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The Dark Current and Hot Pixel Percentage of James Webb Space Telescope 5 μm Cutoff HgCdTe Detector Arrays as Functions of TemperatureRAUSCHER, Bernard J; LINDLER, Don J; MOTT, David B et al.Publications of the Astronomical Society of the Pacific. 2011, Vol 123, Num 906, pp 953-957, issn 0004-6280, 5 p.Article

Heavy Fullerene for Semi-Conducting Infrared Photo Diodes (1.5―5.0 μm)SHERSTNEV, V. V; CHARYKOV, N. A; SEMENOV, K. N et al.Fullerenes, nanotubes, and carbon nanostructures (Print). 2012, Vol 20, Num 1-8, pp 648-655, issn 1536-383X, 8 p.Article

Beware the claims when shopping for a scientific cameraMCANALLY, Gary.Laser focus world. 2002, Vol 38, Num 1, pp 147-150, issn 1043-8092, 3 p.Article

A 1/3-in 510(H)×492(V) CCD image sensor with mirror image functionHOJO, J; NAITO, Y; MORI, H et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 5, pp 954-959, issn 0018-9383Article

Testing of an Extended-Wavelength InGaAs Array in an Astronomical SpectrographNELSON, Matthew; LIHONG YAO; WONG, Andre F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 774224.1-774224.10Conference Paper

Control of dark currents in multi-quantum well solar cells by use of thin tunnel barriersOKADA, Yoshitaka; TAKEDA, Toru; KAWABE, Mitsuo et al.sans titre. 2002, pp 1031-1034, isbn 0-7803-7471-1, 4 p.Conference Paper

Temperature dependence of dark current in a CCDWIDENHORN, Ralf; BLOUKE, Morley M; WEBER, Alexander et al.SPIE proceedings series. 2002, pp 193-201, isbn 0-8194-4409-XConference Paper

High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsLEVINE, B. F; BETHEA, C. G; HASNAIN, G et al.Applied physics letters. 1990, Vol 56, Num 9, pp 851-853, issn 0003-6951Article

A hybrid liquid nitrogen system for the cooling of the ESO OmegaCAM detectorLIZON, J. L; SILBER, A; JAKOB, G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7739, issn 0277-786X, isbn 978-0-8194-8229-7 0-8194-8229-3, 2Vol, 77393H.1-77393H.6, 2Conference Paper

Dark current mechanisms in HgCdTe photodiodesSU, Y. K; CHANG, S. J; JUANG, F. S et al.SPIE proceedings series. 1998, pp 256-266, isbn 0-8194-2873-6Conference Paper

Very low noise photodetector based on the single electron transistorCLELAND, A. N; ESTEVE, D; URBINA, C et al.Applied physics letters. 1992, Vol 61, Num 23, pp 2820-2822, issn 0003-6951Article

Caractérisation des détecteurs du spectromètre infrarouge OMEGA embarqué sur la mission spatiale Mars '96. Implications sur l'étude de la planète Mars = Caracterisation of the detectors of the OMEGA infrared spectrometer on board the Mars '96 space mission. Implications on the study of the planet MarsHello, Yann; Langevin, Y.1995, 160 p.Thesis

The reduction of Si diodes dark current for X-ray dosimetryAHMAD SHARIEF ODEH.International journal of radiation applications and instrumentation. Part C, Radiation physics and chemistry. 1994, Vol 44, Num 1-2, pp 57-59, issn 1359-0197Conference Paper

Fundamental performance differences of CMOS and CCD imagers: Part IVJANESICK, James; PINTER, Jeff; POTTER, Robert et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 77420B.1-77420B.30Conference Paper

The UCAM CCD system of LAMOSTLEI JIA; MINGZHI WEI; SICHENG ZOU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7733, issn 0277-786X, isbn 978-0-8194-8223-5, 77335E.1-77335E.11, 3Conference Paper

Active area shape influence on the dark current of CMOS imagersSHCHERBACK, Igor; BELENKY, Alexander; YADID-PECHT, Orly et al.SPIE proceedings series. 2002, pp 117-124, isbn 0-8194-4409-XConference Paper

Sensibilité d'un récepteur optique avec courant d'obscuritéDOROFEEV, A. N.Radiotehnika (Moskva). 1988, Num 3, pp 83-85, issn 0033-8486Article

CONSTRAINING PERTURBATIVE EARLY DARK ENERGY WITH CURRENT OBSERVATIONSALAM, Ujjaini.The Astrophysical journal. 2010, Vol 714, Num 2, pp 1460-1469, issn 0004-637X, 10 p., 1Article

Characterization of a ΔΣ-based CMOS monolithic detectorHANOLD, Brandon J; FIGER, Donald F; ASHE, Brian et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 77420A.1-77420A.17Conference Paper

Characterization of multicolor type-II InAs/GaSb strained-layer superlattice photodetectors for use in astronomical observationWONG, Andre F; NELSON, Matthew J; PLIS, Elena A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 774223.1-774223.10Conference Paper

Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 1010 protons/cm2BAPTISTA, Brian J; MUFSON, Stuart L.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7742, issn 0277-786X, isbn 0-8194-8232-3 978-0-8194-8232-7, 774225.1-774225.11Conference Paper

A versatile wide dynamic range pixel with an improved low light sensitivityCHENG, Hsiu-Yu; COLLINS, Steve.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7113, issn 0277-786X, isbn 978-0-8194-7345-5 0-8194-7345-6, 1Vol, 71130F.1-71130F.9Conference Paper

Characterization of prototype LSST CCDsO'CONNOR, P; FRANK, J; GEARY, J. C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7021, pp 702106.1-702106.12, issn 0277-786X, isbn 0-8194-7231-X 978-0-8194-7231-1Conference Paper

Field effect on the variable range hopping in amorphous materialsEMELIANOVA, E. V; ARKHIPOV, V. I; ADRIAENSSENS, G. J et al.International symposium on electrets. 1999, pp 59-62, isbn 0-7803-5025-1Conference Paper

Punchthrough Enhanced Phototransistor Fabricated in Standard CMOS ProcessXIN LIU; SHUXU GUO; CHEN ZOU et al.IEEE electron device letters. 2009, Vol 30, Num 3, pp 272-274, issn 0741-3106, 3 p.Article

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