters. 1989, Vol 55, Num 8, pp 795-797, issn 0003-6951, 3 p.Article

Hétérojonctions AlGaAs/GaAs à effet dimensionnel quantique, de rendement quantique de recombinaison radiative égal à 100%, obtenues par la méthode d'épitaxie de faisceaux moléculairesALFEROV, ZH. I; GARBUZOV, D. Z; DENISOV, A. G et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 12, pp 2105-2110, issn 0015-3222Article

Growth of strained-layer semiconductor-metal-semiconductor heterostructuresTUNG, R. T; GIBSON, J. M; LEVI, A. F. J et al.Applied physics letters. 1986, Vol 48, Num 19, pp 1264-1266, issn 0003-6951Article

Improved molecular beam epitaxial growth of InP using solid sourcesROBERTS, J. S; CLAXTON, P. A; DAVID, J. P. R et al.Electronics Letters. 1986, Vol 22, Num 10, pp 506-507, issn 0013-5194Article

Study of cluster-size effects on film condensationAOKI, I; KOTAKE, S.Heat transfer. Japanese research. 1995, Vol 24, Num 6, pp 551-561, issn 0096-0802Article

High purity GaAs and AlxGa1-x grown by metalorganic molecular beam epitaxyFURUHATA, N; OKAMOTO, A; HOSHINO, H et al.Journal of crystal growth. 1990, Vol 102, Num 4, pp 814-818, issn 0022-0248Article

Critère statistique de détermination de la température d'épitaxie par condensation d'un faisceau moléculaireBUDREVICH, A. G; LYUTOVICH, A. S; OKSENGENDLER, B. L et al.Kristallografiâ. 1989, Vol 34, Num 5, pp 1321-1322, issn 0023-4761Article

Hydrogen surface coverage: raising the silicon epitaxial growth temperatureWOLFF, S. H; WAGNER, S; BEAN, J. C et al.Applied physics letters. 1989, Vol 55, Num 19, pp 2017-2019, issn 0003-6951, 3 p.Article

Hydride cracker nozzle design for gas source molecular beam epitaxySHIRALAGI, K. T; CHOI, K. Y; DROOPAD, R et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 1, pp 46-50, issn 0734-2101Article

X-ray characterization of InAs laser structures grown by molecular beam epitaxyMAZUELAS, A; MELENDEZ, J; DOTOR, M. L et al.Journal of applied physics. 1992, Vol 72, Num 6, pp 2528-2530, issn 0021-8979Article

Ca0.5Sr0.5F2/GaAs (100) for epitaxial regrowth and electron-beam patterningHORNG, S; HIROSE, Y; KAHN, A et al.Applied surface science. 1992, Vol 56-58, pp 855-860, issn 0169-4332, bConference Paper

Light simulation of molecular beam epitaxyMICHALAK, L; ADAMCZYK, B.Vacuum. 1991, Vol 42, Num 12, pp 735-739, issn 0042-207XArticle

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