Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Contact isolant semiconducteur")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 757

  • Page / 31
Export

Selection :

  • and

Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiOxNy/Si structuresVASQUEZ, R. P; MADHUKAR, A.Applied physics letters. 1985, Vol 47, Num 9, pp 998-1000, issn 0003-6951Article

Power law broadening of charge packets at semiconductor interfacesCOOPER, J. A. JR.Applied physics letters. 1984, Vol 44, Num 2, pp 243-245, issn 0003-6951Article

An analytic solution for breakdown voltage of cyclindrical junctions including the interface chargeKYOUNG YANG; IL-JUNG KIM; MIN-KOO HAN et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 1107-1108, issn 0038-1101Article

Use of EOS (electrolyte/oxide/semiconductor) systems for the electrical characterization of illuminated semiconductor/dielectric interfacesDIOT, J. L; JOSEPH, J; MARTIN, J. R et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1986, Vol 197, Num 1-2, pp 381-385, issn 0022-0728Article

Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO2 interfaceTSAI, J. R; HO, L. W; LIN, S. H et al.International Electron Devices Meeting. 2004, pp 979-982, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Electrical characteristics of NO nitrided SiO2 grown on p-type 4H-SiCLI, H. F; DIMITRIJEV, S; HARRISON, H. B et al.International conference on microelectronic. 1997, pp 611-612, isbn 0-7803-3664-X, 2VolConference Paper

Dimension spatiale des fluctuations statistiques du potentiel dans les structures MISGUZEV, A. A; GURTOV, V. A.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 8, pp 1367-1372, issn 0015-3222Article

Protons at the Si-SiO2 interface : a first principle investigationGODET, Julien; PASQUARELLO, Alfredo.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2035-2038, issn 0167-9317, 4 p.Conference Paper

A new analytical expression for the interface index of metal-Schottky contacts on semiconductorsSZE, J. J; CHENG, H. C.Solid-state electronics. 1995, Vol 38, Num 5, pp 1059-1063, issn 0038-1101Article

Caractérisation électrique d'hétérostructures et de couches minces semiconductrices par effet Hall. I: Superréseaux GaAs/AlAs. II: Silicium sur isolant = Electrical characterization of semiconductivity heterostructures and thin films using Hall effect. I: GaAs/AlAs. II: Silicon on insulatorJeanjean, Philippe; Robert, J. L.1992, 170 p.Thesis

Numerical simulation of the thermal oxidation of silicon in N2O ambientGADIYAK, G. V; KOROBITSINA, J. L.Solid-state electronics. 1995, Vol 38, Num 5, pp 1113-1114, issn 0038-1101Article

Silicide-silicon Schottky barriersSCHMID, P. E.Helvetica Physica Acta. 1985, Vol 58, Num 2-3, pp 371-382, issn 0018-0238Article

The study of slow relaxation of charged centres in insulator-semiconductor structures using fluorescent molecule probesBESPALOV, V. A; KASHKAROV, P. K; KISELEV, V. F et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp 315-326, issn 0031-8965Article

INTERFACE STATES ON SEMICONDUCTOR-INSULATOR SURFACES.GOETZBERGER A; KLAUSMANN E; SCHULZ MJ et al.1976; C.R.C. CRIT. REV. SOLID STATE SCI.; U.S.A.; DA. 1976; VOL. 6; NO 1; PP. 1-43; BIBL. 2 P. 1/2Article

ACTIVITE DE RECOMBINAISON DE L'INTERFACE DE SEPARATION SEMICONDUCTEUR-DIELECTRIQUE) - ARTICLE DE REVUELITOVCHENKO VG.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 14; PP. 3-20; BIBL. 1 P.Article

SURFACE WAVE PROPAGATION ON SEMICONDUCTOR-DIELECTRIC INTERFACE.DINESH CHANDRA TIWARI; VERMA JS.1975; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1975; VOL. 13; NO 11; PP. 772-775; BIBL. 11 REF.Article

EVIDENCE FOR A MOBILITY EDGE IN INVERSION LAYERS. II.STERN F.1974; J. VACUUM. SCI. TECHNOL.; U.S.A.; DA. 1974; VOL. 11; NO 6; PP. 962-964; BIBL. 25 REF.; (SYMP. ELECTRON. STRUCT. PROP. INTERFACES. PROC.; PRINCETON, N.J.; 1973)Conference Paper

CINETIQUE D'ACCUMULATION DES PHOTOPORTEURS ET VARIATION DE PHASE DU COURANT ALTERNATIF DANS LES STRUCTURES DU TYPE SEMICONDUCTEUR-DIELECTRIQUEKOVTONYUK NF; MOROZOV VA; FADIN VG et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 2; PP. 201-203; BIBL. 5 REF.Article

ETUDE DE L'HETEROGENEITE DES CARACTERISTIQUES DE LA SURFACE DE STRUCTURES SEMICONDUCTEUR-DIELECTRIQUEGORBAN AP; LITOVCHENKO VG; ROMANYUK BN et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 35-45; BIBL. 15 REF.Article

ETUDE DES CARACTERISTIQUES DE L'INTERFACE DIELECTRIQUE-ARSENIURE DE GALLIUM PAR LA METHODE DE PHOTOLUMINESCENCE SUPERFICIELLEZUJEV VO; KORBUTYAK DV; LITOVCHENKO VG et al.1975; DOP. AKAD. NAUK U.R.S.R.,A; S.S.S.R.; DA. 1975; VOL. 37; NO 1; PP. 69-72; ABS. ANGL.; BIBL. 8 REF.Article

EFFET D'UN TRAITEMENT PLASMO-CHIMIQUE SUR L'ETAT DE CHARGE DU SYSTEME DIELECTRIQUE-SILICIUMDIKAREV YU I; SAKHAROV BN; GOL'DFARB VA et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 2; PP. 113-116; BIBL. 16 REF.Article

INFLUENCE DU TRAITEMENT THERMIQUE SUR LES PROPRIETES DES STRUCTURES GAAS-GE3N4SKORIKOV VA; SAKSAGANSKIJ OV; PASHINTSEV YU I et al.1975; MIKROELEKTRONICA; S.S.S.R.; DA. 1975; VOL. 4; NO 4; PP. 321-324; BIBL. 8 REF.Article

ETUDE DE LA FRONTIERE ARSENIURE DE GALLIUM-DIELECTRIQUE ET DE LA REGION VOISINE DE LA SURFACE PAR UNE METHODE DE PHOTOLUMINESCENCEVEJTS VV; ZUEV VA; KORBUTYAK DV et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 107-111; BIBL. 13 REF.Article

CONDUCTIBILITE ELECTRIQUE ET DEPOLARISATION THERMOSTIMULEE DES COUCHES MINCES DE NITRURE DE SILICIUM SUR SILICIUMSADOF'EV YU G; PERELYGIN AI.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 6; PP. 520-523; BIBL. 11 REF.Article

High quality SiO2/Si interfaces of poly-crystalline silicon thin film transistors by annealing in wet atmosphereSANO, N; SEKIYA, M; HARA, M et al.IEEE electron device letters. 1995, Vol 16, Num 5, pp 157-160, issn 0741-3106Article

  • Page / 31