kw.\*:("Contact resistance")
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Interfacial Spin Filtering and Temperature Variation of Copper/GaMnAs Contact ResistanceEID, K. F; PAUDEL, B; OPONDO, N et al.IEEE transactions on magnetics. 2011, Vol 47, Num 10, pp 2636-2639, issn 0018-9464, 4 p.Conference Paper
Contact resistance in graphene-based devicesRUSSO, S; CRACIUN, M. F; YAMAMOTO, M et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 4, pp 677-679, issn 1386-9477, 3 p.Conference Paper
Scale Modeling on the Overheat Failure of Bus Contacts in Gas-Insulated SwitchgearsHONGTAO LI; NAIQIU SHU; XIAOWEN WU et al.IEEE transactions on magnetics. 2014, Vol 50, Num 2, issn 0018-9464, 7007404.1-7007404.4Conference Paper
Behavior of Copper-Aluminum Tribological Pair Under High Current DensitiesBANSAL, Dinesh G; STREATOR, Jeffrey L.IEEE transactions on magnetics. 2009, Vol 45, Num 1, pp 244-249, issn 0018-9464, 6 p., 2Conference Paper
Thermal hydraulic performance of 10 PPI aluminium foam as alternative for louvered fins in an HVAC heat exchangerDESCHAMPHELEIRE, Sven; DE JAEGER, Peter; HUISSEUNE, Henk et al.Applied thermal engineering. 2013, Vol 51, Num 1-2, pp 371-382, issn 1359-4311, 12 p.Article
Issues of contact etching and pre-treatment in Schottky contactLEE, Haksun; SHIN, Kyoungsub; CHO, Nammyun et al.Thin solid films. 2009, Vol 517, Num 14, pp 3844-3846, issn 0040-6090, 3 p.Conference Paper
Surface roughness effect on the metallic bipolar plates of a proton exchange membrane fuel cellLIN, Chien-Hung.Applied energy. 2013, Vol 104, pp 898-904, issn 0306-2619, 7 p.Article
Ti―B―C nanocomposite coatings deposited by magnetron sputteringLAURIDSEN, J; NEDFORS, N; JANSSON, U et al.Applied surface science. 2012, Vol 258, Num 24, pp 9907-9912, issn 0169-4332, 6 p.Article
The effect of coating and interface resistance on thermal performance of variable thickness annular composite finsPASHAH, S; ARIF, A. F. M; ZUBAIR, Syed M et al.Energy conversion and management. 2012, Vol 54, Num 1, pp 152-161, issn 0196-8904, 10 p.Article
Temperature dependence of specific contact resistivitySWIRHUN, S. E; SWANSON, R. M.IEEE electron device letters. 1986, Vol 7, Num 3, pp 155-157, issn 0741-3106Article
Effect of space angle on constriction resistance and contact resistance for the case of line contactSANO, Y.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 228-234, issn 0148-6411Article
Effect of measurement conditions on low-level contact resistanceMUNIESA, J; MOUSSON, J. Y.IEEE transactions on components, hybrids, and manufacturing technology. 1984, Vol 7, Num 1, pp 81-83, issn 0148-6411Article
Contact resistance between a solid lubricant composite and metalsWATANABE, Y; TAKAGI, R.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1983, Vol 66, Num 9, pp 557-558, issn 0387-236XArticle
Investigation of ring structures for metal-semiconductor contact resistance determinationWILLIS, A. J; BOTHA, A. P.Thin solid films. 1987, Vol 146, Num 1, pp 15-20, issn 0040-6090Article
Ion beam contacting of silicon. II: Antimony in n-siliconMERTENS, A; KLOSE, H; TANG, N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 1, pp 369-374, issn 0031-8965Article
Size effect on contact resistance and device scalingCOHEN, S. S; GILDENBLAT, G; BROWN, D. M et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 4, pp 978-980, issn 0013-4651Article
A method for creating reliable and low-resistance contacts between carbon nanotubes and microelectrodesCHANGXIN CHEN; LIYUE LIU; YANG LU et al.Carbon (New York, NY). 2007, Vol 45, Num 2, pp 436-442, issn 0008-6223, 7 p.Article
Contact resistance to undoped and phosphorus-doped hydrogenated amorphous silicon filmsKANICKI, J.Applied physics letters. 1988, Vol 53, Num 20, pp 1943-1945, issn 0003-6951Article
Contact resistivity of silicon/silicide structures formed by thin film reactionsFINETTI, M; GUERRI, S; NEGRINI, P et al.Thin solid films. 1985, Vol 130, Num 1-2, pp 37-45, issn 0040-6090Article
Influence of the voltage contacts on the four-terminal quantized Hall resistance in the nonlinear regimeJECKELMANN, B; JEANNERET, B.IEEE transactions on instrumentation and measurement. 1997, Vol 46, Num 2, pp 276-280, issn 0018-9456Conference Paper
Contact resistance in the scanning tunneling microscope at very small distancesFERRER, J; MARTIN-RODERO, A; FLORES, F et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 10113-10115, issn 0163-1829Article
Extremely low contact resistances for AlGaAs/GaAs modulation-doped field-effect transistor structuresKETTERSON, A; PONSE, F; HENDERSON, T et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2305-2307, issn 0021-8979Article
Characterization of the mechanical and thermal interface of copper films on carbon substrates modified by boron based interlayersSCHAFER, D; EISENMENGER-SITTNER, C; CHIRTOC, Mihai et al.Surface & coatings technology. 2011, Vol 205, Num 12, pp 3729-3735, issn 0257-8972, 7 p.Article
Measurement of contact resistance with microampere currentsYOSHIDA, H; TAKAHASHI, K.IEEE transactions on instrumentation and measurement. 1990, Vol 39, Num 5, pp 711-714, issn 0018-9456Article
Elastic oscillatory resistances of small contactsGARCIA, N; ESCAPA, L.Applied physics letters. 1989, Vol 54, Num 15, pp 1418-1420, issn 0003-6951Article