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ti.\*:("Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium I: Self-Organization in Semiconductors-Fundamentals and Applications, Strasbourg, France, June 4-8th 2001")

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Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium I: Self-Organization in Semiconductors-Fundamentals and Applications, Strasbourg, France, June 4-8th 2001DÖHLER, Gottfried H.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, issn 0921-5107, 208 p.Conference Proceedings

Anisotropic surface structure in ordered strained InGaPHASENÖHRL, S; KUDELA, R; NOVAK, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 134-138, issn 0921-5107Conference Paper

Control of morphological transitions during heteroepitaxial island growth by reflection high-energy electron diffractionCIMALLA, V; ZEKENTES, K; VOUROUTZIS, N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 186-190, issn 0921-5107Conference Paper

Growth and magnetic properties of (Ga, Mn)As as digital ferromagnetic heterostructuresKAWAKAMI, R. K; JOHNSTON-HALPERIN, E; CHEN, L. F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 209-212, issn 0921-5107Conference Paper

Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)REUTER, D; SCHAFMEISTER, P; KOCH, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 230-233, issn 0921-5107Conference Paper

Electronic structure of InAs self-assembled quantum dotsSCHMIDT, K. H; BOCK, C; KUNZE, U et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 238-242, issn 0921-5107Conference Paper

Redistribution of localised excitons in CdSe/ZnSe quantum dot structuresSTRASSBURG, M; DWORZAK, M; HEITZ, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 302-306, issn 0921-5107Conference Paper

Self-organised growth of silicon structures on silicon during oxide desorptionPALERMO, V; JONES, D.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 220-224, issn 0921-5107Conference Paper

Self-organization processes in semiconductor under photo-induced Gunn effectGORLEY, P. M; HORLEY, P. P; GONZALEZ-HERNANDEZ, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 286-291, issn 0921-5107Conference Paper

Self-organized quantum disks for a two-state systemTEMMYO, J; KAMADA, H; KURAMOCHI, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 153-157, issn 0921-5107Conference Paper

Self-organized technology of anisotropic etching of semiconductors for optoelectronics applicationDMITRUK, N. L; BORKOVSKAYA, O. Yu; MAYEVA, O. I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 277-281, issn 0921-5107Conference Paper

Chaos-order transitions at corroding silicon surfacePARKHUTIK, V.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 269-276, issn 0921-5107Conference Paper

Controlling size distribution in silicon brush-like superstructures grown by self-organisationKLIMOVSKAYA, A. I; OSTROVSKII, I. P; EFREMOV, A. A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 298-301, issn 0921-5107Conference Paper

Self-organization of packing defects and Anderson localization in A3B6-type layered crystalsKYAZYM-ZADE, A. G; ABASOVA, A. Z; SALMANOV, V. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 282-285, issn 0921-5107Conference Paper

Electronic coupling of vertically coupled quantum dots: effect of the time-dependent magnetic fieldBEN SALEM, E; JAZIRI, S; BENNACEUR, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 213-219, issn 0921-5107Conference Paper

Polarization-sensitive opto-electronic devices based on spontaneous self-ordering in semiconductor alloysKIESEL, Peter; SPIELER, Jochen; KIPPENBERG, Thomas et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 307-311, issn 0921-5107Conference Paper

Role of the substrate imperfections on the island nucleation and defect formation: case of GaSb/GaAs(001)DJAFARI ROUHANI, M; KASSEM, H; DALLA TORRE, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 181-185, issn 0921-5107Conference Paper

Self-organized ordering in self-assembled quantum dot superlatticesSPRINGHOLZ, G; HOLY, V; MAYER, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 143-152, issn 0921-5107Conference Paper

Surface morphology of low temperature grown GaAs on singular and vicinal substratesAPOSTOLOPOULOS, G; BOUKOS, N; HERFORT, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 205-208, issn 0921-5107Conference Paper

Two-dimensional organization of As clusters in GaAsCHALDYSHEV, V. V.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 195-204, issn 0921-5107Conference Paper

Optical properties of self-assembled lateral superlattices in AlInAs epitaxial layers and AlAs/InAs short-period superlatticesFRANCOEUR, S; NORMAN, A. G; HANNA, M. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 118-124, issn 0921-5107Conference Paper

Scanning tunneling miscroscopy study of InAs islands grown on GaAs(001) substratesSUEKANE, Osamu; HASEGAWA, Shigehiko; TAKATA, Masahiro et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 158-163, issn 0921-5107Conference Paper

Temperature and excitation dependence of the luminescence spectra of InAs quantum dotsHJIRI, M; HASSEN, F; MAAREF, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 255-258, issn 0921-5107Conference Paper

Effect of strain and ordering on the band-gap energy of InGaPNOVAK, J; HASENÖHRL, S; KUDELA, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 139-142, issn 0921-5107Conference Paper

Optical and electrical spectroscopy of defects in low temperature grown GaAsSTEEN, C; KIESEL, P; TAUTZ, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 191-194, issn 0921-5107Conference Paper

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