Effects of lightly doped drain structure with optimum ion dose on p-channel MOSFET'sKAGA, T; SAKAI, Y.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2384-2390, issn 0018-9383Article

Continuous wavelength tuning of inter-valence-band laser oscillation in p-type germanium over range of 80-120 μmKOMIYAMA, S; MORITA, H; HOSAKO, I et al.Japanese journal of applied physics. 1993, Vol 32, Num 11A, pp 4987-4991, issn 0021-4922, 1Article

The effect of gate-oxide process variations on the long-term fading of PMOS dosimetersKELLEHER, A; MCDONNELL, N; O'NEILL, B et al.Sensors and actuators. A, Physical. 1993, Vol 37-38, pp 370-374, issn 0924-4247Conference Paper

Photo-assisted etching of p-Type semiconductorsVAN DE VEN, J; NABBEN, H. J. P.Journal of the Electrochemical Society. 1991, Vol 138, Num 11, pp 3401-3406, issn 0013-4651Article

Simplified chemical deposition technique for good quality SnS thin filmsNAIR, M. T. S; NAIR, P. K.Semiconductor science and technology. 1991, Vol 6, Num 2, pp 132-134, issn 0268-1242Article

Décompositions de l'énergie des électrons secondaires émis par l'arséniure de gallium avec l'affinité électronique négativeANDRONOV, A.N; STUCHINSKIJ, G.B; YANYUSHKIN, E.I et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 23-30, issn 0367-3294Article

Effet photovoltaïque dans une hétérojonction à base de ZnSnAs2 de type pRUD, YU. V; TAIROV, M. A.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 8, pp 1586-1588, issn 0044-4642Article

Synthesis of Unstable Colloidal Inorganic Nanocrystals through the Introduction of a Protecting LigandXIAOYONG LIANG; QING YI; SAI BAI et al.Nano letters (Print). 2014, Vol 14, Num 6, pp 3117-3123, issn 1530-6984, 7 p.Article

Thermoelectric properties of p-type higher manganese silicide films prepared by solid phase reaction and reactive depositionHOU, Q. R; ZHAO, W; CHEN, Y. B et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 10, pp 3429-3437, issn 1862-6300, 9 p.Article

How it really happened : The history of p-type doping of gallium nitrideJAIN, Rakesh B; MARUSKA, Herbert Paul.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 1970-1976, issn 1862-6300, 7 p.Conference Paper

Effects of gas adsorption on the electrical conductivity of single-wall carbon nanohornsURITA, Koki; SEKI, Shinya; LIJIMA, Sumio et al.Nano letters (Print). 2006, Vol 6, Num 7, pp 1325-1328, issn 1530-6984, 4 p.Article

Epitaxial MnCdHgTe layers obtained by RF sputtering in mercury plasmaKAVYCH, Volodymyr; LOZYNSKA, Maria; MANSUROV, Leonid et al.SPIE proceedings series. 2003, pp 434-439, isbn 0-8194-4986-5, 6 p.Conference Paper

A low cost metallization scheme for double sided buried contact silicon solar cellsEBONG, A. U; TAOUK, M; WENHAM, S. R et al.Solar energy materials and solar cells. 1994, Vol 31, Num 4, pp 499-507, issn 0927-0248Article

Stimulated emission from p-Ge due to transitions between light-hole landau levels and excited states of shallow impuritiesKREMSER, C; HEISS, W; UNTERRAINER, K et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1785-1787, issn 0003-6951Article

Changes in the opto-electronic properties of CulnSe₂ following ion implantationTOMLINSON, R. D; HILL, A. E; IMANIEH, M et al.Journal of electronic materials. 1991, Vol 20, Num 9, pp 659-663, issn 0361-5235Article

Charged dislocations in p-type semiconductorsSHIKIN, V. B; SHIKINA, V; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 12, pp 1341-1342, issn 0038-5700Article

Electron density and mobility in p-type narrow-gap II-VI semiconductor compoundsREMESNIK, V. G; TALIPOV, N. K.Soviet physics. Semiconductors. 1991, Vol 25, Num 6, pp 658-660, issn 0038-5700Article

Electroluminescent device made of diamondFUJIMORI, N; NISHIBAYASHI, Y; SHIOMI, H et al.Japanese journal of applied physics. 1991, Vol 30, Num 8, pp 1728-1730, issn 0021-4922, 1Article

Minimal ohmic contact resistance limits to n-type semiconductorsKUPKA, R. K; ANDERSON, W. A.Journal of applied physics. 1991, Vol 69, Num 6, pp 3623-3632, issn 0021-8979Article

Magnétostriction du semiconducteur ferromagnétique HgCr2Se4VIKTORAVICHYUS, V.S; GALDIKAS, A.P; GREBINSKIJ, S.I et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 271-272, issn 0367-3294Article

Intrinsic mobility and its surface degradation parameters in narrow channel width PMOS devices at cryogenic temperaturesDEEN, M. J; WANG, J; HARDY, R. H. S et al.Solid-state electronics. 1989, Vol 32, Num 11, pp 1009-1012, issn 0038-1101Article

Influence de l'irradiation par les protons sur la luminescence de l'arséniure de galliumGLINCHUK, K. D; ZAYATS, N. S; PROKHOROVICH, A. V et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 4, pp 657-661, issn 0015-3222Article

Réarrangement thermique de champ électrique et d'injection des défauts d'irradiation dans un silicium de type pKUCHINSKIJ, P. V; LOMAKO, V. M; PETRUNIN, A. P et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 9, pp 1625-1628, issn 0015-3222Article

Hot-carrier-induced degradation in p-MOSFET's under AC stressONG, T.-C; SEKI, K; KO, P. K et al.IEEE electron device letters. 1988, Vol 9, Num 5, pp 211-213, issn 0741-3106Article

Nouveau système d'obtention de l'hydrogène par photo-électrolyse de l'eauPOPKIROV, G. S; PLESKOV, YU. V.Èlektrohimiâ. 1988, Vol 24, Num 7, pp 907-910, issn 0424-8570Article