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Contribution à l'étude des contacts ohmiques sur GaSb de type n et InAs de type pKhald, Hassan; Joullie, A.1989, 110 p.Thesis

Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructureHIGMAN, T. K; EMANUEL, M. A; COLEMAN, J. J et al.Journal of applied physics. 1986, Vol 60, Num 2, pp 677-680, issn 0021-8979Article

Contribution à l'étude de la réalisation du transistor bipolaire à hétérojonction GaAlAs/GaAs à structure autoalignée en technologie double mesa = Optimization of a self-aligned double mesa technology for AlGaAs/GaAs heterojonction bipolar transistorsBimuala, Bamueni; L'Hoir, Alain.1991, 217 p.Thesis

Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyMARSHALL, E. D; CHEN, W. X; WU, C. S et al.Applied physics letters. 1985, Vol 47, Num 3, pp 298-300, issn 0003-6951Article

Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistanceHENRY, H. G.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1390-1393, issn 0018-9383, 4 p.Article

AU-Be/Au and AU-Be/Cr/Au ohmic contacts to p-type InP and InGaAsPMALINA, V; VOGEL, K; ZELINKA, J et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1015-1021, issn 0268-1242Article

Interdiffusion profiles of AuGe/n-GaAs ohmic contacts studied by AESJUNG, T; NEBAUER, E.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K203-K206, issn 0031-8965Article

Réalisation de contacts ohmiques sur GaAs par des méthodes de recuits de très courte durée = Fabrication of ohmic contacts on GaAs by very short time annealing methodsMARTIN, G. M; MAKRAM-EBEID, S; BARBIER et al.1983, 48 p.Report

Study of the contact resistance of electroless Ni-B doped silicon using sodium borohydride as reducing agentSINGH, B. K; ANURADHA CHATTERJEE; DAW, A. N et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 3, pp 785-787, issn 0013-4651, 3 p.Article

Investigation of palladium as a barrier to gold diffusion in sintered ohmic contacts to n-GaAsPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 657-662, issn 0268-1242Article

Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAsWÜRFL, J; NASSIBIAN, A. G; HARTNAGEL, H. L et al.International journal of electronics. 1989, Vol 66, Num 2, pp 213-225, issn 0020-7217, 13 p.Article

CONTACTS OHMIQUES SUR SEMICONDUCTEURS DU TYPE A2B6 POUR UNE LARGE GAMME DE TEMPERATUREPEKAR GS; KHANROS LI; SHEJNKMAN MK et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 6; PP. 238-239; BIBL. 9 REF.Article

AU/GE BASED OHMIC CONTACTS TO GAASGROVENOR CRM.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 792-793; BIBL. 20 REF.Article

METHODE SIMPLE DE CONTROLE DE L'OHMICITE DES CONTACTS METAL-SEMICONDUCTEURGULYAEV IB; ZHDAN AG.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 2; PP. 203-204; BIBL. 3 REF.Article

BASES PHYSIQUES DE LA PREPARATION DE CONTACTS OHMIQUES METAL-SEMICONDUCTEUR. IISTRIKHA VI; POPOVA GD; BUZANEVA EV et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 20-35; BIBL. 4 P.Article

A MODEL OF OHMIC CONTACTS TO SEMICONDUCTORS.PELLEGRINI B; SALARDI G.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 791-798; BIBL. 28 REF.Article

OHMIC CONTACTS TO CDS.YAMAGUCHI M.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1325-1326; BIBL. 5 REF.Article

PRODUCTION DE CONTACTS OHMIQUES SUR DU GAAS SEMI-ISOLANTFOMIN NG; VOROB'EV YU V; TRETYAK OV et al.1974; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1974; NO 3; PP. 222-223; BIBL. 4 REF.Article

CONTACT OHMIQUE AVEC UN MONOCRISTAL DE SILICIUMSEVERDENKO VP; GURSKIJ LI; KOLESHKO VM et al.1972; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1972; NO 2; PP. 71-74; BIBL. 5 REF.Serial Issue

CONTACTS OHMIQUES SUR LES MONOCRISTAUX EN GASBSANDULOVA AV; GONCHAROV VP; SYDIR BI et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 216-218; BIBL. 10 REF.Serial Issue

ZUR FRAGE OHMSCHER KONTAKTE BEI CDS-EINKRISTALLEN = CONTACTS OHMIQUES SUR MONOCRISTAUX DE SULFURE DE CADMIUMENTZIAN W.1972; WISSENSCH. Z. UNIV. ROSTOCK. MATH.-NATURWISSENSCH. REIHE; DTSCH.; DA. 1972; VOL. 20; NO 7; PP. 409-412; ABS. RUSSE ANGL. FR.; BIBL. 13 REF.Serial Issue

Mise au point d'un procédé de photolithographie submicronique à 220 nm. : application à la réalisation de lasers InGaAsP 1,5 micron à réaction distribuéeGoarin, Elisabeth; Joullie, André.1989, 172 p.Thesis

A NEW TECHNIQUE FOR FABRICATION OF OHMIC CONTACTS TO GAAS DEVICES.OMPRAKASH.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 3-4; PP. 153-158; BIBL. 15 REF.Article

COMPLEX DISTRIBUTION EFFECTS OF THIN COMPONENT OHMIC-CONTACT LAYERS ON GAAS.WEISS BL; HARTNAGEL HL.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 12; PP. 263-264; BIBL. 5 REF.Article

CONTACTS OHMIQUES SUR DES MONOCRISTAUX CDCR2SE4KALINNIKOV VT; AMINOV TG; VIGILEVA ES et al.1975; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1975; NO 1; PP. 227-229; BIBL. 7 REF.Article

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