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DETECTION ET MESURE DE LA PUISSANCE DU RAYONNEMENT UHF D'UNE DUREE DE QUELQUES NANOSECONDESRAJZER MD; TSOPP L EH.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 8; PP. 1691-1693; BIBL. 9 REF.Article

ON THE FORMATION OF A BARRIER JUNCTION IN SURFACE-BARRIER DETECTORS ON THE BASIS OF P-TYPE SILICON.MARINOV MG; LEFTEROV DP.1974; C.R. ACAD. BULG. SCI.; BULG.; DA. 1974; VOL. 27; NO 11; PP. 1485-1487; BIBL. 11 REF.Article

Effect of oxygen impurity on microstructure and boron penetration in a BF₂⁺ implanted LPCVD stacked amorphous silicon p⁺ gated PMOS capacitorLIN, C.-Y; PAN, F.-M; CHOU, P.-F et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 7, pp 2434-2437, issn 0013-4651Article

Photoelectrochemical diffusion length measurements on p-type multicrystalline silicon for photovoltaic applicationsBASTIDE, S; VEDEL, J; LINCOT, D et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 3, pp 1024-1030, issn 0013-4651Article

Surface compensation of p-InP as observed by capacitance dispersionAHRENKIEL, R. K; SHELDON, P; DUNLAVY, D et al.Applied physics letters. 1983, Vol 43, Num 7, pp 675-676, issn 0003-6951Article

Effects of lightly doped drain structure with optimum ion dose on p-channel MOSFET'sKAGA, T; SAKAI, Y.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2384-2390, issn 0018-9383Article

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Continuous wavelength tuning of inter-valence-band laser oscillation in p-type germanium over range of 80-120 μmKOMIYAMA, S; MORITA, H; HOSAKO, I et al.Japanese journal of applied physics. 1993, Vol 32, Num 11A, pp 4987-4991, issn 0021-4922, 1Article

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Compensated MOSFET devicesKLAASSEN, F. M; HES, W.Solid-state electronics. 1985, Vol 28, Num 4, pp 359-373, issn 0038-1101Article

Magnétoconductivité anormale des cristaux AIIIBV de type p aux basses températuresVORONINA, T. I; GASANLI, SH. M; EMEL'YANENKO, O. V et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 4, pp 731-734, issn 0015-3222Article

The effect of gate-oxide process variations on the long-term fading of PMOS dosimetersKELLEHER, A; MCDONNELL, N; O'NEILL, B et al.Sensors and actuators. A, Physical. 1993, Vol 37-38, pp 370-374, issn 0924-4247Conference Paper

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Simplified chemical deposition technique for good quality SnS thin filmsNAIR, M. T. S; NAIR, P. K.Semiconductor science and technology. 1991, Vol 6, Num 2, pp 132-134, issn 0268-1242Article

Décompositions de l'énergie des électrons secondaires émis par l'arséniure de gallium avec l'affinité électronique négativeANDRONOV, A.N; STUCHINSKIJ, G.B; YANYUSHKIN, E.I et al.Fizika tverdogo tela. 1989, Vol 31, Num 5, pp 23-30, issn 0367-3294Article

Effet photovoltaïque dans une hétérojonction à base de ZnSnAs2 de type pRUD, YU. V; TAIROV, M. A.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 8, pp 1586-1588, issn 0044-4642Article

INFLUENCE DE LA HAUTE PRESSION SUR LES PROPRIETES ELECTRIQUES DU GAAS PSVIRIDOV IF; PRESNOV VA.1971; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1971; VOL. 6; NO 6; PP. 487-491; ABS. ARM. ANGL.; BIBL. 6 REF.Serial Issue

THRESHOLD VOLTAGE SHIFT OF P-CHANNEL MOS-TRANSISTORS BY IMPLANTATION OF DONORS.RUNGE H.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 1; PP. 43-46; BIBL. 5 REF.Article

THE VARIATION OF RESIDUAL IMPURITIES IN ZNSE CRYSTALS USED IN LIGHT-EMITTING DIODE FABRICATIONSKUN ZK.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1248-1250; BIBL. 13 REF.Article

GERMANIUM-DOPED GAAS FOR P-TYPE OHMIC CONTACTS.KETCHOW DR.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 9; PP. 1237-1239; BIBL. 5 REF.Article

QUANTUM OSCILLATIONS IN P-TYPE INVERSION LAYERS OF (111) AND (100) SILICON FIELD EFFECT TRANSISTORS.VON KLITZING K; LANDWEHR G; DORDA G et al.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 3; PP. 489-493; ABS. ALLEM.; BIBL. 11 REF.Article

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PROPERTIES OF HIGH PERFORMANCE BACKGROUND LIMITED P TYPE SI:ZN PHOTOCONDUCTORSSCLAR N.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 203-213; BIBL. 16 REF.Article

CONTACTS OHMIQUES SUR LE SILICIUM P PARTIELLEMENT COMPENSEABRAMCHUK GA; ALEKSANDRENKO V YA; ALEKHIN VA et al.1979; PRIBORY TEKH. EKSPER.; SUN; DA. 1979; NO 1; PP. 254-255; BIBL. 8 REF.Article