Conductivité par une bande d'états localisés dans les solutions solides Pb1-xSnxSe irradiées par électronsSKIPETROV, E. P; DUBKOV, V. P; MUSALITIN, A. M et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1785-1791, issn 0015-3222Article

Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum wellsNODA, S; UEMURA, T; YAMASHITA, T et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 2, pp 493-500, issn 0018-9197Article

Synthèse d'oligomères de rangs 6 et 8 du poly-(paraphénylène) dopage chimique de type N et caractérisations spectroscopiques = PPP oligomer synthesis with polymerization degree equal to 6 and 8 chemical N doping and spectroscopic characterizationsSimonneau, Antony; Froyer, G.1996, 16 p.Thesis

Formation of hydrogen molecules as a result to hydrogenation of n-type gallium arsenideRYTOVA, N. S.Soviet physics. Semiconductors. 1991, Vol 25, Num 6, pp 650-651, issn 0038-5700Article

n⁺-Polysilicon etching in CCl₄/He discharges: characterization and modelingGOGOLIDES, E; SAWIN, H. H.Journal of the Electrochemical Society. 1989, Vol 136, Num 4, pp 1147-1154, issn 0013-4651, 8 p.Article

A unified analysis on hot carrier generation in p-channel and n-channel MOSFET'sSAITO, K; YOSHII, A.Japanese journal of applied physics. 1988, Vol 27, Num 12, pp L2398-L2400, issn 0021-4922, 2Article

Modulated light studies of the electrochemistry of semiconductors: theory and experimentALBERY, W. J; BARTLETT, P. N; WILDE, C. P et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 10, pp 2486-2491, issn 0013-4651Article

Electronic properties of C₆₀ thin filmsMISHORI, B; KATZ, E. A; FAIMAN, D et al.Fullerene science and technology. 1998, Vol 6, Num 1, pp 113-124, issn 1064-122XArticle

A low cost metallization scheme for double sided buried contact silicon solar cellsEBONG, A. U; TAOUK, M; WENHAM, S. R et al.Solar energy materials and solar cells. 1994, Vol 31, Num 4, pp 499-507, issn 0927-0248Article

Photoelectrochemical etching of n-InP producing antireflecting structures for solar cellsSOLTZ, D; CESCATO, L; DECKER, F et al.Solar energy materials and solar cells. 1992, Vol 25, Num 1-2, pp 179-189, issn 0927-0248Article

Influence of doping density and deposition technology on ohmic contacts to n-type gallium arsenideMAK, L. K; ROGERS, C. M; NORTHROP, D. C et al.Semiconductor science and technology. 1991, Vol 6, Num 4, pp 268-272, issn 0268-1242Article

Thermal stability of ohnic contacts to n-GaAs formed by scanned electron beam processingPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 4, pp 618-624, issn 0734-211X, 7 p.Article

Anomalous behaviour of N-channel MOS transistor characteristics in the temperature range 4.2-14 KROCOFYLLOU, E; NASSIOPOULOS, A. G; TSAMAKIS, D et al.Solid-state electronics. 1989, Vol 32, Num 8, pp 603-605, issn 0038-1101Article

Magnétostriction du semiconducteur ferromagnétique HgCr2Se4VIKTORAVICHYUS, V.S; GALDIKAS, A.P; GREBINSKIJ, S.I et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 271-272, issn 0367-3294Article

Comparison of drain structures in n-channel MOSFET'sMIKOSHIBA, H; HORIUCHI, T; HAMANO, K et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 1, pp 140-144, issn 0018-9383Article

Photoelectrochemical behavior of n-type porous-Si electrodesKOSHIDA, N; KOYAMA, H; KIUCHI, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp 1069-1072, issn 0021-4922, 1Article

Material on the basis of PbTe for p - branches of thermoelectric coolersAGAYEV, Z. F; ALLAHVERDIYEV, E. A; MURTUZOV, G. M et al.SPIE proceedings series. 2003, pp 501-503, isbn 0-8194-4986-5, 3 p.Conference Paper

Mechanism of frequency conversion in an n-type InSb mixerGERSHENZON, E. M; GRACHEV, S. A; LITVAK-GORSKAYA, L. B et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 11, pp 1196-1204, issn 0038-5700Article

Influence d'une corrélation dans la distribution des impuretés dopantes sur le spectre de la luminescence limite de GaAs fortement dopéDOMANEVSKIJ, D. S; ZHOKHOVETS, S. V.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 4, pp 693-697, issn 0015-3222Article

Light-induced oxidative deposition of polypyrrole on the back surface in the dark of n-type silicon wafer photocatalystsYONEYAMA, H; SHOJI, Y; SUZUKI, K et al.Bulletin of the Chemical Society of Japan. 1989, Vol 62, Num 6, pp 1764-1770, issn 0009-2673, 7 p.Article

Elaboration, caractérisation et étude photoélectrochimique de sélénure de tungstène monocristallin et en couches mincesAzaiez Choukou, Chiraz; Claverie, Jean.1988, 171 p.Thesis

A study of channel avalanche breakdown in scaled n-MOSFET'sLAUX, S. E; GAENSSLEN, F. H.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 5, pp 1066-1073, issn 0018-9383, 2Article

Contribution of dynamic charging effects into dopant contrast mechanisms in siliconCHAKK, Yuli; HORVITZ, Dror.Journal of materials science. 2006, Vol 41, Num 14, pp 4554-4560, issn 0022-2461, 7 p.Conference Paper

Electrical, thermoelectric and thermophysical properties of hornet cuticleGALUSHKO, D; ERMAKOV, N; KARPOVSKI, M et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 286-289, issn 0268-1242, 4 p.Article

Single Electronic Traps in Tin and Zinc OxidesGRISHIN, M. V; GATIN, A. K; DOKHLIKOVA, N. V et al.Nanotechnologies in Russia (Print). 2014, Vol 9, Num 3-4, pp 151-156, issn 1995-0780, 6 p.Article