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Largeur des niveaux de Landau dans une bande finieKHENE, F. EH; SHIROKOV, M. I; YASHIN, G. YU et al.Fizika tverdogo tela. 1985, Vol 27, Num 3, pp 636-644, issn 0367-3294Article

Effective masses in Sn-doped Ga1-xAlxAs(X<0.33) determined by the Shubnikov-de Haas effectEL JANI, B; GIBART, P; PORTAL, J. C et al.Journal of applied physics. 1985, Vol 58, Num 9, pp 3481-3484, issn 0021-8979Article

Influence de la largeur finie de la bande de conduction sur les effets galvanomagnétiques dans les semiconducteursPOLYANOVSKIJ, V. M.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 3, pp 549-551, issn 0015-3222Article

ETUDE EXPERIMENTALE DE L'ANISOTROPIE DU SPECTRE D'ENERGIE DES ELECTRONS DANS INSB NAGAFONOV VG; VALOV NM; RYVKIN BS et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 10; PP. 1991-1995; BIBL. 11 REF.Article

Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors With Ultrathin Oxides and High-k DielectricsCHEN, Chih-Hao; CHUANG, Kai-Chieh; HWU, Jenn-Gwo et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1262-1268, issn 0018-9383, 7 p.Article

THEORETICAL HIGH-STRESS OPTICAL BIREFRINGENCE AND PIEZORESISTANCE IN HEAVILY DOPED GERMANIUM. ARGUMENTS AGAINST BAND TAILINGSERNELIUS BE.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 10; PP. 6234-6245; BIBL. 18 REF.Article

PHOTOLUMINESCENCE FROM MG-IMPLANTED, EPITAXIAL, AND SEMI-INSULATING INPPOMRENKE GS; PARK YS; HENGEHOLD RL et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 969-977; BIBL. 15 REF.Article

BAND STRUCTURE OF ACTINIUM AND THE EFFECT OF CORRELATIONIYAKUTTI K; DAKSHINAMOORTHY M; ASOKAMANI R et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 5; PP. 555-557; BIBL. 9 REF.Article

CONDUCTIVITE DANS LA BANDE D- DE GE NGINZBURG LP.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 2; PP. 338-341; BIBL. 14 REF.Article

Valence and conduction band-edges : charge densities in diamondAOURAG, H; MERAD, G; KHELIFA, B et al.Materials chemistry and physics. 1991, Vol 28, Num 4, pp 431-435, issn 0254-0584Article

Intersubband absorption in Ga1-xAlxSb/AlSb superlattices for infrared detectionXIE, H; PIAO, J; KATZ, J et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3152-3156, issn 0021-8979Article

Ionisation des centres d'impureté dans les semiconducteurs à bande étroite par un champ électrique alternatifKRYUCHKOV, S. V; SYRODOEV, G. A.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1695-1697, issn 0015-3222Article

First observation of an extremely large-dipole infared transition within the conduction band of a GaAs quantum wellWEST, L. C; EGLASH, S. J.Applied physics letters. 1985, Vol 46, Num 12, pp 1156-1158, issn 0003-6951Article

Interlayer interaction in the conduction bands of layered transition-metal dichalcogenides studied by inverse photoemissionSTRAUB, D; SKIBOWSKI, M; HIMPSEL, F. J et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 12, pp 8254-8256, issn 0163-1829Article

Diffusion des électrons dans un semiconducteur sans bande interditeABLYAZOV, N. N; GEL'MONT, B. L; RAJKH, M. EH et al.ZETF. Pis′ma v redakciû. 1984, Vol 87, Num 2, pp 646-656, issn 0044-4510Article

STRUCTURE DE LA BANDE DE CONDUCTION DES SYSTEMES A VALENCE INTERMEDIAIREDRUZHININ AA.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 2; PP. 530-538; BIBL. 16 REF.Article

Impact of Zn1-xMgxO:Al transparent electrode for buffer-less Cu(In, Ga) Se2 solar cellsKUWAHATA, Yoshihiro; MINEMOTO, Takashi.Renewable energy. 2014, Vol 65, pp 113-116, issn 0960-1481, 4 p.Conference Paper

Charge non-neutrality in the quantum well region of a GaAs-AlGaAs intersubband 9 μm detectorLIU, H. C; BUCHANAN, M; WASILEWSKI, Z. R et al.Applied physics letters. 1991, Vol 58, Num 10, pp 1059-1061, issn 0003-6951Article

Threshold of ion-induced kinetic electron emission from a clean metal surfaceLAKITS, G; AUMAYR, F; HEIM, M et al.Physical review. A, Atomic, molecular, and optical physics. 1990, Vol 42, Num 9, pp 5780-5783Article

Relativistic and core-relaxation effects on the energy bands of gallium arsenide and germaniumBACHELET, G. B; CHRISTENSEN, N. E.Physical review. B, Condensed matter. 1985, Vol 31, Num 2, pp 879-887, issn 0163-1829Article

Constant final state spectroscopy of the interlayer state in graphiteLAW, A. R; JOHNSON, M. T; HUGHES, H. P et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 11, pp L297-L302, issn 0022-3719Article

Evolution of the Pt conduction band in a solid Xe layerRAAEN, S; STRONGIN, M.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 4289-4291, issn 0163-1829Article

Experimental study of the GaP-Si interfacePERFETTI, P; PATELLA, F; SETTE, F et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 8, pp 4533-4539, issn 0163-1829Article

Conduction mechanisms in erbium silicide Schottky diodesUNEWISSE, M. H; STOREY, J. W. V.Journal of applied physics. 1993, Vol 73, Num 8, pp 3873-3879, issn 0021-8979Article

Minority carrier capture cross section of the EL2 defect in GaAsZAIDI, M. A; MAAREF, H; BOURGOIN, J. C et al.Applied physics letters. 1992, Vol 61, Num 20, pp 2452-2454, issn 0003-6951Article

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