Contribution à l'étude des contacts ohmiques sur GaSb de type n et InAs de type pKhald, Hassan; Joullie, A.1989, 110 p.Thesis

Direct observation of the semimetal to semiconductor transition in crossed band gap superlattices at magnetic fields of up to 150 TBARNES, D. J; NICHOLAS, R. J; WARBURTON, R. J et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1027-1030, issn 0038-1101Conference Paper

AU-Be/Au and AU-Be/Cr/Au ohmic contacts to p-type InP and InGaAsPMALINA, V; VOGEL, K; ZELINKA, J et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1015-1021, issn 0268-1242Article

Electromigration in structures of aluminium on semi-insulating GaAsEJIMANYA, J. I.Thin solid films. 1986, Vol 144, Num 2, pp 151-158, issn 0040-6090Article

Diffusion d'atomes stimulée par irradiation en un contact métal-semiconducteurSINISHCHUK, I. K; CHAJKA, G. E; PISHIYANU, F. S et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 674-677, issn 0015-3222Article

Elaboration de couches minces métalliques par méthodes ioniques: caractérisation des films et de leurs interfaces = Metal layers deposited by ion methods: characterization of the films and of the contactsMeyer Cubaud, François; Gautherin, Guy.1989, 341 p.Thesis

On the barrier height of a metal-semiconductor contact with a thin interfacial layerCHATTOPADHYAY, P; DAW, A. N.Solid-state electronics. 1985, Vol 28, Num 8, pp 831-836, issn 0038-1101Article

Magneton sputtered gold contacts on n-GaAsBUONAQUISTI, A. D; MATSON, R. J; RUSSELL, P. E et al.Surface and interface analysis. 1984, Vol 6, Num 6, pp 279-281, issn 0142-2421Article

A further comment on «determining specific contact resistivity from contact end resistance measurements»FINETTI, M; SCORZONI, A; SONCINI, G et al.IEEE electron device letters. 1985, Vol 6, Num 4, pp 184-185, issn 0741-3106Article

Nickel and copper on cleaved indium phosphide: structure, metallurgy and electronic propertiesHUGHES, G. J; MCKINLEY, A; WILLIAMS, R. H et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 12, pp 2391-2405, issn 0022-3719Article

Radiation effects on the metal-GaP interfaceBORKOVSKAYA, O. Y; DMITRUK, N. L; KONAKOVA, R. V et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K129-K133, issn 0031-8965Article

Structure métal-semiconducteur à base de InAs pESINA, N. P; ZOTOVA, N. V; KARANDASHEV, S. A et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 6, pp 991-996, issn 0015-3222Article

Performance of In-p InP contactBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1715-1719, issn 0033-8494Article

Fast alloying technique for improved ohmic contacts to n-GaAsMOIZES, I.Solid-state electronics. 1984, Vol 27, Num 10, pp 925-926, issn 0038-1101Article

Chemistry and electronic properties of metal contacts on an organic molecular semiconductorHIROSE, Y; WU, C. I; ARISTOV, V et al.Applied surface science. 1997, Vol 113114, pp 291-298, issn 0169-4332Conference Paper

A tri-layer transmission line model applied to alloyed ohmic contactsREEVES, G. K; HARRISON, H. B.Solid-state electronics. 1995, Vol 38, Num 5, pp 1115-1117, issn 0038-1101Article

Electronic structure of the Fe/Ge(110) interfacePICKETT, W. E; PAPACONSTANTOPOULOS, D. A.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8372-8378, issn 0163-1829Article

In-depth profiling of sputter-induced space-charge compensation in p-silicon Schottky barriersHELLINGS, G. J. A; STRAAYER, A; KIPPERMAN, A. H. M et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2067-2071, issn 0021-8979Article

Phase transitions in gold contacts to GaAsBEAM, E. III; CHUNG, D. D. L.Thin solid films. 1985, Vol 128, Num 3-4, pp 321-332, issn 0040-6090Article

Hafnium-n type silicon Schottky barriersRADZISZEWSKI, A; SKRABKA, T.Solid-state electronics. 1985, Vol 28, Num 7, pp 707-709, issn 0038-1101Article

Oxygen in titanium nitride diffusion barriersSINKE, W; FRIJLINK, G. P. A; SARIS, F. W et al.Applied physics letters. 1985, Vol 47, Num 5, pp 471-473, issn 0003-6951Article

Injection dans les structures métal. Couche mince p+-semiconducteur nBUZANEVA, E. V; LEVANDOVSKIJ, V. G; STRIKHA, V. I et al.Radiotehnika i èlektronika. 1985, Vol 30, Num 7, pp 1403-1408, issn 0033-8494Article

Ondes de magnétoplasma superficielles à la surface de séparation semiconducteur-métalZAKHAROV, V. A; SHTRAPENIN, G. L.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 802-807, issn 0015-3222Article

Contacts chimiques sur l'arséniure de gallium : utilisation de la méthode de dépôt autocatalytique = Ohmic contacts on GaAs: use of autocatalytic methodLAMOUCHE, Didier.1984, 207 pThesis

Interface resistanceSINKKONEN, J.Solid-state electronics. 1983, Vol 26, Num 11, pp 1111-1116, issn 0038-1101Article