Photoemission of electrons into electrolyte from underformed and plastically deformed indium electrodesDRAGON, R; WACKE, S; GORECKI, T et al.Journal of materials science letters. 1994, Vol 13, Num 23, pp 1670-1672, issn 0261-8028Article

Caractéristiques de la variation du courant électrique en fonction de l'énergie du quanta de lumière sur une électrode en plombROTENBERG, Z. A; GROMOVA, N. V.Èlektrohimiâ. 1988, Vol 24, Num 7, pp 995-997, issn 0424-8570Article

Photochemical properties of a riboflavins/cytochrome P450 2B4 complexSHUMYANTSEVA, Victoria V; BULKO, Tatiana V; SCHMID, Rolf D et al.Biosensors & bioelectronics. 2002, Vol 17, Num 3, pp 233-238, issn 0956-5663Article

Photoreceptor consisting of spiropyran-bacteriorhodopsin films for photosignal enhancementJUNHONG MIN; CHOI, J.-W; WON HONG LEE et al.Biosensors & bioelectronics. 1998, Vol 13, Num 11, pp 1151-1155, issn 0956-5663Article

FTO/SnSe heterojunction for photovoltaic conversionSINGH, J. P; BEDI, R. K.Japanese journal of applied physics. 1990, Vol 29, Num 5, pp L792-L793, issn 0021-4922, 2Article

Photocurrents on passive and active-passive metalsDAVID BURLEIGH, T.Corrosion science. 1990, Vol 31, pp 745-750, issn 0010-938XConference Paper

Processus de photodiffusion à l'interface métal/électrolyte dans le cas de courants photo-électriques élevésBRODSKIJ, A. M; DAJKHIN, L. I.Èlektrohimiâ. 1989, Vol 25, Num 4, pp 499-502, issn 0424-8570Article

Théorie du photo-courant transitoire dans un semi-conducteur organique placé dans un champ électrique fortASANOV, A. N.Žurnal fizičeskoj himii. 1989, Vol 63, Num 8, pp 2169-2174, issn 0044-4537Article

Family of optoelectronic photocurrent reconfigurable universal (or multifunctional) logical elements (OPR ULE) on the basis of continuous logic operations (CLO) and current mirrors (CM)KRASILENKO, Vladimir G; OGORODNIK, Konstantin V; NIKOLSKYY, Aleksandr I et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8001, issn 0277-786X, isbn 978-0-8194-8575-5, 2Vol, 80012Q.1-80012Q.14, 2Conference Paper

Terahertz detection using photon-assisted tunnelling in triple-barrier quantum well structuresMILNE, A. I; CURTIS, P. D; MISSOUS, M et al.High frequency postgraduate student colloquium. 2004, isbn 0-7803-8426-1, 1Vol, p. 15Conference Paper

Interference effects influence on short circuit current of resonant-cavity enhanced photodetectorsDURIC, Z; DANKOVIC, T; RANDELOVIC, D et al.International conference on microelectronic. 1997, pp 265-268, isbn 0-7803-3664-X, 2VolConference Paper

Influence of inhomogeneity of the absorption of signal radiation on the frequency characteristic of a high-resisitivity extrinsic photoresitorBLOKHIN, I. K; KHOLODNOV, V. A; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1992, Vol 26, Num 4, pp 417-420, issn 0038-5700Article

Studies of silicon photoelectrochemical cells under high injection conditionsAMIT KUMAR; LEWIS, N. S.Applied physics letters. 1990, Vol 57, Num 25, pp 2730-2732, issn 0003-6951Article

An analysis of the photocurrent induced in a semi-infinite Schottky barrier by a time varying focussed laser beamPESTER, P. D; WILSON, T.Physica status solidi. A. Applied research. 1988, Vol 105, Num 2, pp 649-660, issn 0031-8965Article

Picosecond photoemission and recombination dynamics at the metal-liquid interfaceSCOTT, T. W.Journal of physical chemistry (1952). 1986, Vol 90, Num 9, pp 1739-1741, issn 0022-3654Article

Dark fringe operation and noise reduction with optical subtraction approach and power allocationTENG, Hui-Kang; LANG, Kuo-Chen.Optics communications. 2010, Vol 283, Num 11, pp 2394-2401, issn 0030-4018, 8 p.Article

The temperature dependence of a spectral characteristic of a silicon solar cellBAKHRONOV, Sh. N; DADAMUKHAMEDOV, S; KARIMOV, A. V et al.Applied solar energy. 2001, Vol 37, Num 1, pp 12-14, issn 0003-701XArticle

Study of passive films on stainless steels by photocurrent measurementsDI PAOLA, A.Corrosion science. 1990, Vol 31, pp 739-744, issn 0010-938XConference Paper

Influence de la nature du métal sur les caractéristiques de la variation du courant photo-électrique en fonction de l'énergie des quantaROTENBERG, Z. A; NEKRASOVA, N. V.Èlektrohimiâ. 1989, Vol 25, Num 1, pp 114-115, issn 0424-8570Article

On the evaluation of the flatband potential from photocurrent measurementsDEAN, M. H; NEWMARK, A. R; STIMMING, U et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1988, Vol 244, Num 1-2, pp 307-310, issn 0022-0728Article

Etats électroniques superficiels à l'interface TiO2/électrolytePANOSYAN, ZH. R; KASAMANYAN, Z. A; MARGARYAN, A. L et al.Èlektrohimiâ. 1988, Vol 24, Num 7, pp 949-953, issn 0424-8570Article

Surface plasma-enhanced internal photoemission in gallium arsenide Schottky diodesTOROSIAN, K. M; KARAKASHIAN, A. S; TENG, Y. Y et al.Applied optics. 1987, Vol 26, Num 13, pp 2650-2652, issn 0003-6935Article

Experiments and modelling of double-emitter HPTs with different emitter-area ratios for functional applicationsTAN, S. W; CHEN, H. R; LIN, A. H et al.Semiconductor science and technology. 2004, Vol 19, Num 11, pp 1213-1219, issn 0268-1242, 7 p.Article

Buffer effect on the photoelectrochemical response of bacteriorhodopsinSAGA, Y; WATANABE, T; KOYAMA, K et al.Analytical sciences. 1999, Vol 15, Num 4, pp 365-369, issn 0910-6340Article

Study of the improvement of photoelectric response and stability on a 9-cis-retinal Langmuir-Blodgett film containing ultrafine gold particlesSUN, Y. H; LI, J. R; LI, B. F et al.Langmuir. 1997, Vol 13, Num 22, pp 5799-5801, issn 0743-7463Article