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Charle losses of N-doped trench cellsRISCH, L; MALY, R; BERGNER, W et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2223-L2226, issn 0021-4922, part 2Article

Tracking degradation and pyrolysis of EPDM insulatorsPEREIRA NUNES, S; DA COSTA, R. A; BARBOSA, S. P et al.IEEE transactions on electrical insulation. 1989, Vol 24, Num 1, pp 99-105, issn 0018-9367, 7 p.Article

Effect of annealing on the ac leakage components of the ZnO varistor. II, Capacitive currentGUPTA, T. K; STRAUB, W. D.Journal of applied physics. 1990, Vol 68, Num 2, pp 851-855, issn 0021-8979Article

Hot-electron-induced minority-carrier generation in bipolar junction transistorsISHIUCHI, H; TAMBA, N; SHOTT, J. D et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 490-492, issn 0741-3106, 3 p.Article

High-energy oxide traps and anomalous soft-programming in Flash memoriesIELMINI, D; SPINELLI, A. S; LACAITA, A. L et al.International Electron Devices Meeting. 2004, pp 493-496, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Niobia-stabilized tantalum pentoxide (NST): novel high-k dielectrics for low-temperature process of MIM capacitorsMATSUI, Yuichi; HIRATANI, Masahiko; ASANO, Isamu et al.IEDm : international electron devices meeting. 2002, pp 225-228, isbn 0-7803-7462-2, 4 p.Conference Paper

Internal degradation of polymer housed metal oxide surge arresters in very humid ambient conditionsLAHTI, K; RICHTER, B; KANNUS, K et al.IEE conference publication. 1999, pp 2.234.S13-2.237.S13, issn 0537-9989, isbn 0-85296-719-5Conference Paper

The modelling and harmonic content of the resistive component of current in ZnO varistorsVAN DER LINDE, F. J; SWIFT, D. A.IEE conference publication. 1999, pp 2.258.S13-2.261.S13, issn 0537-9989, isbn 0-85296-719-5Conference Paper

Recommendations for safe current limits for electrocardiographs : a statement for healthcare professionals from the Committee on Electrocardiography, American Heart AssociationLAKS, M. M; ARZBAECHER, R; BAILEY, J. J et al.Circulation (New York, N.Y.). 1996, Vol 93, Num 4, pp 837-839, issn 0009-7322Article

Leakage current consideration of capillary electrophoresis under electroosmotic controlCHIN-TIAO WU; TUNG-LIANG HUANG; LEE, C. S et al.Journal of chromatography. 1993, Vol 652, Num 1, pp 277-281, issn 0021-9673Conference Paper

Field-induction-drain thin-film transistors for liquid-crystal display applicationsTANAKA, K; SUYAMA, S; KATO, K et al.Japanese journal of applied physics. 1991, Vol 30, Num 11B, pp 3302-3307, issn 0021-4922, 1Article

Thermally stable, low-leakage self-aligned titanium silicide junctionsYOSHIDA, T; OGAWA, S; OKUDA, S et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 6, pp 1914-1917, issn 0013-4651Article

Counterdoping of MOS channel (CDC). A new technique of improving suppression of latching in insulated gate bipolar transistorsCHOW, T. P; BALIGA, B. J; PATTANAYAK, D. N et al.IEEE electron device letters. 1988, Vol 9, Num 1, pp 29-31, issn 0741-3106Article

Influence de l'échauffement des porteurs sur les courants de fuite dans les hétérojonctions doubles InGaAsP/InPPISHCHALKO, V. D; TOLSTIKHIN, V. I.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 9, pp 1617-1622, issn 0015-3222Article

Junction leakage current in BF2+-implanted, rapid-thermal-annealed diodesMIKOSHIBA, H; ABIKO, H; KANAMORI, M et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp L631-L633, issn 0021-4922, 2Article

Effects of temperature and moisture on module leakage currentsMON, G; WEN, L; ROSS, R. G. JR et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1179-1185Conference Paper

Sub-terahertz testing of silicon MOSFETSTILLMAN, W; VEKSLER, D; ELKHATIB, T. A et al.Electronics Letters. 2008, Vol 44, Num 22, pp 1325-1327, issn 0013-5194, 3 p.Article

Field experience with non-ceramic hollow-core insulatorsSÖRQVIST, T; GUBANSKI, S. M; VLASTOS, A. E et al.IEE conference publication. 1999, pp 4.42.S19-4.45.S19, issn 0537-9989, isbn 0-85296-719-5Conference Paper

A proposal of a method for analysing the leakage characteristics of 1.3 μm semiconductor buried heterostructure lasersUMEBU, I.Semiconductor science and technology. 1993, Vol 8, Num 1, pp 63-66, issn 0268-1242Article

Water formation in air-encapsulated capsules with hydrogen dissolved in sidewall metalsIWAMATSU, S.Journal of the Electrochemical Society. 1991, Vol 138, Num 6, pp L17-L19, issn 0013-4651Article

The effect of phosphorus doping on the direct current leakage of anodic oxide films on tantalumTRIPP, T. B; FOLEY, K. B.Journal of the Electrochemical Society. 1990, Vol 137, Num 8, pp 2528-2530, issn 0013-4651, 3 p.Article

The characterization of the variability of silicon wafers by leakage current measurementsMURRAY, E. M; SUGANO, T; ASADA, K et al.Japanese journal of applied physics. 1986, Vol 25, Num 2, pp L99-L101, issn 0021-4922, 2Article

Random and systematic defect analysis using IDDQ signature analysis for understanding fails and guiding test decisionsNIGH, Phil; GATTIKER, Anne.International Test Conference. 2004, pp 309-318, isbn 0-7803-8580-2, 1Vol, 10 p.Conference Paper

Etude du phénomène d'humidification de depôts naturels et artificiels de pollution sur des isolateurs électriques = Study of humidification process of natural and artificial pollution deposits on electrical insulatorsSaison, Jean-Yves; Mirabel, Philippe.1994, 205 p.Thesis

Origins of reverse bias leakage currents in hydrogenated amorphous silicon p-i-n detector structuresARCH, J. K; FONASH, S. J.Applied physics letters. 1992, Vol 60, Num 6, pp 757-759, issn 0003-6951Article

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