Hydrogen/deuterium implantation for SI-dielectric interface in nanoscale devicesKUNDU, T; MISRA, D.Proceedings - Electrochemical Society. 2004, pp 346-355, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

The mechanism for failure of insulator-clad silicon structures during pulsed Joule heatingVAKAROV, B. S; KORLYAKOV, A. B; SHIER, J. S et al.Soviet physics. Technical physics. 1991, Vol 36, Num 9, pp 998-1000, issn 0038-5662Article

Surface roughness and electrical conduction of oxide/polysilicon interfacesFARAONE, L; HARBEKE, G.Journal of the Electrochemical Society. 1986, Vol 133, Num 7, pp 1410-1413, issn 0013-4651Article

Electrical properties at the Nd-doped SiSiO₂ interfaceZHANG, T. J; LI, S. Y.Solid-state electronics. 1987, Vol 30, Num 7, pp 775-776, issn 0038-1101Article

Effect of passivation on the enhanced low dose rate sensitivity of national LM124 operational amplifiersSEILER, John E; PLATTETER, Dale G; DUNHAM, Gary W et al.IEEE radiation effects data workshop. 2004, pp 42-46, isbn 0-7803-8697-3, 1Vol, 5 p.Conference Paper

Direct method for determination of the density of surface states from the charge pumping currentsLEVIN, M. N; LITMANOVICH, V. I; TATARINTSEV, A. V et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 1, pp 1-5, issn 1063-7826Article

Gating of germanium surfaces using pseudomorphic silicon interlayersVITKAVAGE, D. J; FOUNTAIN, G. G; RUDDER, R. A et al.Applied physics letters. 1988, Vol 53, Num 8, pp 692-694, issn 0003-6951Article

Optoelectrochemical impedance measurements: a new technique for the electrical characterization of dielectric/semiconductor interfacesSTRICOT, Y; CLECHET, P; MARTIN, J. R et al.Applied physics letters. 1986, Vol 49, Num 1, pp 32-34, issn 0003-6951Article

Study of the power capability of LDMOS and the improved methodsZHILIN SUN; WEIFENG SUN; YANGBO YI et al.Microelectronics and reliability. 2006, Vol 46, Num 5-6, pp 1001-1005, issn 0026-2714, 5 p.Article

Novel external field source by localization of electrons for improvement of solar cellsKÖNIG, D; EBEST, G.Solar energy materials and solar cells. 2003, Vol 75, Num 3-4, pp 335-343, issn 0927-0248, 9 p.Conference Paper

Realization and characterization of ultrathin GaAs-on-insulator structuresMORAN, P. D; HANSEN, D. M; MATYI, R. J et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 9, pp 3506-3509, issn 0013-4651Article

Superconducting transport properties of ohmic contacts = Propriétés de transport superconducteur des contacts ohmiquesIVANOV, Z. G.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 439-445, issn 0031-8965Article

Measurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profilingMARWICK, A. D; YOUNG, D. R.Journal of applied physics. 1988, Vol 63, Num 7, pp 2291-2298, issn 0021-8979Article

Synthesis of heteroepitaxial Si/CoSi₂/Si structures by Co implantation into SiVAN OMMEN, A. H; OTTENHEIM, J. J. M; THEUNISSEN, A. M. L et al.Applied physics letters. 1988, Vol 53, Num 8, pp 669-671, issn 0003-6951Article

Effet photovoltaïque dans les barrières CdO-CdGeP2nLUNEV, A. V; RUD, YU. V; TAIROV, M. A et al.Žurnal tehničeskoj fiziki. 1988, Vol 58, Num 7, pp 1415-1419, issn 0044-4642Article

Chemical and electronic structure of the SiO₂/Si interfaceGRUNTHANER, F. J; GRUNTHANER, P. J.Materials science reports. 1986, Vol 1, Num 2-3, pp 65-160, issn 0920-2307Article

Resonant tunneling through amorphous double-barrier structuresYAMAMOTO, H.Physica status solidi. B. Basic research. 1986, Vol 138, Num 1, pp K71-K73, issn 0370-1972Article

Electrical characterization of the boron-doped Si-SiO₂ interfaceGHANNAM, M. Y; MERTENS, R. P; DE KEERSMAECKER, R. F et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 7, pp 1264-1271, issn 0018-9383Article

Fabrication, structural and electrical properties of compressively strained Ge-on-insulator substratesHARTMANN, J. M; SANCHEZ, L; CRISTOLOVEANU, S et al.Semiconductor science and technology. 2010, Vol 25, Num 7, issn 0268-1242, c-075010.11Article

Tuning two-dimensional electron gas of ferroelectric/GaN heterostructures by ferroelectric polarizationJIHUA ZHANG; CHUANREN YANG; SONG WU et al.Semiconductor science and technology. 2010, Vol 25, Num 3, issn 0268-1242, 035011.1-035011.6Article

HCI degradation model based on the diffusion equation including the MVHR modelLACHENAL, D; MONSIEUR, F; REY-TAURIAC, Y et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1921-1924, issn 0167-9317, 4 p.Conference Paper

On the RTS phenomenon and trap nature in flash memory tunnel oxideFANTINI, P; CALDERONI, A; SEBASTIANI, A et al.Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 1998-2001, issn 0167-9317, 4 p.Conference Paper

A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potentialKIRAN, V. P; KUMAR, R. G; SINGH, A. K et al.International journal of electronics. 2005, Vol 92, Num 5, pp 295-302, issn 0020-7217, 8 p.Article

A neutron reflectivity study of silicon oxide thin filmsBERTAGNA, Valérie; MENELLE, Alain; PETITDIDIER, Sébastien et al.Proceedings - Electrochemical Society. 2003, pp 525-532, issn 0161-6374, isbn 1-56677-347-4, 8 p.Conference Paper

Si-SiO₂ interface trap properties and depedence with oxide thickness and with electrical stress in mosfets with oxides in the 1-2 nanometer rangeBAUZA, D; RAHMOUNE, F.Proceedings - Electrochemical Society. 2003, pp 22-38, issn 0161-6374, isbn 1-56677-347-4, 17 p.Conference Paper