Overview of stamped electronic contactsSEIDLER, J.Electri.onics. 1985, Vol 31, Num 12, pp 55-57, issn 0745-4309Article

Tribological problems on electrical contactsMYSHKIN, N. K.Tribology international. 1991, Vol 24, Num 1, pp 45-49, issn 0301-679XArticle

Make and break properties of electrodepositsGROSSMANN, H; HUCK, M; SCHAUDT, G et al.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 70-79, issn 0148-6411Article

Electric contacts, Paris, 1988, June 20-24International conference on electric contacts. 14. 1988, VI-448 pConference Proceedings

Determination of potential at the beveled interface between two materialsLE HELLEY, M; CHANTE, J. P.Solid-state electronics. 1984, Vol 27, Num 12, pp 1123-1125, issn 0038-1101Article

SCHOTTKY BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINIUM-TITANIUM-GALLIUM ARSENIDE CONTACTSWADA Y; CHINO KI.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 559-564; BIBL. 13 REF.Article

THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGINGMARLOW GS; DAS MB; TONGSON L et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 259-266; 7 P.; BIBL. 17 REF.Article

RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTSMORI M.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 81-86; BIBL. 13 REF.Article

SCHOTTKY BARRIER MEASUREMENTS ON P-TYPE IN⁰,53)GA⁰,47)ASVETERAN JL; MULLIN DP; ELDER DI et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 2; PP. 187-190; BIBL. 9 REF.Article

On the failure mechanisms of titanium nitride/titanium silicide barrier contacts under high current stressKUAN-YU FU; PYLE, R. E.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2151-2159, issn 0018-9383Article

Investigation of ring structures for metal-semiconductor contact resistance determinationWILLIS, A. J; BOTHA, A. P.Thin solid films. 1987, Vol 146, Num 1, pp 15-20, issn 0040-6090Article

Detection of a-spots in aluminun contactsRUNDE, M; KONGSJORDEN, H; KULSETAS, J et al.IEEE transactions on components, hybrids, and manufacturing technology. 1986, Vol 9, Num 1, pp 77-85, issn 0148-6411Conference Paper

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfacesVAN MEIRHAEGHE, R. L; CARDON, F; GOMES, W. P et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 188, Num 1-2, pp 287-291, issn 0022-0728Article

Electroplated palladium-silver (60/40 wt%) alloy as a contact materialNOBEL, F. I.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 163-172, issn 0148-6411Article

Ion beam contacting of silicon. II: Antimony in n-siliconMERTENS, A; KLOSE, H; TANG, N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 1, pp 369-374, issn 0031-8965Article

Modification of Schottky barriers in silicon by reactive ion etching in NF₃ gas mixturesCHOW, T. P; ASHOK, S; BALIGA, B. J et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 1, pp 156-160, issn 0013-4651Article

Pivot contact behavior in low-inertia snap-action rocker switchesMAPPS, D. J; WHITE, P. J; ROBERTS, G et al.IEEE transactions on components, hybrids, and manufacturing technology. 1984, Vol 7, Num 1, pp 125-128, issn 0148-6411Article

Interdiffusion profiles of AuGe/n-GaAs ohmic contacts studied by AESJUNG, T; NEBAUER, E.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K203-K206, issn 0031-8965Article

Réalisation de contacts ohmiques sur GaAs par des méthodes de recuits de très courte durée = Fabrication of ohmic contacts on GaAs by very short time annealing methodsMARTIN, G. M; MAKRAM-EBEID, S; BARBIER et al.1983, 48 p.Report

Plasma sputtering of copper coatings on aluminum electrical contactsREVUN, S. A; MURAV'EVA, E. L; EGOROV, N. G et al.Russian electrical engineering. 1994, Vol 65, Num 6, pp 1-5, issn 1068-3712Article

Proceedings of the thirty fourth meeting of the IEEE Holm conference on electrical contacts, San Francisco CA, September 26-29, 1988Holm conference on electrical contacts. 34. 1988, XIX-340 pConference Proceedings

Temperature dependence of specific contact resistivitySWIRHUN, S. E; SWANSON, R. M.IEEE electron device letters. 1986, Vol 7, Num 3, pp 155-157, issn 0741-3106Article

Electromigration in structures of aluminium on semi-insulating GaAsEJIMANYA, J. I.Thin solid films. 1986, Vol 144, Num 2, pp 151-158, issn 0040-6090Article

Calculations of mechanical stresses in electrical contact situationsTANGENA, A. G; HURKX, G. A. M.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 13-20, issn 0148-6411Article

Effect of space angle on constriction resistance and contact resistance for the case of line contactSANO, Y.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 228-234, issn 0148-6411Article