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GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layersASBECK, P. M; MILLER, D. L; ANDERSON, R. J et al.IEEE electron device letters. 1984, Vol 5, Num 8, pp 310-312, issn 0741-3106Article

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Performance of co-fired buried resistors in A6S tapeMOROZ, Michail.SPIE proceedings series. 2003, pp 161-166, isbn 0-8194-5189-4, 6 p.Conference Paper