Surface analysis of methylchlorosilane formation catalystsFRANK, T. C; KESTER, K. B; FALCONER, J. L et al.Journal of catalysis (Print). 1985, Vol 95, Num 2, pp 396-405, issn 0021-9517Article

New morphological types of CuSi precipitates in silicon and their electrical effects = Neue morphologische Typen von CuSi-Ausscheidungen in Silizium und ihre elektrischen EffekteGLEICHMANN, R; BLUMTRITT, H; HEYDENREICH, J et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 527-538, issn 0031-8965Article

Precipitation of copper silicide on glide dislocations in silicon at low temperatureGOTTSCHALK, H.Physica status solidi. A. Applied research. 1993, Vol 137, Num 2, pp 447-461, issn 0031-8965Article

CONTACT RESISTANCE BEHAVIOR OF THE PD₂ SI-AL CU SI SYSTEMSUGERMAN A; TSAI HJ; KRISTOFF JS et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 5; PP. 943-955; BIBL. 4 REF.Article

THERMODYNAMIC INVESTIGATION OF COPPER+SILICON MELTSCASTANET R.1979; J. CHEM. THERMODYN.; ISSN 0021-9614; GBR; DA. 1979; VOL. 11; NO 8; PP. 787-791; BIBL. 12 REF.Article

Interfaces structure in relation with the mechanisms in the reaction copper-silicon = Structure des surfaces limites en relation avec les mécanismes de réaction cuivre-silicium = Grenzflaechenstrukturen im Zusammenhang mit den Mechanismen der Reaktion Kupfer-SiliziumWEBER, G; GILLOT, B; BARRET, P et al.Physica status solidi. A. Applied research. 1983, Vol 75, Num 2, pp 567-576, issn 0031-8965Article

Addition of Cu for carbon coated si-based composites as anode materials for lithium-ion batteriesKIM, Jae-Hun; KIM, Hansu; SOHN, Hun-Joon et al.Electrochemistry communications. 2005, Vol 7, Num 5, pp 557-561, issn 1388-2481, 5 p.Article

Deduction of a three-phase model for the (√3 x √3)R30°-Cu₂Si/Cu(1 1 1) surface alloySHUTTLEWORTH, I. G.Applied surface science. 2009, Vol 256, Num 3, pp 636-639, issn 0169-4332, 4 p.Article

Diffusion barrier performance of reactively sputtered Ta-W-N between Cu and SiYUZHANG LIU; SHUANGXI SONG; DALI MAO et al.Microelectronic engineering. 2004, Vol 75, Num 3, pp 309-315, issn 0167-9317, 7 p.Article

SUPRACONDUCTIVITE DU COMPOSE CECU₂SI₂ALIEV FG; BRANDT NB; LUTSIV RV et al.1982; PIS'MA V ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0370-274X; SUN; DA. 1982; VOL. 35; NO 10; PP. 435-438; BIBL. 5 REF.Article

THIN FILM METALLIZATION STUDIES AND DEVICE LIFETIME PREDICTION USING AL-SI AND AL-CU-SI CONDUCTOR TEST BARSDANSO KA; TULLOS L.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 4; PP. 513-527; BIBL. 26 REF.Article

MASSENSPEKTROMETRISCHE BESTIMMUNG DER DISSOZIATIONSENERGIEN DER GASFOERMIGEN MOLEKUELE CUSI(G) UND AGSI(G) = DETERMINATION PAR SPECTROMETRIE DE MASSE DES ENERGIES DE DISSOCIATION A L'ETAT GAZEUX DE CUSI(G) ET AGSI(G)RIEKERT G; LAMPARTER P; STEEB S et al.1981; Z. METALLKD.; ISSN 0044-3093; DEU; DA. 1981; VOL. 72; NO 11; PP. 765-768; ABS. ENG; BIBL. 15 REF.Article

Solidification study of vertical float zoned CeCu₂Si₂BI, Y. J; ABELL, J. S; FORT, D et al.Journal of alloys and compounds. 1994, Vol 207-08, pp 325-328, issn 0925-8388Conference Paper

Measuring the electronic structure of disordered overlayers by electron momentum spectroscopy : the Cu/Si interfaceNIXON, K. L; VOS, M; BOWLES, C et al.Surface and interface analysis. 2006, Vol 38, Num 8, pp 1236-1241, issn 0142-2421, 6 p.Article

Resistivity anomalies due to charge fluctuations = Anomalies de résistivité dues aux fluctuations de chargeZIPPER, E; DRZAZGA, M; FREIMUTH, A et al.Journal of magnetism and magnetic materials. 1987, Vol 71, Num 1, pp 119-123, issn 0304-8853Article

Methylsilane on Cu(111), a STM study of the ( 3 × 3)R30°-Cu₂Si surface silicideMENARD, Hervé; HORN, Andrew B; TEAR, Steven P et al.Surface science. 2005, Vol 585, Num 1-2, pp 47-52, issn 0039-6028, 6 p.Article

Magnetic structure of the UCu_xSi_2-x systemPECHEV, Stanislas; ROISNEL, Thierry; CHEVALIER, Bernard et al.Solid state sciences. 2000, Vol 2, Num 8, pp 773-780, issn 1293-2558Article

Supercurrent through thick Cu layer between Nb and heavy-fermion superconductors : CeCu_2.2Si₂ and UPd₂Al₃KOYAMA, T; SUMIYAMA, A; NAKAGAWA, M et al.Journal of the Physical Society of Japan. 1998, Vol 67, Num 5, pp 1797-1798, issn 0031-9015Article

Complex magnetic ordering in Nd₂CuSi₂CHENG TIEN; LUDWIG LUO.Solid state communications. 1998, Vol 107, Num 6, pp 295-299, issn 0038-1098Article

Reactivity of commercial silicon and silicides towards copper(I) chloride. Effect of aluminium, calcium and iron on the formation of copper silicideGILLOT, B; WEBER, G; SOUHA, H et al.Journal of alloys and compounds. 1998, Vol 270, Num 1-2, pp 275-280, issn 0925-8388Article

Upper critical field of CeCu₂Si₂ at very high pressureVARGOZ, E; JACCARD, D; GENOUD, J. Y et al.Solid state communications. 1998, Vol 106, Num 9, pp 631-636, issn 0038-1098Article

Formation of Cooper pair and superconducting transition temperature in a heavy fermion material : CeCu₂Si₂TEWARI, S. P; KAPOOR, C.Solid state communications. 1998, Vol 109, Num 3, pp 201-206, issn 0038-1098Article

Preparation of Cu-Si bulk nanometre alloy under high pressureYAO, B; LI, D. J; WANG, A. M et al.Physica. B, Condensed matter. 1995, Vol 212, Num 1, pp 61-66, issn 0921-4526Article

The effect of composition on the occurrence of a second phase transition on the vicinity of T_c in CeCu₂Si₂MODLER, R; LANG, M; GEIBEL, C et al.Physica. B, Condensed matter. 1995, Vol 206-07, pp 586-588, issn 0921-4526Conference Paper

Passivation of copper by silicide formation in dilute silaneHYMES, S; MURARKA, S. P; SHEPARD, C et al.Journal of applied physics. 1992, Vol 71, Num 9, pp 4623-4625, issn 0021-8979Article