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High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxyRAJAVEL, R. D; JAMBA, D. M; WU, O. K et al.Journal of crystal growth. 1997, Vol 175-76, pp 653-658, issn 0022-0248, 1Conference Paper

Surface treatment of (1102) sapphire and (100) silicon for molecular beam epitaxial growthCHRISTOU, A; RICHMOND, E. D; WILKINS, B. R et al.Applied physics letters. 1984, Vol 44, Num 8, pp 796-798, issn 0003-6951Article

Structural approach to II-VI / GaAs heterostructures : precursor states and strain accomodation in the early stages of MBE growthETGENS, V. H; PINCHAUX, R; SAUVAGE-SIMKIN, M et al.Applied surface science. 1992, Vol 56-58, pp 597-603, issn 0169-4332, bConference Paper

Study of cluster-size effects on film condensationAOKI, I; KOTAKE, S.Heat transfer. Japanese research. 1995, Vol 24, Num 6, pp 551-561, issn 0096-0802Article

High purity GaAs and Al_xGa_1-x grown by metalorganic molecular beam epitaxyFURUHATA, N; OKAMOTO, A; HOSHINO, H et al.Journal of crystal growth. 1990, Vol 102, Num 4, pp 814-818, issn 0022-0248Article

Critère statistique de détermination de la température d'épitaxie par condensation d'un faisceau moléculaireBUDREVICH, A. G; LYUTOVICH, A. S; OKSENGENDLER, B. L et al.Kristallografiâ. 1989, Vol 34, Num 5, pp 1321-1322, issn 0023-4761Article

Hydrogen surface coverage: raising the silicon epitaxial growth temperatureWOLFF, S. H; WAGNER, S; BEAN, J. C et al.Applied physics letters. 1989, Vol 55, Num 19, pp 2017-2019, issn 0003-6951, 3 p.Article

CW IMPATTs made from silicon molecular beam epitaxy materialLUY, J. F; KIBBEL, H; KASPER, E et al.International journal of infrared and millimeter waves. 1986, Vol 7, Num 3, pp 305-315, issn 0195-9271Article

Molecular beam epitaxy of diluted magnetic semiconductor (Cd_1-xMn_xTe) superlatticesKOLODZIEJSKI, L. A; BONSETT, T. C; GUNSHOR, R. L et al.Applied physics letters. 1984, Vol 45, Num 4, pp 440-442, issn 0003-6951Article

Optical simulation of the beam flux distribution from molecular beam epitaxy effusion sourcesMICHALAK, L; ADAMCZYK, B; HERMAN, M. A et al.Vacuum. 1992, Vol 43, Num 4, pp 341-345, issn 0042-207XArticle

Radiation Sievë effect during epitaxy from low energy ion-molecular flowBUDREVICH, A. G; LYUTOVICH, A. S; OKSENGENDLER, B. L et al.Physica status solidi. A. Applied research. 1989, Vol 114, Num 2, pp K163-K166, issn 0031-8965Article

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesGOLDSTEIN, L; GLAS, F; MARZIN, J. Y et al.Applied physics letters. 1985, Vol 47, Num 10, pp 1099-1101, issn 0003-6951Article

Lateral p-n junction formation in GaAs molecular beam epitaxy by crystal plane dependent dopingMILLER, D. L.Applied physics letters. 1985, Vol 47, Num 12, pp 1309-1311, issn 0003-6951Article

GaAs growth using an MBE system connected with a 100 kV UHV maskless ion implanterTAKAMORI, A; MIYAUCHI, E; ARIMOTO, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp L599-L601, issn 0021-4922, 2Article

Photoelectrical and optical properties of Pb1-xMnxTe(Ga) epitaxial filmsNURIYEV, H. R; FARZALIYEV, S. S; FARADJEV, N. V et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 246-249, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 4 p.Conference Paper

Applications of MBE grown PHEMTsDILORENZO, J. V; LAUTERWASSER, B; ZAITLIN, M. P et al.Journal of crystal growth. 1997, Vol 175-76, pp 1-7, issn 0022-0248, 1Conference Paper

A simple molecular beam system for surface reactivity studiesBOWKER, M; PUDNEY, P. D. A; BARNES, C. J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 816-820, issn 0734-2101Article

Ion channeling analysis of a Si_1-xGe_x(As)/Si strained layerMOORE, J. A; LENNARD, W. N; MASSOUMI, G. R et al.Applied physics letters. 1989, Vol 54, Num 25, pp 2571-2573, issn 0003-6951, 3 p.Article

AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxyVINA, L; WANG, W. I.Applied physics letters. 1986, Vol 48, Num 1, pp 36-37, issn 0003-6951Article

Relation between growth conditions and reconstruction on InAs during molecular beam epitaxy using an As₂ sourceHANCOCK, B. R; KROEMER, H.Journal of applied physics. 1984, Vol 55, Num 12, pp 4239-4243, issn 0021-8979Article

Millimeter-wave GaAs distributed IMPATT diodesBAYRAKTAROGLU, B; SHIH, H. D.IEEE electron device letters. 1983, Vol 4, Num 11, pp 393-395, issn 0741-3106Article

Blue-light emission from ZnSTe-based EL devicesSOU, I. K; MAO, J; MA, Z et al.Journal of crystal growth. 1997, Vol 175-76, pp 632-636, issn 0022-0248, 1Conference Paper

Effects of morphology on photoemission oscillation measurements during growth of resonant tunneling devicesZINCK, J. J; CHOW, D. H.Journal of crystal growth. 1997, Vol 175-76, pp 323-327, issn 0022-0248, 1Conference Paper

II-VI light-emitting devices based on beryllium chalcogenidesFISCHER, F; LANDWEHR, G; LITZ, T et al.Journal of crystal growth. 1997, Vol 175-76, pp 532-540, issn 0022-0248, 1Conference Paper