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Results 1 to 25 of 6396

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Characterization of non-ohmic behavior of emitter contacts of bipolar transistorsRICCO, B; STORK, J. M. C; ARIENZO, M et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 221-223, issn 0741-3106Article

Overview of stamped electronic contactsSEIDLER, J.Electri.onics. 1985, Vol 31, Num 12, pp 55-57, issn 0745-4309Article

Tribological problems on electrical contactsMYSHKIN, N. K.Tribology international. 1991, Vol 24, Num 1, pp 45-49, issn 0301-679XArticle

Make and break properties of electrodepositsGROSSMANN, H; HUCK, M; SCHAUDT, G et al.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 70-79, issn 0148-6411Article

Tribology frontiers in electrical contactsDAY, Linda A.Tribology & lubrication technology. 2006, Vol 62, Num 8, pp 30-37, issn 1545-858X, 8 p.Article

Electric contacts, Paris, 1988, June 20-24International conference on electric contacts. 14. 1988, VI-448 pConference Proceedings

Determination of potential at the beveled interface between two materialsLE HELLEY, M; CHANTE, J. P.Solid-state electronics. 1984, Vol 27, Num 12, pp 1123-1125, issn 0038-1101Article

CHARACTERIZATION OF THE INTERFACE STATES AT AL-GAAS SCHOTTKY BARRIERS WITH A THIN INTERFACE LAYERMORANTE JR; LOUSA A; CARCELLER JE et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 537-538; BIBL. 7 REF.Article

ON THE EVALUATION OF CONTACT TEMPERATURE FROM POTENTIAL-DROP MEASUREMENTSTIMSIT RS.1983; IEEE TRANSACTIONS ON COMPONENTS, HYBRIDS, AND MANUFACTURING TECHNOLOLGY; ISSN 0148-6411; USA; DA. 1983; VOL. 6; NO 1; PP. 115-121; BIBL. 13 REF.Article

SCHOTTKY BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINIUM-TITANIUM-GALLIUM ARSENIDE CONTACTSWADA Y; CHINO KI.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 559-564; BIBL. 13 REF.Article

THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGINGMARLOW GS; DAS MB; TONGSON L et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 259-266; 7 P.; BIBL. 17 REF.Article

CALCULATION OF THE DYNAMIC RESPONSE OF SCHOTTKY BARRIERS WITH A CONTINUOUS DISTRIBUTION OF GAP STATESCOHEN JD; LANG DV.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 8; PP. 5321-5350; BIBL. 34 REF.Article

RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTSMORI M.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 81-86; BIBL. 13 REF.Article

SCHOTTKY BARRIER MEASUREMENTS ON P-TYPE IN0,53)GA0,47)ASVETERAN JL; MULLIN DP; ELDER DI et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 2; PP. 187-190; BIBL. 9 REF.Article

Elektroreib- Wechselwirkung electrischer Strarkstron ― Gleitkontakte. III: Versuchsergebnisse = Electro-friction interaction of electric power sliding contacts. Part 3: Experimental resultsCICINADZE, A. V; CHOVANSKIJ, V. N; PREZENCEVA, N. P et al.Schmierungstechnik. 1990, Vol 21, Num 7, pp 211-214, issn 0036-6226, 4 p.Article

Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAsWÜRFL, J; NASSIBIAN, A. G; HARTNAGEL, H. L et al.International journal of electronics. 1989, Vol 66, Num 2, pp 213-225, issn 0020-7217, 13 p.Article

Electrically and frictionally derived mound temperatures in carbon graphite brushesBRYANT, M. D; YUNE, Y. G.IEEE transactions on components, hybrids, and manufacturing technology. 1989, Vol 12, Num 2, pp 229-236, issn 0148-6411, 8 p.Conference Paper

Moderne Schaltstückwerkstoffe = Matériaux de contact modernes = Modern contact materialsAMFT, D.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1986, Vol 28, Num 6, pp 819-822, issn 0372-7610Article

An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistorsLOH, W. M; SWIRHUN, S. E; CRABBE, E et al.IEEE electron device letters. 1985, Vol 6, Num 9, pp 441-443, issn 0741-3106Article

Analytical and experimental analysis of nonlinear bouncing contactsSLONIM, A. A.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 2, pp 296-302, issn 0148-6411Article

Optical-phonon emission in ballastic transport through microchannels of InGaAsPONG-FEI LU; TSUI, D. C.Physical review letters. 1985, Vol 54, Num 14, pp 1563-1566, issn 0031-9007Article

Comments on «determining specific contact resistivity from contact end resistance measurements»MAZER, J. A; LINHOLM, L. W; CHERN, J et al.IEEE electron device letters. 1984, Vol 5, Num 9, pp 347-349, issn 0741-3106Article

Power law broadening of charge packets at semiconductor interfacesCOOPER, J. A. JR.Applied physics letters. 1984, Vol 44, Num 2, pp 243-245, issn 0003-6951Article

Schottky barrier characteristics at low temperaturesCHANDRA, M. M; PRASAD, M.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp 715-719, issn 0031-8965Article

On the failure mechanisms of titanium nitride/titanium silicide barrier contacts under high current stressKUAN-YU FU; PYLE, R. E.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2151-2159, issn 0018-9383Article

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