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Results 1 to 25 of 1263

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Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructureHIGMAN, T. K; EMANUEL, M. A; COLEMAN, J. J et al.Journal of applied physics. 1986, Vol 60, Num 2, pp 677-680, issn 0021-8979Article

Study of the contact resistance of electroless Ni-B doped silicon using sodium borohydride as reducing agentSINGH, B. K; ANURADHA CHATTERJEE; DAW, A. N et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 3, pp 785-787, issn 0013-4651, 3 p.Article

Investigation of palladium as a barrier to gold diffusion in sintered ohmic contacts to n-GaAsPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 657-662, issn 0268-1242Article

Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistanceHENRY, H. G.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1390-1393, issn 0018-9383, 4 p.Article

AU-Be/Au and AU-Be/Cr/Au ohmic contacts to p-type InP and InGaAsPMALINA, V; VOGEL, K; ZELINKA, J et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1015-1021, issn 0268-1242Article

Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAsWÜRFL, J; NASSIBIAN, A. G; HARTNAGEL, H. L et al.International journal of electronics. 1989, Vol 66, Num 2, pp 213-225, issn 0020-7217, 13 p.Article

Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contactsIKOSSI-ANASTASIOU, K; EZIS, A; RAI, A. K et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1786-1792, issn 0018-9383, 1Article

High-resolution transmission electron microscope studies of an Al-Ge-Ni Ohmic contact to GaAsGRAHAM, R. J; ERKAYA, H. H; EDWARDS, J. L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1502-1505, issn 0734-211XArticle

SIMS analysis of evaporated indium contacts on (HgCd)TeDEMANET, C. M; STRYDOM, H. J; BASSON, J. H et al.Applied surface science. 1986, Vol 25, Num 3, pp 279-287, issn 0169-4332Article

Development of Ohmic contact materials for GaAs integrated circuitsMURAKAMI, Masanori.Materials science reports. 1990, Vol 5, Num 6, issn 0920-2307, 45 p.Serial Issue

Effects of Au on NiGe(Au)W ohmic contacts to n-GaAsLUSTIG, N.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1224-1225, issn 0734-211XArticle

Alloyed contacts to susceptor rapid thermal annealed Si-implanted InPKATZ, A; PEARTON, S. J.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 1, pp 178-180, issn 0734-211XArticle

effect of thermal treatment on the properties of YBa2Cu3O7-x thin films with multilayer Al/Cr/Yb metals as ohmic contact electrodesJIA, Q. X; ANDERSON, W. A.Journal of electronic materials. 1990, Vol 19, Num 5, pp 443-447, issn 0361-5235Article

A design criterion to ameliorate ohmic contact to n-GaAsGUPTA, R. P; KHOKLE, W. S.Journal of applied physics. 1987, Vol 61, Num 9, pp 4694-4696, issn 0021-8979Article

Symposium on Materials Science of Contacts, Metallization and InterconnectsNARAYAN, J; ABOELFOTOH, M. O; SANCHEZ, J et al.Journal of electronic materials. 1996, Vol 25, Num 11, pp 1661-1771, issn 0361-5235Conference Proceedings

Pd/Ge ohmic contacts for GaAs metal-semiconductor field effect transistors : technology and performancePACCAGNELLA, A; WANG, L. C; CANALI, C et al.Thin solid films. 1990, Vol 187, Num 1, pp 9-18, issn 0040-6090Article

Back-gated field effect in a double two-dimensional electron gas structureSASA, S; MUTO, S; HIYAMIZU, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L674-L676, issn 0021-4922, 2Article

GeMoW refractory ohmic contact for GaAs/FaAlAs self-aligned heterojunction bipolar transistorsDUBON-CHEVALLIER, C; BLANCONNIER, P; BESOMBES, C et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 5, pp 1514-1519, issn 0013-4651Article

Preliminary studies on Mo-In-Mn based ohmic contacts to p-GaAsKALKUR, T. S; LU, Y. C.Journal of the Electrochemical Society. 1989, Vol 136, Num 11, pp 3549-3550, issn 0013-4651, 2 p.Article

Low resistance Ti/Pt/Au ohmic contacts to GaAs/AlxGa1-xAs heterostructures using open-tube Zn diffusionBULMAN, G. E; GWILLIAM, G. F; CHAMBERS, F. A et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2423-2426, issn 0013-4651, 4 p.Conference Paper

Molybdenum germanide ohmic contact to n-GaAsDAOUD-KETATA, K; DUBON-CHEVALLIER, C; BESOMBES, C et al.Electronics Letters. 1987, Vol 23, Num 1, pp 17-18, issn 0013-5194Article

Electromigration behaviour of SiO2-covered, large-grained, narrow Al-Si lines with ohmic contactsSCHREIBER, H.-U.Solid-state electronics. 1986, Vol 29, Num 11, pp 1167-1172, issn 0038-1101Article

High temperature reliability of refractory metal ohmic contacts to diamondROSER, M; HEWETT, C. A; MOAZED, K. L et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 7, pp 2001-2004, issn 0013-4651Article

A study of ohmic contacts on β-SiCIQBAL CHAUDHRY, M; BERRY, W. B; ZELLER, M. V et al.International journal of electronics. 1991, Vol 71, Num 3, pp 439-444, issn 0020-7217Article

Series resistance of devices with submicrometer source/drain areasLEE, V. V; BIELLAK, S. A; CHO, J. S et al.IEEE electron device letters. 1991, Vol 12, Num 12, pp 664-666, issn 0741-3106Article

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