Chemical beam epitaxy : a child of surface scienceLÜTH, H.Surface science. 1994, Vol 299-300, Num 1-3, pp 867-877, issn 0039-6028Article

Recent progress in multi-wafer CBE systemsANDO, H.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 16-22, issn 0022-0248Conference Paper

Quantum well electroabsorption modulators at 1.55 μm using single-step selective area chemical beam epitaxial growthCHEN, Y; ZUCKER, J. E; CHIU, T. H et al.Applied physics letters. 1992, Vol 61, Num 1, pp 10-12, issn 0003-6951Article

Pyrolysis of tertiarybutylphosphine at low pressureHILL, C. W; STRINGFELLOW, G. B; SADWICK, L. P et al.Journal of electronic materials. 1995, Vol 24, Num 6, pp 731-734, issn 0361-5235Article

Interrupted cycle chemical beam epitaxy of gallium phosphide on silicon with or without photon assistanceKELLIHER, J. T; MILLER, A. E; DIETZ, N et al.Applied surface science. 1995, Vol 86, Num 1-4, pp 453-456, issn 0169-4332Conference Paper

1.3 μm decoupled confinement heterostructure lasers grown by chemical beam epitaxyHAUSSER, S; HARDER, C. S; MEIER, H. P et al.Applied physics letters. 1993, Vol 62, Num 7, pp 663-665, issn 0003-6951Article

Growth and in situ ellipsometric analysis of Si_1-xGe_x alloys deposited by chemical beam epitaxyBOUCAUD, P; GLOWACKI, F; CAMPIDELLI, Y et al.Journal of electronic materials. 1994, Vol 23, Num 6, pp 565-568, issn 0361-5235Article

Advances in the understanding of chemical beam epitaxy growth mechanismsMARTIN, T; FREER, R. W; WHITEHOUSE, C. R et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 69-77, issn 0022-0248Conference Paper

Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgalliumSEONG-JU PARK; JEONG-RAE RO; JAE-KI SIM et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 143-147, issn 0022-0248Conference Paper

Model for reflection high-energy electron diffraction intensity recovery during GaP growth in laser-triggered chemical beam epitaxyVACCARO, P; HASHIMOTO, T; YOSHIMOTO, M et al.Applied physics letters. 1993, Vol 63, Num 26, pp 3601-3603, issn 0003-6951Article

Selective epitaxy of GaAs on indium oxide mask followed by in situ removal of the maskOZASA, K; TIANCHUN YE; AOYAGI, Y et al.Applied physics letters. 1993, Vol 63, Num 12, pp 1634-1636, issn 0003-6951Article

Growth of epitaxial (100) GaAs films using the single-source precursor [Me₂Ga(μ-t-Bu₂As)]₂MILLER, J. E; EKERDT, J. G.Chemistry of materials. 1992, Vol 4, Num 1, pp 7-9, issn 0897-4756Article

Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxyARMSTRONG, J. V; FARRELL, T; BOYD, A et al.Applied physics letters. 1992, Vol 61, Num 23, pp 2770-2772, issn 0003-6951Article

Selective area epitaxy and growth over patterned substrates by chemical beam epitaxyTSANG, W. T; YANG, L; WU, M. C et al.Electronics Letters. 1991, Vol 27, Num 1, pp 3-5, issn 0013-5194, 3 p.Article

First epitaxial InP tunnel junctions grown by chemical beam epitaxyVILELA, M. F; MEDELCI, N; BENSAOULA, A et al.Journal of crystal growth. 1996, Vol 164, Num 1-4, pp 465-469, issn 0022-0248Conference Paper

Growth condition dependence of carbon reduction in GaAs chemical beam epitaxy using trisdimethylamino-arsine and trimethylgalliumISHIKURA, K; TAKEUCHI, A; KURIHARA, M et al.Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp L494-L496, issn 0021-4922, 2Article

Monolayer chemical beam etchingTSANG, W. T; CHIU, T. H; KAPRE, R. M et al.Journal of crystal growth. 1994, Vol 135, Num 3-4, pp 377-382, issn 0022-0248Article

Chemical beam epitaxial growth of GaAs from tertiarybutylarsine and triethylgallium precursorsAIT-LHOUSS, M; CASTANO, J. L; PIQUERAS, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 155-157, issn 0921-5107Conference Paper

InGaAs/InP hot electron transistors grown by chemical beam epitaxyCHEN, W. L; SUN, J. P; HADDAD, G. I et al.Applied physics letters. 1992, Vol 61, Num 2, pp 189-191, issn 0003-6951Article

Strained-layer InGaAs quantum well lasers emitting at 1.5 μm grown by chemical beam epitaxySUGIURA, H; NOGUCHI, Y; IGA, R et al.Applied physics letters. 1992, Vol 61, Num 3, pp 318-320, issn 0003-6951Article

1.5 μm wavelenght InGaAs/InGaAsP distributed feedback multi-quantum well lasers grown by chemical beam epitaxyTSANG, W. T; CHOA, F. S; WU, M. C et al.Applied physics letters. 1991, Vol 59, Num 19, pp 2375-2377, issn 0003-6951Article

Studies of the surface reactivity of novel hydride adduct precursors for CBE growth of III-V compoundsFOORD, J. S; MURRELL, A. J; O'HARE, D et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, issn 0022-0248, p. 1040Conference Paper

In-situ reflection high-energy electron diffraction observation of laser-triggered GaP growth in chemical beam epitaxyYOSHIMOTO, M; HASHIMOTO, T; VACCARO, P et al.Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 89-93, issn 0022-0248Conference Paper

Low-threshold InGaAs strained-layer quantum wells lasers (λ-0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxyTSANG, W. T; KAPRE, R; WU, M. C et al.Applied physics letters. 1992, Vol 61, Num 7, pp 755-757, issn 0003-6951Article

Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditionsDIETZ, N; ROSSOW, U; ASPNES, D. E et al.Applied surface science. 1996, Vol 102, pp 47-51, issn 0169-4332Conference Paper