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Results 1 to 25 of 824

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Electromigration in structures of aluminium on semi-insulating GaAsEJIMANYA, J. I.Thin solid films. 1986, Vol 144, Num 2, pp 151-158, issn 0040-6090Article

AU-Be/Au and AU-Be/Cr/Au ohmic contacts to p-type InP and InGaAsPMALINA, V; VOGEL, K; ZELINKA, J et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1015-1021, issn 0268-1242Article

Properties of the Al/Mo/Ti/PtSi/Si metallization systemCHEN ZHENGMING; XIU JIANLIANG; LUO JINSHENG et al.Chinese physics. 1988, Vol 8, Num 4, pp 1097-1101, issn 0273-429X, 5 p.Article

Performance of In-p InP contactBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1715-1719, issn 0033-8494Article

Photo-induced effect on the rectification behaviour of Al/Al2O3/InTe/Bi sandwich structuresROUSINA, R; SHIVAKUMAR, G. K.Crystal research and technology (1979). 1988, Vol 23, Num 9, pp K133-K135, issn 0232-1300Article

Analysis of characteristics of silicon metal/insulator semiconductor tunnel diodes with D.C.-plasma-grown oxideBECK, R. B; RUZYLLO, J.Thin solid films. 1986, Vol 136, Num 2, pp 173-180, issn 0040-6090Article

Photoelectric yield spectra of metal-semiconductor structuresENGSTROM, O; PETTERSSON, H; SERNELIUS, B et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp 691-701, issn 0031-8965Article

Electronic structure of the Fe/Ge(110) interfacePICKETT, W. E; PAPACONSTANTOPOULOS, D. A.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8372-8378, issn 0163-1829Article

Phase reactions at semiconductor metallization interfacesBHANSALI, A. S; KO, D. H; SINCLAIR, R et al.Journal of electronic materials. 1990, Vol 19, Num 11, pp 1171-1175, issn 0361-5235Conference Paper

Defect generation by Schottky contacts on n-GaAsMEYER, E; HEYMANN, G.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 491-496, issn 0734-211X, 6 p.Article

Informed device design and gain-speed strade-off for self-aligned polysilicon-emitter transistorsYUNG, S.-Y; BURK, D. E.Solid-state electronics. 1988, Vol 31, Num 7, pp 1139-1150, issn 0038-1101Article

Interface growth with atoms and preformed clusters: morphology and Schottky barrier variations for Au/inP(110)ALDAO, C. M; VITOMIROV, I. M; WADDILL, G. D et al.Applied physics letters. 1988, Vol 53, Num 26, pp 2647-2649, issn 0003-6951Article

Electronic structure of metal-semiconductor superlatticeSHIRAISHI, K; KAMIMURA, H.Journal of the Physical Society of Japan. 1986, Vol 55, Num 5, pp 1716-1727, issn 0031-9015Article

Electromigration in bipolar NPN transistorsWADA, T; SUGIMOTO, M; AJIKI, T et al.Solid-state electronics. 1988, Vol 31, Num 9, pp 1409-1412, issn 0038-1101Article

Photoluminescence variations associated with the deposition of palladium electrical contacts on detector-grade mercuric iodideWONG, D; BAO, X. J; SCHLESINGER, T. E et al.Applied physics letters. 1988, Vol 53, Num 16, pp 1536-1538, issn 0003-6951Article

Edge channels and the role of contacts in the quantum hall regimeMÜLLER, G; WEISS, D; KOCH, S et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 12, pp 7633-7636, issn 0163-1829Article

Relationship of ambient deposition conditions to formation of thermally activated voids in Al/Si interconnectsTICE, W; SLUSSER, G.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 106-107, issn 0734-211X, 2 p.Article

Effects of InP surface treatment on the electrical properties and structures of AlN/n-InP interfaceFUJIEDA, S; AKIMOTO, K; HIROSAWA, I et al.Japanese journal of applied physics. 1989, Vol 28, Num 1, pp L16-L18, issn 0021-4922, part 2Article

Experimental Richardson constant of metal-semiconductor Schottky barrier contactsTAM, N. T; CHOT, T.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp K91-K95, issn 0031-8965Article

Effective Richardson constant of sputtered Pt-Si Schottky contactsTOYAMA, N.Journal of applied physics. 1988, Vol 64, Num 5, pp 2515-2518, issn 0021-8979Article

Influence des états localisés dans la barrière sur le courant tunnel de fluctuations traversant le contact métal-semiconducteurRAJKH, M. EH; RUZIN, I. M; SHKLOVSKIJ, B. I et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 11, pp 1979-1985, issn 0015-3222Article

Chemical reactions and Schottky barrier formation at Cr/n-CdTe interfacesDHARMADASA, I. M; PATTERSON, M. H; WILLIAMS, R. H et al.Semiconductor science and technology. 1988, Vol 3, Num 9, pp 926-930, issn 0268-1242Article

Direct observation of solid-phase epitaxial growth of Si at contact holes through Al-Si alloyHIRASHITA, N; KINOSHITA, M; AJIOKA, T et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 12, pp 3159-3160, issn 0013-4651Article

Electroless deposition as a means of obtaining ohmic contacts: Au/Pd onto GaAsLAMOUCHE, D; MARTIN, J. R; CLECHET, P et al.Solid-state electronics. 1986, Vol 29, Num 6, pp 625-632, issn 0038-1101Article

Infrared absorption in PtSi-Si interface statesFLOHR, T; SCHULZ, M.Applied physics letters. 1986, Vol 48, Num 22, pp 1534-1535, issn 0003-6951Article

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