Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Couche épitaxique")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 11182

  • Page / 448
Export

Selection :

  • and

Thermal mismatch biased rhombohedral structure of strained epitaxial CaF2 films on Si(111)TEMPEL, A; MÄDER, M; ZEHE, A et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 2, pp 493-501, issn 0031-8965Article

NUCLEATION AND GROWTH OF STACKING FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATIONHSIEH CM; MAHER DM.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1302-1306; BIBL. 17 REF.Serial Issue

MEASUREMENT OF STRAIN AND LATTICE PARAMETER IN EPITAXIC LAYERS.HART M; LLOYD KH.1975; J. APPL. CRYSTALLOGR.; DENM.; DA. 1975; VOL. 8; NO 1; PP. 42-44; BIBL. 4 REF.Article

ON THE TECHNIQUE AND EVALUATION OF ANGLE-BEVELING SILICON EPITAXIAL LAYERS.SEVERIN PJ; BULLE H; POODT G et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 440-443; BIBL. 12 REF.Article

SEM OBSERVATION AND CONTRAST MECHANISM OF STACKING FAULTS IN AN EPITAXIAL SILICON LAYER.KATO T; KOYAMA H; MATSUKAWA T et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3732-3737; BIBL. 13 REF.Article

ETUDE DES DEFAUTS DU SI OXYDE D'UNE COUCHE D'OXYDE EN COURS DE CROISSANCEPROKHOROV VI; SOROKIN LM.1973; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1973; VOL. 9; NO 1; PP. 32-34; H.T. 1; BIBL. 15 REF.Serial Issue

PROCESSUS DE LA CROISSANCE DES CRISTAUX ET DES FILMS PAR LA METHODE DE L'EPITAXIE COMBINEE GAZ-LIQUIDEKRAVCHENKO VS; BUDZHAN YA M; KOSYAKOV VI et al.1975; IZVEST. SIBIR. OTDEL. AKAD. NAUK S.S.S.R., KHIM. NAUK; S.S.S.R.; DA. 1975; NO 2; PP. 78-95; BIBL. 1 P. 1/2Article

TRANSPORT D'IMPURETES A CARACTERE DONNEUR OU ACCEPTEUR DES SOURCES DE SILICIUM QUI SE SUBLIMENT AUX COUCHES EPITAXIQUESPOSTNIKOV VV; KUZNETSOV VP.1975; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1975; VOL. 20; NO 1; PP. 127-130; BIBL. 13 REF.Article

TRIMETHYLSTIBINE AS A SOURCE OF SB FOR DOPING EPITAXIAL SI LAYERS.MANASEVIT HM; SIMPSON WI; ERDMANN FM et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 7; PP. 967-968; BIBL. 4 REF.Article

An integrated silicon colour sensor using selective epitaxial growthBARTEK, M; GENNISSEN, P. T. J; SARRO, P et al.Sensors and actuators. A, Physical. 1994, Vol 41, Num 1-3, pp 123-128, issn 0924-4247Conference Paper

Epitaxial zirconia films on (1120) planes of sapphireRUIN, P; DAUGER, A; VILLECHAIZE, P et al.Key engineering materials. 1997, pp 49-52, issn 1013-9826, isbn 0-87849-761-7, 3VolConference Paper

Traitements de surface d'InP et contribution à l'optimisation des interfaces de reprise d'épitaxie InP(p)/InP(p) réalisées par GSMBE = InP surface treatments and optimization of InP(p)/InP(p) regrown interfaces obtained using GSMBEGallet, Didier; Hollinger, Guy.1992, 215 p.Thesis

Effets non réciproques dans des structures hétérogènes de semiconducteursBELYANTSEV, A. M; KOZLOV, V. A; MAZOV, L. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 655-660, issn 0015-3222Article

METHODES D'INTERFEROMETRIE INFRAROUGE POUR LA MESURE DES PARAMETRES DES STRUCTURES EPITAXIALES AU SILICIUM AVEC UNE COUCHE CACHEEBANKOVSKIJ YU V; VOLKOVA LV; KOKIN AA et al.1981; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1981; VOL. 10; NO 2; PP. 140-145; BIBL. 3 REF.Article

EMPLOI DE L'ABSORPTION A DEUX PHOTONS POUR ETUDIER LES HETEROSTRUCTURES EPITAXIQUES A PLUSIEURS COUCHESDVORNIKOV DP; KONNIKOV SG; PERSHIN VV et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 12; PP. 2355-2362; BIBL. 17 REF.Article

COMPOSITE CHALCOGENIDE-HALIDE SUBSTRATES FOR COMPARATIVE STUDIES OF THIN FILM GROWTH PHENOMENA.MARINKOVIC V; GSPAN P.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 33; NO 2; PP. L9-L11; BIBL. 6 REF.Article

ETUDE RADIOGRAPHIQUE DE LA STRUCTURE DES COUCHES EPITAXIALES PBSPALATNIK LS; FUKS M YA; ALAVERDOVA OG et al.1976; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1976; VOL. 19; NO 3; PP. 54-58; BIBL. 9 REF.Article

THE TRANSIENT LAYER IN MAGNETIC GARNET FILMS GROWN BY LIQUID PHASE EPITAXY.DAVIES JE; GIESS EA; KUPTSIS JD et al.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 1; PP. 65-69; BIBL. 8 REF.Article

THERMOCHEMICAL ANALYSES AND OPTIMUM CONDITIONS FOR VAPOR EPITAXY OF GAAS1-XPX(0.7<X<0.9).TAO YUAN WU.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 6; PP. 778-780; BIBL. 16 REF.Article

VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING HYDROGEN CHLORIDE GAS.RAJARAM BHAT; JAYANT BALIGA B; GHANDHI SK et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 10; PP. 1378-1382; BIBL. 9 REF.Article

CROISSANCE EPITAXIALE DU DIAMANT A PARTIR DE CH4 A PRESSION ATMOSPHERIQUETESNER PA; GORODETSKIJ AE; DENISEVICH EV et al.1975; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1975; VOL. 222; NO 6; PP. 1384-1386; H.T. 1; BIBL. 9 REF.Article

DISLOCATIONS D'ACCOMODATION ET DEFORMATIONS ELASTIQUES DANS DES BICRISTAUX D'OR-ARGENTPOSTNIKOV VS; IEVIEV VM; SOLOV'EV KS et al.1975; FIZ. METALLOV METALLOVED.; S.S.S.R.; DA. 1975; VOL. 39; NO 1; PP. 196-201; BIBL. 5 REF.Article

OBSERVATION PAR SPECTROMETRIE AUGER ET DIFFRACTION D'ELECTRONS LENTS DU MECANISME DE CROISSANCE DE FE SUR LA SURFACE (001) DE MGOKANATI T; MAMEDA JI; KAGOTANI T et al.1975; J. VACUUM SOC. JAP.; JAP.; DA. 1975; VOL. 18; NO 2; PP. 45-53; ABS. ANGL.; BIBL. 18 REF.Article

COMPUTED EPITAXIAL MONOLAYER STRUCTURES. II. TWO-DIMENSIONAL MODEL: EQUILIBRIUM MONOLAYER STRUCTURES IN THE CASE OF RECTANGULAR INTERFACIAL SYMMETRY.SNYMAN JA; VAN DER MERWE JH.1974; SURF. SCI.; NETHERL.; DA. 1974; VOL. 45; NO 2; PP. 619-639; BIBL. 6 REF.Article

LOCALISED TO NON-LOCALISED TRANSITION IN A KRYPTON MONOLAYER ADSORBED ON GRAPHITE.PRICE GL; VENABLES JA.1974; PHYS. LETTERS, A; NETHERL.; DA. 1974; VOL. 47; NO 1; PP. 19-20; BIBL. 5 REF.Article

  • Page / 448