Phonon anomalies and charge dynamics in Fe_1-xCu_xCr₂S₄ single crystalsRUDOLF, T; PUCHER, K; MAYR, F et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014450.1-14450.7, issn 1098-0121Article

HgCdMnZnTe: new material for IR photoelectronicsGORBATYUK, I. M; OSTAPOV, S. E; RARENKO, I. M et al.Journal of alloys and compounds. 2004, Vol 371, pp 114-117, issn 0925-8388, 4 p.Conference Paper

Current-limiting property of Cu/cupric oxide/Cu sandwich structureSERIN, Necmi; SERIN, Tülay; KARADENIZ, Serdar et al.Semiconductor science and technology. 2002, Vol 17, Num 1, pp 60-64, issn 0268-1242Article

Analytical functions for the dc and ac conductivity of conductor-insulator compositesMCLACHLAN, David S.Journal of electroceramics. 2000, Vol 5, Num 2, pp 93-110, issn 1385-3449Article

Quantification of electrical deactivation by triply negative charged Ga vacancies in highly doped thin GaAs layersMATSUSHITA, S; INOUE, D; MATSUMURA, K et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1698-1702, issn 0021-4922, 1Conference Paper

An electron mobility model for wurtzite GaNSCHWIERZ, Frank.Solid-state electronics. 2005, Vol 49, Num 6, pp 889-895, issn 0038-1101, 7 p.Article

Charge-carrier concentration dependence of the hopping mobility in organic materials with Gaussian disorderCOEHOOM, R; PASVEER, W. F; BOBBED, P. A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155206.1-155206.20, issn 1098-0121Article

Anomalous electro-migration of oxygen vacancies in reduced TiO₂MIYAOKA, Hideharu; MIZUTANI, Goro; SANO, Haruyuki et al.Solid state communications. 2002, Vol 123, Num 9, pp 399-404, issn 0038-1098Article

Characterization on the current-voltage curves of ultrathin silicon dioxides incorporated with fluorine and/or nitrogenCHANG, W. J; HOUNG, M. P; WANG, Y. H et al.Semiconductor science and technology. 2001, Vol 16, Num 12, pp 961-965, issn 0268-1242Article

Electrical conductivity in magnesium-doped Al₂O₃ crystals at moderate temperaturesTARDIO, M; RAMIREZ, R; GONZALEZ, R et al.Radiation effects and defects in solids. 2001, Vol 155, Num 1-4, pp 409-413, issn 1042-0150Conference Paper

Electron transport in cryocrystalsSTORCHAK, V. G; ESHCHENKO, D. G; BREWER, J. H et al.Journal of low temperature physics. 2001, Vol 122, Num 3-4, pp 527-535, issn 0022-2291Conference Paper

On the temperature dependence of electrical conductivity of buckytube-containing carbonaceous samplesHEYD, R; CHARLIER, A; MARECHE, J. F et al.Solid state communications. 1994, Vol 89, Num 12, pp 989-994, issn 0038-1098Article

On the additivity of generation-recombination spectra. Part 1: Conduction band with two centresHOOGE, F. N.Physica. B, Condensed matter. 2002, Vol 311, Num 3-4, pp 238-249, issn 0921-4526Article

Some challenges-old and newGEBALLE, T. H.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2001, Vol 81, Num 9, pp 819-826, issn 1364-2812Article

Electrical transport in LaNiO_3-δ (0 ≤ δ ≤ 0.14)TIWARI, A; RAIEEV, K. P.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 16, pp 3291-3298, issn 0953-8984Article

Simulation of electrical properties of recrystallized SiCKONDO, A.Nippon seramikkusu kyokai gakujutsu ronbunshi. 1999, Vol 107, Num 9, pp 791-795, issn 0914-5400Article

Proceedings of the Latin American Symposium on Solid State PhysicsGONZALES GOMEZ, Jes´us; HERNANDEZ-CALDERON, Isaac.Microelectronics journal. 2005, Vol 36, Num 10, issn 0959-8324, 71 p.Conference Proceedings

Oxygen partial pressure dependency of electrical resistivity of MgCr₂O₄ with spinel type crystal structureMORIWAKE, H; HATA, T; TAKAHASHI, M et al.Nippon seramikkusu kyokai gakujutsu ronbunshi. 1999, Vol 107, Num 9, pp 850-852, issn 0914-5400Article

Transport study of ZnSe:N employing Zn(Se,Te) graded contactsFAN, Y; HAN, J; HE, L et al.Applied physics letters. 1993, Vol 63, Num 13, pp 1812-1814, issn 0003-6951Article

Le transistor VDMOS en régime de quasi-saturation : étude analytique et modélisation = VDMOS transistor quasi-saturation behaviour : Analytical study and remodellingBLIEK, A; GUERIN, J; EL CHEIKH, M. K et al.Journal de physique. III (Print). 1997, Vol 7, Num 9, pp 1851-1868, issn 1155-4320Article

Conference on The Physics and Chemistry of Conducting LiquidsJournal of physics. Condensed matter (Print). 1997, Vol 9, Num 13, pp 2683-2730, issn 0953-8984Conference Proceedings

Unified view on conductivity and specific heat in DCNQI-Cu systemsYAMADA, K; KATO, M; NAKANO, M et al.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 9, pp 1807-1819, issn 0953-8984Article

Sintering behavior and PTCR properties of stoichiometric blend BaTiO₃MUKHERJEE, N; ROSEMAN, R. D; ZHANG, Q et al.The Journal of physics and chemistry of solids. 2002, Vol 63, Num 4, pp 631-638, issn 0022-3697Article

Shallow-level centers in semiconductors - 2000AMMERLAAN, C. A. J.Physica. B, Condensed matter. 2001, Vol 302-03, pp 425-434, issn 0921-4526Conference Paper

Effect of Na-diffusion on the electrical properties of SrTiO₃KIM, S.-H; BYUN, J.-D; WON-PARK et al.Journal of materials science. 1999, Vol 34, Num 13, pp 3057-3061, issn 0022-2461Article