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Conductivité par une bande d'états localisés dans les solutions solides Pb1-xSnxSe irradiées par électronsSKIPETROV, E. P; DUBKOV, V. P; MUSALITIN, A. M et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1785-1791, issn 0015-3222Article

Dunkelströme in n-Kanal-Volumen CCD = Courants d'obscurité dans un dispositif à transfert de charges à canal n = Dark currents in n channel CCDEIGLER, H; DONTH, H.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 5, pp 176-177, issn 0323-4657Article

Etching characteristics of n⁺ poly-Si and Al employing a magnetron plasmaOKANO, H; HORIIKE, Y; YAMAZAKI, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 4, pp 482-486, issn 0021-4922, 1Article

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A NEW GRATING-TYPE GOLD-N-TYPE SILICON SCHOTTKY-BARRIER PHOTODIODECHI TONG WANG; SHENG SAN LI.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 525-526; BIBL. 13 REF.Serial Issue

MICROWAVE FARADAY EFFECT IN N TYPE GERMANIUM = EFFET FARADAY HF DANS DU GERMANIUM DE TYPE NSRIVASTAVA GP; KOTHARI PC.1972; J. PHYS. D; G.B.; DA. 1972; VOL. 5; NO 10; PP. 1957-1961; BIBL. 6 REF.Serial Issue

Influence du champ électrique sur l'effet magnétorésistif dans l'arséniure de gallium faiblement dopéKAMARA, M. S; LUKASHEVICH, M. G; STEL'MAKH, C. F et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 6, pp 1134-1136, issn 0015-3222Article

Degradation mechanism of lightly doped drain (LDD) n-channel MOSFET's studied by ultraviolet light irradiationSAITOH, M; SHIBATA, H; MOMOSE, H et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 10, pp 2463-2466, issn 0013-4651Article

Photoelectrochemistry of Culn₅S₈ and Hgln₂S₄BECKER, R. S; TAN ZHENG; ELTON, J et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 8, pp 1824-1829, issn 0013-4651Article

Analysis on interband-resonant light modulation by intersubband-resonant light in n-doped quantum wellsNODA, S; UEMURA, T; YAMASHITA, T et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 2, pp 493-500, issn 0018-9197Article

Influence des déformations uniaxiales sur la position du niveau profond de l'or dans Ge-nSEMENYUK, A. K; NAZARCHUK, P. F.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 540-542, issn 0015-3222Article

Enhancement source-coupled logic for mixed-mode VLSI circuitsMALEKI, M; KIAEI, S.IEEE Transactions on circuits and systems. II : Analog and digital signal processing. 1992, Vol 39, Num 6, pp 399-402Article

Novel NMOS transistors with near-zero depth conductor/thin insulator/semiconductor (CIS) source and drain junctionsMORAVVEJ-FARSHI, M. K; GREEN, M. A.IEEE electron device letters. 1986, Vol EDL-7, Num 8, pp 474-476, issn 0741-3106Article

Magnétorésistance linéaire des semiconducteurs à plusieurs vallées dans le champ électrique faiblement échauffantKANTSLERIS, ZH. V; MATULIS, A. YU; TVARDAUSKAS, G. A et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1786-1790, issn 0015-3222Article

A fast 16 bit NMOS parallel multiplierLEROUGE, C. P; GIRARD, P; COLARDELLE, J. S et al.IEEE journal of solid-state circuits. 1984, Vol 19, Num 3, pp 338-342, issn 0018-9200Article

Photoconductivity in n-type InP:FeCHADRAABAL, S; POPOV, A. S; KUSHEV, D. B et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 709-714, issn 0031-8965Article

Synthèse d'oligomères de rangs 6 et 8 du poly-(paraphénylène) dopage chimique de type N et caractérisations spectroscopiques = PPP oligomer synthesis with polymerization degree equal to 6 and 8 chemical N doping and spectroscopic characterizationsSimonneau, Antony; Froyer, G.1996, 16 p.Thesis

Study of 1/f noise in M-MOSFET's: linear regionCELIK, Z; HSIANG, T. Y.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 12, pp 2797-2802, issn 0018-9383Article

ENERGY RELAXATION OF ELECTRONS IN THE (100)_N-CHANNEL OF A SI-MOSFET. I. BULK PHONON TREATMENT.KROWNE CM; HOLM KENNEDY JW.1974; SURF. SCI.; NETHERL.; DA. 1974; VOL. 46; NO 1; PP. 197-231; BIBL. 1 P. 1/2Article

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HIGH-PERFORMANCE NMOS OPERATIONAL AMPLIFIERSENDEROWICZ D; HODGES DA; GRAY PR et al.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 6; PP. 760-766; BIBL. 9 REF.Article

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CASMOS - AN ACCURATE MOS MODEL WITH GEOMETRY-DEPENDENT PARAMETERS. IOAKLEY RE; HOCKING RJ.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 6; PART. 1; PP. 239-247; BIBL. 9 REF.Article

A SINGLE-CHANNEL PCM VOICE CODEC IN NMOS TECHNOLOGYGALIMBERTI GB; POLUZZI R; BACCARANI G et al.1981; ALTA FREQ.; ISSN 0002-6557; ITA; DA. 1981; VOL. 50; NO 6; PP. 294-301; BIBL. 14 REF.Article